Datasheet BT258X-800R, BT258X-600R, BT258X-500R, BT258S-800R, BT258S-600R Datasheet (Philips)

...
Page 1
Philips Semiconductors Product specification
Thyristors BT258 series logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT258- 500R 600R 800R switching and phase control V
, Repetitive peak off-state 500 600 800 V
applications. These devices are V
voltages
intended to be interfaced directly to I
T(AV)
Average on-state current 5 5 5 A
microcontrollers, logic integrated I
T(RMS)
RMS on-state current 8 8 8 A
circuits and other low power gate I
TSM
Non-repetitive peak on-state 75 75 75 A
trigger circuits. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode 2 anode 3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
, V
Repetitive peak off-state - 50016001800 V voltages
I
T(AV)
Average on-state current half sine wave; Tmb 111 ˚C - 5 A
I
T(RMS)
RMS on-state current all conduction angles - 8 A
I
TSM
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to on-state current surge
t = 10 ms - 75 A t = 8.3 ms - 82 A
I2tI
2
t for fusing t = 10 ms - 28 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125
2
˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
October 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Thyristors BT258 series logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance - - 2.0 K/W junction to mounting base
R
th j-a
Thermal resistance in free air - 60 - K/W junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A - 50 200 µA
I
L
Latching current VD = 12 V; IGT = 0.1 A - 0.4 10 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 0.3 6 mA
V
T
On-state voltage IT = 16 A - 1.3 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = V
DRM(max)
; IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, I
R
Off-state leakage current VD = V
DRM(max)
; VR = V
RRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; 50 100 - V/µs
off-state voltage exponential waveform; RGK = 100
t
gt
Gate controlled turn-on ITM = 10 A; VD = V
DRM(max)
; IG = 5 mA; - 2 - µs
time dIG/dt = 0.2 A/µs
t
q
Circuit commutated VD = 67% V
DRM(max)
; Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 k
October 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Thyristors BT258 series logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature Tmb.
Fig.4. Maximum permissible non-repetitive peak on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0123456
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
BT150
IT(AV) / A
Ptot / W
Tmb(max) / C
125
123
121
119
117
115
113
111
109
conduction angle
form factor
degrees
30 60 90 120 180
4
2.8
2.2
1.9
1.57
a
BT258
1 10 100 1000
0
40
Number of half cycles at 50Hz
ITSM / A
10
20
30
50
60
70
80
T
I
TSM
time
I
T
Tj initial = 25 C max
10
100
1000
BT150
10us 100us 1ms
10ms
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
4
8
12
16
20
24
BT150
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
1
2
3
4
5
6
7
8
9
BT258
Tmb / C
IT(RMS) / A
111 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
October 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Thyristors BT258 series logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT150
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
5
10
15
20
25
30
typ
BT150+
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 0.99 V
Rs = 0.0325 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT150
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
0.01
0.1
1
10
BT150
tp / s
Zth j-mb (K/W)
t
p
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT150
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
October 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Thyristors BT258 series logic level
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3 max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
123
2,4
0,6
4,5 max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Thyristors BT258 series logic level
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1997 6 Rev 1.200
Loading...