Datasheet BT169GW, BT169EW, BT169BW Datasheet (Philips)

Philips Semiconductors Product specification

Thyristor BT169W Series
logic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated, sensitive gate thyristor in SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
a plastic envelope, suitable for
surface mounting, intended for use in BT169 BW DW EW GW
generalpurposeswitchingandphase V
control applications. This device is V
intended to be interfaced directly to I
microcontrollers, logic integrated current
circuits and other low power gate I
trigger circuits. I

PINNING - SOT223 PIN CONFIGURATION SYMBOL

, Repetitive peak 200 400 500 600 V

DRM

RRM

T(AV)

T(RMS)
TSM

off-state voltages
Average on-state 0.5 0.5 0.5 0.5 A

RMS on-state current 0.8 0.8 0.8 0.8 A
Non-repetitive peak 8888A

on-state current

PIN DESCRIPTION

1 cathode

4

ak

2 anode
3 gate

tab anode

1

23

g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

I

T(AV)

DRM

, V

Repetitive peak off-state - 200140015001600

RRM

voltages
Average on-state current half sine wave; - 0.63 A

Tsp ≤ 112 ˚C

BDEG

I

T(RMS)

I

TSM

RMS on-state current all conduction angles - 1 A
Non-repetitive peak half sine wave;
on-state current Tj = 25 ˚C prior to surge

t = 10 ms - 8 A

I2tI

2

t for fusing t = 10 ms - 0.32 A2s

t = 8.3 ms - 9 A

dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs

on-state current after dIG/dt = 100 mA/µs

triggering
I
V
V
P
P
T
T

GM

GM
RGM
GM

G(AV)
stg
j

Peak gate current - 1 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 2 W
Average gate power over any 20 ms period - 0.1 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

1

V

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 2001 1 Rev 1.400

Philips Semiconductors Product specification

Thyristor BT169W Series
logic level

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-sp

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

ID, I

R

Thermal resistance - - 15 K/W
junction to solder point
Thermal resistance pcb mounted, minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W

Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26mA
Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25mA
On-state voltage IT = 2 A - 1.35 1.5 V
Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V

VD = V
gate open circuit

Off-state leakage current VD = V

; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V

DRM(max)

DRM(max)

; VR = V

; Tj = 125 ˚C; - 0.05 0.1 mA

RRM(max)

RGK = 1 kΩ

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM =67% V

off-state voltage exponential waveform; RGK = 1k Ω

t

gt

Gate controlled turn-on ITM = 2 A; VD = V
time dIG/dt = 0.1 A/µs

t

q

Circuit commutated VD = 67% V
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;

dVD/dt = 2 V/µs; RGK = 1 kΩ

DRM(max)

; Tj = 125 ˚C; 500 800 - V/µs

DRM(max)

; IG = 10 mA; - 2 - µs

DRM(max)

; Tj = 125 ˚C; - 100 - µs

September 2001 2 Rev 1.400

Philips Semiconductors Product specification

Thyristor BT169W Series
logic level

Ptot / W

1

conduction

form

angle

factor

degrees

0.8

0.6

0.4

0.2

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

30
60
90
120
180

a

4

2.8

2.2

1.9

1.57

2.2

2.8

4

IF(AV) / A

Fig.1. Maximum on-state dissipation, P

average on-state current, I

factor = I

ITSM / A

1000

100

T(RMS)

T(AV)

/ I

T(AV)

Tsp(max) / C

a = 1.57

1.9

, where a = form

tot

.

110

113

116

119

122

125

, versus

ITSM / A

10

I

I

T

8

Tj initial = 25 C max

6

4

2

0

1 10 100 1000

Number of half cycles at 50Hz

TSM

time

T

Fig.4. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

IT(RMS) / A

2

1.5

1

, versus number of cycles, for

TSM

10

I

1

10us 100us 1ms

I

T

TSM

time

T

Tj initial = 25 C max

T / s

10ms

Fig.2. Maximum permissible non-repetitive peak

on-state current I

, versus pulse width tp, for

TSM

sinusoidal currents, tp ≤ 10ms.

IT(RMS) / A

1.2

1

0.8

0.6

0.4

0.2

0

-50 0 50 100 150

Fig.3. Maximum permissible rms current I

versus solder point temperature Tsp.

BT134W

Tsp / C

112 C

T(RMS)

,

0.5

0

0.01 0.1 1 10
surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tsp ≤ 112˚C.

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150
Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

September 2001 3 Rev 1.400

Philips Semiconductors Product specification

Thyristor BT169W Series
logic level

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)

IL(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature Tj, RGK = 1 kΩ.

IT / A

5

Tj = 125 C

Tj = 25 C

4

Vo = 1.0 V
Rs = 0.27 Ohms

3

2

1

0

0 0.5 1 1.5 2 2.5

typ max

VT / V

Fig.10. Typical and maximum on-state characteristic.

Zth j-sp (K/W)

100

10

1

0.1

0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

BT169W

P

D

tp / s

pulse width tp.

t

p

t

, versus

th j-sp

IH(Tj)

IH(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature Tj, RGK = 1 kΩ.

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt (V/us)

10000

RGK = 1 kohms

1000

100

10

0

50

Tj / C

100

dVD/dt versus junction temperature Tj.

150

September 2001 4 Rev 1.400

Philips Semiconductors Product specification

Thyristor BT169W Series
logic level

MOUNTING INSTRUCTIONS

Dimensions in mm.

3.8

min

1.5
min

MECHANICAL DATA

Dimensions in mm
Net Mass: 0.11 g

1.5

min

1.5

min
(3x)

2.3

4.6

6.3

Fig.13. soldering pattern for surface mounting SOT223.

6.7

6.3

0.32

0.24

3.1

2.9

4

0.10

0.02

B

A

3.7

3.3

7.3

6.7

AM0.2

16

max

1.8

max

10
max

13

23

0.80

0.60

4.6

0.1
(4x)

M

B

1.05

0.85

1

2.3

Fig.14. SOT223 surface mounting package.

Notes

1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.

2. Epoxy meets UL94 V0 at 1/8".

September 2001 5 Rev 1.400

Philips Semiconductors Product specification

Thyristor BT169W Series
logic level

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

2

STATUS

3

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

September 2001 6 Rev 1.400