Page 1
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT169 B D E G
switching and phase control V
DRM
, Repetitive peak 200 400 500 600 V
applications. These devices are V
RRM
off-state voltages
intended to be interfaced directly to I
T(AV)
Average on-state 0.5 0.5 0.5 0.5 A
microcontrollers, logic integrated current
circuits and other low power gate I
T(RMS)
RMS on-state current 0.8 0.8 0.8 0.8 A
trigger circuits. I
TSM
Non-repetitive peak 8888A
on-state current
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 anode
2 gate
3 cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BDEG
V
DRM
, V
RRM
Repetitive peak off-state - 200140015001600
1
V
voltages
I
T(AV)
Average on-state current half sine wave; - 0.5 A
T
lead
≤ 83 ˚C
I
T(RMS)
RMS on-state current all conduction angles - 0.8 A
I
TSM
Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
Tj = 25 ˚C prior to surge
I2tI
2
t for fusing t = 10 ms - 0.32 A2s
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
I
GM
Peak gate current - 1 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 2 W
P
G(AV)
Average gate power over any 20 ms period - 0.1 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
321
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
Thermal resistance - - 60 K/W
junction to lead
R
th j-a
Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
I
L
Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26mA
I
H
Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25mA
V
T
On-state voltage IT = 1 A - 1.2 1.35 V
V
GT
Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = V
DRM(max)
; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
gate open circuit
ID, I
R
Off-state leakage current VD = V
DRM(max)
; VR = V
RRM(max)
; Tj = 125 ˚C; - 0.05 0.1 mA
RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; - 25 - V/µs
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
Gate controlled turn-on ITM = 2 A; VD = V
DRM(max)
; IG = 10 mA; - 2 - µs
time dIG/dt = 0.1 A/µs
t
q
Circuit commutated VD = 67% V
DRM(max)
; Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
September 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus lead temperature, T
lead
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead
≤ 83˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
a = 1.57
1.9
2.2
2.8
4
BT169
IF(AV) / A
Ptot / W
Tc(max) / C
125
119
113
107
101
95
89
83
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
77
a
1 10 100 1000
0
2
4
6
8
10
BT169
Number of half cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
1
10
100
1000
BT169
10us 100us 1ms
10ms
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
0.01 0.1 1 10
0
0.5
1
1.5
2
BT169
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
0.2
0.4
0.6
0.8
1
BT169
Tlead / C
IT(RMS) / A
83 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
September 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-lead
, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT169
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5
0
1
2
3
4
5
typ
BT169
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.067 V
Rs = 0.187 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT169
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
0.01
0.1
1
10
Zth j-lead (K/W)
100
t
p
P
t
D
BT169
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT169
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 1 kohms
September 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
Fig.13. TO92; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
0.48
0.40
0.40
min
12.7 min
5.2 max
4.8 max
4.2 max
2.5 max
1.6
2.54
0.66
0.56
123
September 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.200
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