Page 1
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX MAX MAX MAX UNIT
inaplasticenvelope,intendedforuse ....
in general purpose switching and BT169
phase control applications. These V
devicesare intendedtobe interfaced V
directly to microcontrollers, logic I
integrated circuits and other low current 0.5 0.5 0.5 0.5
power gate trigger circuits. I
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
, Repetitive peak BDEGV
DRM
RRM
T(AV)
T(RMS)
I
TSM
off-state voltages 200 400 500 600
Average on-state A
RMS on-state current A
Non-repetitive peak 0.8 0.8 0.8 0.8 A
on-state current 8888
1 anode
ak
2 gate
3 cathode
321
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 200140015001600
RRM
voltages
Average on-state current half sine wave; - 0.5 A
T
≤ 83 ˚C
RMS on-state current all conduction angles - 0.8 A
lead
Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
BDEG
I2tI
2
t for fusing t = 10 ms - 0.32 A2s
Tj = 25 ˚C prior to surge
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 1 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 2 W
Average gate power over any 20 ms period - 0.1 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 2001 1 Rev 1.500
Page 2
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 60 K/W
junction to lead
Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26mA
Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25mA
On-state voltage IT = 1 A - 1.2 1.35 V
Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = V
; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
DRM(max)
gate open circuit
Off-state leakage current VD = V
RGK = 1 kΩ
DRM(max)
; VR = V
; Tj = 125 ˚C; - 0.05 0.1 mA
RRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
t
q
Gate controlled turn-on ITM = 2 A; VD = V
time dIG/dt = 0.1 A/µs
Circuit commutated VD = 67% V
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
DRM(max)
; Tj = 125 ˚C; 500 800 - V/µs
DRM(max)
; IG = 10 mA; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 100 - µs
September 2001 2 Rev 1.500
Page 3
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
a = 1.57
T(AV)
/ I
Tc(max) / C
, where
.
T(AV)
tot
Ptot / W
0.8
conduction
form
angle
degrees
30
60
90
120
180
factor
a
4
2.8
2.2
1.9
1.57
1.9
2.2
2.8
4
IF(AV) / A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Fig.1. Maximum on-state dissipation, P
average on-state current, I
1000
100
a = form factor = I
ITSM / A
T(RMS)
77
83
89
95
101
107
113
119
125
, versus
ITSM / A
10
I
I
T
8
Tj initial = 25 C max
6
4
2
0
1 10 100 1000
Number of half cycles at 50Hz
TSM
time
T
Fig.4. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
2
1.5
1
, versus number of cycles, for
TSM
10
I
1
10us 100us 1ms
I
T
TSM
time
T
Tj initial = 25 C max
T / s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width tp, for
TSM
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
Tlead / C
Fig.3. Maximum permissible rms current I
versus lead temperature, T
83 C
lead
,
T(RMS)
.
0.5
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
VGT(Tj)
Tj / C
≤ 83˚C.
lead
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 2001 3 Rev 1.500
Page 4
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
IT / A
5
Tj = 125 C
Tj = 25 C
4
Vo = 1.067 V
Rs = 0.187 ohms
3
2
1
0
0 0.5 1 1.5 2 2.5
typ
VT / V
max
Fig.10. Typical and maximum on-state characteristic.
Zth j-lead (K/W)
100
10
1
t
P
p
tp / s
D
t
, versus
th j-lead
0.1
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
pulse width tp.
IH(Tj)
IH(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt (V/us)
10000
RGK = 1 kohms
1000
100
10
0
50
Tj / C
100
dVD/dt versus junction temperature Tj.
150
September 2001 4 Rev 1.500
Page 5
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
MECHANICAL DATA
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E
d
1
D
2
A L
b
e
1
e
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
b
A
5.2
0.48
5.0
0.40
SOT54 TO-92 SC-43
Notes
1. Epoxy meets UL94 V0 at 1/8".
3
b
1
0 2.5 5 mm
c
D
d
1.7
1.4
REFERENCES
E
4.2
3.6
b
1
0.45
0.40
4.8
4.4
0.66
0.56
IEC JEDEC EIAJ
2.54
scale
e
1.27
L
1
(1)
L
e
1
14.5
12.7
L
1
2.5
EUROPEAN
PROJECTION
Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g
ISSUE DATE
97-02-28
September 2001 5 Rev 1.500
Page 6
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS
Objective data Development This data sheet contains data from the objective specification for
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
2
STATUS
3
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
September 2001 6 Rev 1.500
Page 7
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www.datasheetcatalog.com
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