Page 1
Philips Semiconductors Product specification
Thyristors BT151F series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT
pack, plastic envelope, intended for
use in applications requiring high BT151F- 500 650 800
bidirectional blocking voltage V
DRM
, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling V
RRM
voltages
performance. Typical applications I
T(AV)
Average on-state current 5.7 5.7 5.7 A
include motor control, industrial and I
T(RMS)
RMS on-state current 9 9 9 A
domestic lighting, heating and static I
TSM
Non-repetitive peak on-state 100 100 100 A
switching. current
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -650 -800
V
DRM
, V
RRM
Repetitive peak off-state - 50016501800 V
voltages
I
T(AV)
Average on-state current half sine wave; Ths ≤ 87 ˚C - 5.7 A
I
T(RMS)
RMS on-state current all conduction angles - 9 A
I
TSM
Non-repetitive peak half sine wave; Tj = 125 ˚C prior
on-state current to surge; with reapplied V
DRM(max)
t = 10 ms - 100 A
t = 8.3 ms - 110 A
I2tI
2
t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 1996 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Thyristors BT151F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance with heatsink compound - - 4.5 K/W
junction to heatsink without heatsink compound - - 6.5 K/W
R
th j-a
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA
V
T
On-state voltage IT = 23 A - 1.4 1.75 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = V
DRM(max)
; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, I
R
Off-state leakage current VD = V
DRM(max)
; VR = V
RRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C;
off-state voltage exponential waveform
Gate open circuit 50 130 - V/µs
RGK = 100 Ω 200 1000 - V/µs
t
gt
Gate controlled turn-on ITM = 40 A; VD = V
DRM(max)
; IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
t
q
Circuit commutated VD = 67% V
DRM(max)
; Tj = 125 ˚C; - 70 - µs
turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
February 1996 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Thyristors BT151F series
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature Ths.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 87˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0123456
0
2
4
6
8
10
a = 1.57
1.9
2.2
2.8
4
BT151F
IF(AV) / A
Ptot / W
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
125
116
107
98
89
80
Ths(max) / C
a
1 10 100 1000
0
20
40
60
80
100
120
BT151
Number of half cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 125 C max
T
10
100
1000
BT151
10us 100us 1ms
10ms
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 125 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
5
10
15
20
25
BT151
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
2
4
6
8
10
BT151F
Ths / C
IT(RMS) / A
87 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
February 1996 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Thyristors BT151F series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT151
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
5
10
15
20
25
30
BT151
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
typ max
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT151
tp / s
Zth j-hs (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
t
p
P
t
D
without heatsink compound
with heatsink compound
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT151
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
February 1996 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Thyristors BT151F series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
123
M
0.4
top view
3.5 max
not tinned
4.4
February 1996 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Thyristors BT151F series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996 6 Rev 1.100
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