Datasheet BT150-800R, BT150-600R, BT150-500R Datasheet (Philips)

Philips Semiconductors Product specification

Thyristors BT150 series
logic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT150- 500R 600R 800R
switching and phase control V
applications. These devices are V
intended to be interfaced directly to I
microcontrollers, logic integrated I
circuits and other low power gate I
trigger circuits. current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

, Repetitive peak off-state 500 600 800 V

DRM

RRM

T(AV)
T(RMS)
TSM

voltages
Average on-state current 2.5 2.5 2.5 A
RMS on-state current 4 4 4 A
Non-repetitive peak on-state 35 35 35 A

PIN DESCRIPTION

1 cathode

tab

ak

2 anode
3 gate

tab anode

123

g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500R -600R -800R

V

DRM

I

T(AV)

I

T(RMS)

I

TSM

, V

Repetitive peak off-state - 5001600

RRM

voltages
Average on-state current half sine wave; Tmb ≤ 113 ˚C - 2.5 A

RMS on-state current all conduction angles - 4 A
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge

t = 10 ms - 35 A

I2tI

2

t for fusing t = 10 ms - 6.1 A2s

t = 8.3 ms - 38 A

dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs

on-state current after dIG/dt = 50 mA/µs

triggering
I
V
V
P
P
T
T

GM

GM
RGM
GM

G(AV)
stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125
temperature

1

2

800 V

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 1997 1 Rev 1.300

Philips Semiconductors Product specification

Thyristors BT150 series
logic level

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

ID, I

R

Thermal resistance - - 2.5 K/W
junction to mounting base
Thermal resistance in free air - 60 - K/W
junction to ambient

Gate trigger current VD = 12 V; IT = 0.1 A - 15 200 µA
Latching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA
Holding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA
On-state voltage IT = 5 A - 1.23 1.8 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V

Off-state leakage current VD = V

VD = V

; IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V

DRM(max)
DRM(max)

; VR = V

; Tj = 125 ˚C - 0.1 0.5 mA

RRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage exponential waveform; RGK = 100 Ω

t

gt

t

q

Gate controlled turn-on ITM = 10 A; VD = V
time dIG/dt = 0.2 A/µs
Circuit commutated VD = 67% V
turn-off time VR = 10 V; dITM/dt = 10 A/µs;

dVD/dt = 2 V/µs; RGK = 1 kΩ

DRM(max)

; Tj = 125 ˚C; - 50 - V/µs

DRM(max)

; IG = 5 mA; - 2 - µs

DRM(max)

; Tj = 125 ˚C; ITM = 8 A; - 100 - µs

October 1997 2 Rev 1.300

Philips Semiconductors Product specification

Thyristors BT150 series
logic level

1.9

T(AV)

/ I

Tmb(max) / C

a = 1.57

, versus

tot

, where

.

T(AV)

Ptot / W

6

conduction

form

angle

factor

degrees

5

4

3

2

1

0

0 0.5 1 1.5 2 2.5 3

a

30

4

60

2.8

90

2.2

120

1.9

180

1.57

4

BT148

2.2

2.8

IF(AV) / A

Fig.1. Maximum on-state dissipation, P

average on-state current, I

1000

100

a = form factor = I

ITSM / A

dI /dt limit

T

T(RMS)

BT148

110

112.5

115

117.5

120

122.5

125

ITSM / A

40

I

TSM

I

T

30

20

10

0

1

10 100

Number of half cycles at 50Hz

time

T

Tj initial = 25 C max

1000

Fig.4. Maximum permissible non-repetitive peak
on-state current I

sinusoidal currents, f = 50 Hz.

IT(RMS) / A

12

10

8

6

, versus number of cycles, for

TSM

BT150

I

I

10

10us 100us 1ms

TSM

T

time

T

Tj initial = 25 C max

T / s

10ms

Fig.2. Maximum permissible non-repetitive peak

on-state current I

, versus pulse width tp, for

TSM

sinusoidal currents, tp ≤ 10ms.

IT(RMS) / A

5

4

3

2

1

0

-50 0 50 100 150

Fig.3. Maximum permissible rms current I

versus mounting base temperature Tmb.

BT148

Tmb / C

113 C

T(RMS)

,

4

2

0

0.01 0.1 1 10
surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 113˚C.

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150

BT151

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

October 1997 3 Rev 1.300

Philips Semiconductors Product specification

Thyristors BT150 series
logic level

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

BT148

Tj / C

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

2.5

1.5

IL(25 C)

3

2

1

BT145

IT / A

12

Tj = 125 C

Tj = 25 C

10

Vo = 1.26 V

Rs = 0.099 ohms

8

6

4

2

0

0 0.5 1 1.5 2 2.5 3

BT148

VT / V

typ

max

Fig.10. Typical and maximum on-state characteristic.

.

j

Zth j-mb (K/W)

10

1

0.1

BT148

t

P

p

D

0.5

0

-50 0 50 100 150
Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

IH(Tj)

IH(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

BT145

Tj / C

.

j

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

.

j

t

0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

Fig.11. Transient thermal impedance Z

pulse width tp.

dVD/dt (V/us)

1000

100

10

1

0 50 100 150

Tj / C

RGK = 100 ohms

th j-mb

, versus

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

October 1997 4 Rev 1.300

Philips Semiconductors Product specification

Thyristors BT150 series
logic level

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1997 5 Rev 1.300

Philips Semiconductors Product specification

Thyristors BT150 series
logic level

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1997 6 Rev 1.300