Page 1
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT149 B D E G
switching and phase control V
applications. These devices are V
intended to be interfaced directly to I
microcontrollers, logic integrated current
circuits and other low power gate I
trigger circuits. I
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
, Repetitive peak 200 400 500 600 V
DRM
RRM
T(AV)
T(RMS)
TSM
off-state voltages
Average on-state 0.5 0.5 0.5 0.5 A
RMS on-state current 0.8 0.8 0.8 0.8 A
Non-repetitive peak 8888A
on-state current
1 cathode
ak
2 gate
3 anode
321
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 200140015001600
RRM
voltages
Average on-state current half sine wave; - 0.5 A
T
≤ 83 ˚C
RMS on-state current all conduction angles - 0.8 A
lead
Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
BDEG
I2tI
2
t for fusing t = 10 ms - 0.32 A2s
Tj = 25 ˚C prior to surge
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 1 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 2 W
Average gate power over any 20 ms period - 0.1 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 60 K/W
junction to lead
Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26mA
Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25mA
On-state voltage IT = 1 A - 1.2 1.35 V
Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = V
; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
DRM(max)
gate open circuit
Off-state leakage current VD = V
RGK = 1 kΩ
DRM(max)
; VR = V
; Tj = 125 ˚C; - 0.05 0.1 mA
RRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
t
q
Gate controlled turn-on ITM = 2 A; VD = V
time dIG/dt = 0.1 A/µs
Circuit commutated VD = 67% V
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
DRM(max)
; Tj = 125 ˚C; - 25 - V/µs
DRM(max)
; IG = 10 mA; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 100 - µs
September 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
a = 1.57
T(AV)
/ I
Tc(max) / C
, where
.
T(AV)
tot
Ptot / W
0.8
conduction
form
angle
degrees
30
60
90
120
180
factor
a
4
2.8
2.2
1.9
1.57
4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
BT169
1.9
2.2
2.8
IF(AV) / A
Fig.1. Maximum on-state dissipation, P
average on-state current, I
1000
100
a = form factor = I
ITSM / A
T(RMS)
BT169
77
83
89
95
101
107
113
119
125
, versus
ITSM / A
10
8
6
4
2
0
1 10 100 1000
Number of half cycles at 50Hz
BT169
I
I
T
Tj initial = 25 C max
TSM
time
T
Fig.4. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
2
1.5
1
, versus number of cycles, for
TSM
BT169
10
I
1
10us 100us 1ms
I
T
TSM
time
T
Tj initial = 25 C max
T / s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width tp, for
TSM
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
Fig.3. Maximum permissible rms current I
versus lead temperature, T
BT169
Tlead / C
83 C
lead
,
T(RMS)
.
0.5
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
VGT(Tj)
BT151
Tj / C
≤ 83˚C.
lead
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT169
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT169
Tj / C
.
j
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
IT / A
5
Tj = 125 C
Tj = 25 C
4
Vo = 1.067 V
Rs = 0.187 ohms
3
2
1
0
0 0.5 1 1.5 2 2.5
BT169
VT / V
typ
max
Fig.10. Typical and maximum on-state characteristic.
Zth j-lead (K/W)
100
10
1
0.1
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
pulse width tp.
BT169
tp / s
t
P
p
D
t
, versus
th j-lead
IH(Tj)
IH(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT169
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt (V/us)
1000
100
10
1
0 50 100 150
Tj / C
RGK = 1 kohms
dVD/dt versus junction temperature Tj.
September 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
MECHANICAL DATA
Dimensions in mm
2.54
Net Mass: 0.2 g
0.66
0.56
1.6
4.8 max
123
5.2 max
12.7 min
0.48
0.40
4.2 max
2.5 max
0.40
min
Fig.13. TO92; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
September 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.200
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