Page 1
Philips Semiconductors Product specification
Triacs BT139B series E
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsinaplastic envelopesuitablefor
surface mounting, intended for use in BT139B- 500E 600E 800E
general purpose bidirectional V
DRM
switching and phase control voltages
applications, where high sensitivity is I
required in all four quadrants. I
T(RMS)
TSM
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 16 16 16 A
Non-repetitive peak on-state 140 140 140 A
current
PIN DESCRIPTION
mb
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 5001600
voltages
RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 16 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 140 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
t = 16.7 ms - 150 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
-500 -600 -800
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
800 V
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997 1 Rev 1.000
Page 2
Philips Semiconductors Product specification
Triacs BT139B series E
sensitive gate
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 3.2 30 mA
T2+ G- - 16 40 mA
T2- G- - 4.0 30 mA
T2- G+ - 5.5 40 mA
Holding current VD = 12 V; IGT = 0.1 A - 4.0 30 mA
On-state voltage IT = 20 A - 1.2 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
t
gt
Gate controlled turn-on ITM = 20 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; - 50 - V/µs
DRM(max)
; IG = 0.1 A; - 2 - µs
DRM(max)
March 1997 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
Triacs BT139B series E
sensitive gate
Ptot / W
25
20
15
10
5
0
0 5 10 15 20
BT139
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
T2- G+ quadrant
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
BT139
dI /dt limit
T
I
T
T / s
Tmb(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
95
101
107
113
119
125
IT(RMS) / A
20
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus mounting base temperature Tmb.
IT(RMS) / A
50
40
30
20
10
0
0.01 0.1 1 10
BT139
Tmb / C
BT139
surge duration / s
99 C
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
150
100
50
0
1 10 100 1000
BT139
I
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
March 1997 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Triacs BT139B series E
sensitive gate
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT139E
Tj / C
T2+ G+
T2+ GT2- G-
T2- G+
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
2.5
1.5
0.5
IL(25 C)
3
2
1
TRIAC
IT / A
50
Tj = 125 C
Tj = 25 C
40
Vo = 1.195 V
Rs = 0.018 Ohms
30
20
10
0
0 0.5 1 1.5 2 2.5 3
BT139
typ max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-mb (K/W)
10
1
0.1
0.01
BT139
unidirectional
bidirectional
t
P
p
D
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
dVD/dt (V/us)
1000
100
10
1
0 50 100 150
tp / s
pulse width tp.
Tj / C
th j-mb
, versus
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
March 1997 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Triacs BT139B series E
sensitive gate
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
11.5
2.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
March 1997 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Triacs BT139B series E
sensitive gate
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1997 6 Rev 1.000
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