Datasheet BT139B-800G, BT139B-800F, BT139B-800, BT139B-600G, BT139B-600F Datasheet (Philips)

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Philips Semiconductors Product specification

Triacs BT139B series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT139B- 500 600 800 applications requiring high BT139B- 500F 600F 800F bidirectional transient and blocking BT139B- 500G 600G 800G voltage capability and high thermal V cycling performance. Typical voltages applications include motor control, I industrial and domestic lighting, I heating and static switching. current

DRM

T(RMS) TSM

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Repetitive peak off-state 500 600 800 V RMS on-state current 16 16 16 A

Non-repetitive peak on-state 140 140 140 A

PIN DESCRIPTION

1 main terminal 1 2 main terminal 2 3 gate

mb main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DRM

Repetitive peak off-state - 5001600 voltages

T(RMS)

TSM

RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 16 A Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge

t = 20 ms - 140 A

I2tI

t for fusing t = 10 ms - 98 A2s

t = 16.7 ms - 150 A

dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs

I V P P T T

GM GM G(AV) stg j

Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature

-500 -600 -800

T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

October 1997 1 Rev 1.100

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Philips Semiconductors Product specification

Triacs BT139B series

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

th j-mb

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance full cycle - - 1.2 K/W junction to mounting base half cycle - - 1.7 K/W Thermal resistance minimum footprint, FR4 board - 55 - K/W junction to ambient

BT139B- ... ...F ...G

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 10 35 25 50 mA T2- G+ - 22 70 70 100 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 7 40 40 60 mA T2+ G- - 20 60 60 90 mA T2- G- - 8 40 40 60 mA T2- G+ - 10 60 60 90 mA

Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA On-state voltage IT = 20 A - 1.2 1.6 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V Tj = 125 ˚C

Off-state leakage current VD = V

Tj = 125 ˚C

; - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT139B- ... ...F ...G

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage Tj = 125 ˚C; exponential

waveform; gate open circuit

/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µs

com

commutating voltage I

= 16 A;

T(RMS)

/dt = 7.2 A/ms; gate

com

open circuit Gate controlled turn-on ITM = 20 A; VD = V time IG = 0.1 A; dIG/dt = 5 A/µs

; 100 50 200 250 - V/µs

DRM(max)

;- - - 2 - µs

DRM(max)

October 1997 2 Rev 1.100

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Philips Semiconductors Product specification

Triacs BT139B series

Ptot / W

0 5 10 15 20

BT139

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

100

T2- G+ quadrant

10us 100us 1ms 10ms 100ms

, where α = conduction angle.

T(RMS)

BT139

dI /dt limit

T / s

Tmb(max) / C

= 180

120 90

60 30

, versus rms

tot

TSM

time

Tj initial = 25 C max

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

, versus pulse width tp, for

TSM

101

107

113

119

125

IT(RMS) / A

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus mounting base temperature Tmb.

IT(RMS) / A

0.01 0.1 1 10

BT139

Tmb / C

BT139

surge duration / s

99 C

T(RMS)

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 99˚C.

ITSM / A

150

100

1 10 100 1000

BT139

Tj initial = 25 C max

Number of cycles at 50Hz

TSM

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

0.8

0.6

0.4

-50 0 50 100 150

BT136

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

October 1997 3 Rev 1.100

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Philips Semiconductors Product specification

Triacs BT139B series

IGT(Tj)

IGT(25 C)

2.5

1.5

0.5

-50 0 50 100 150

BT139

Tj / C

T2+ G+ T2+ GT2- GT2- G+

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

2.5

1.5

0.5

IL(25 C)

TRIAC

IT / A

Tj = 125 C

Tj = 25 C

Vo = 1.195 V Rs = 0.018 Ohms

0 0.5 1 1.5 2 2.5 3

BT139

typ max

VT / V

Fig.10. Typical and maximum on-state characteristic.

Zth j-mb (K/W)

0.1

0.01

BT139

unidirectional

bidirectional

-50 0 50 100 150 Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

IH(Tj)

IH(25C)

2.5

1.5

0.5

-50 0 50 100 150

TRIAC

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

0.001 10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

dV/dt (V/us)

1000

100

dIcom/dt =

20 A/ms

0 50 100 150

tp / s

pulse width tp.

9.3

12 7.2

Tj / C

th j-mb

off-state dV/dt limit

BT139...G SERIES

BT139 SERIES

BT139...F SERIES

5.6

, versus

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dIT/dt.

October 1997 4 Rev 1.100

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Philips Semiconductors Product specification

Triacs BT139B series

MECHANICAL DATA

Dimensions in mm Net Mass: 1.4 g

2.54 (x2)

MOUNTING INSTRUCTIONS

Dimensions in mm

10.3 max

11 max

15.4

0.85 max (x2)

4.5 max

1.4 max

0.5

Fig.13. SOT404 : centre pin connected to mounting base.

11.5

2.5

Notes

1. Plastic meets UL94 V0 at 1/8".

9.0

17.5

2.0

3.8

5.08

Fig.14. SOT404 : soldering pattern for surface mounting

October 1997 5 Rev 1.100

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Philips Semiconductors Product specification

Triacs BT139B series

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

October 1997 6 Rev 1.100