Datasheet BT138F-800G, BT138F-800F, BT138F-600G, BT138F-600F, BT138F-500G Datasheet (Philips)

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Page 1

Philips Semiconductors Product specification

Triacs BT138F series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT138F- 500 600 800 bidirectional transient and blocking BT138F- 500F 600F 800F voltage capability and high thermal BT138F- 500G 600G 800G cycling performance. Typical V applications include motor control, voltages industrial and domestic lighting, I heating and static switching. I

DRM

T(RMS) TSM

PINNING - SOT186 PIN CONFIGURATION SYMBOL

Repetitive peak off-state 500 600 800 V RMS on-state current 12 12 12 A

Non-repetitive peak on-state 90 90 90 A current

PIN DESCRIPTION

case

1 main terminal 1 2 main terminal 2 3 gate

case isolated

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DRM

T(RMS)

TSM

Repetitive peak off-state - 5001600 voltages

RMS on-state current full sine wave; Ths ≤ 56 ˚C - 12 A Non-repetitive peak full sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied V

t = 20 ms - 90 A

I2tI

t for fusing t = 10 ms - 40 A2s

t = 16.7 ms - 100 A

dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs

I V P P T T

GM GM

G(AV) stg j

Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature

-500 -600 -800

DRM(max)

T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

February 1996 1 Rev 1.100

Page 2

Philips Semiconductors Product specification

Triacs BT138F series

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

th j-hs

th j-a

Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink

Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink

Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.0 K/W

without heatsink compound - - 5.5 K/W Thermal resistance in free air - 55 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT138F- ... ...F ...G

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 10 35 25 50 mA T2- G+ - 22 70 70 100 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 7 40 40 60 mA T2+ G- - 20 60 60 90 mA T2- G- - 8 40 40 60 mA T2- G+ - 10 60 60 90 mA

Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA On-state voltage IT = 15 A - 1.4 1.65 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V

Tj = 125 ˚C Off-state leakage current VD = V

; - 0.1 0.5 mA

DRM(max)

Tj = 125 ˚C

February 1996 2 Rev 1.100

Page 3

Philips Semiconductors Product specification

Triacs BT138F series

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of change of VDM = 67% V

off-state voltage Tj = 125 ˚C; exponential

waveform; gate open

circuit

/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µs

com

commutating voltage I

= 12 A;

T(RMS)

/dt = 5.4 A/ms; gate

com

open circuit Gate controlled turn-on ITM = 16 A; VD = V time IG = 0.1 A; dIG/dt = 5 A/µs

BT138F- ... ...F ...G

; 100 50 200 250 - V/µs

DRM(max)

;- - - 2 - µs

DRM(max)

February 1996 3 Rev 1.100

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Philips Semiconductors Product specification

Triacs BT138F series

Ptot / W

0 5 10 15

BT138

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

100

T2- G+ quadrant

10us 100us 1ms 10ms 100ms

, where α = conduction angle.

T(RMS)

BT138

dI /dt limit

Tj initial = 125 C max

T / s

Ths(max) / C

= 180

120 90

60 30

, versus rms

tot

TSM

time

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

, versus pulse width tp, for

TSM

105

125

IT(RMS) / A

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus heatsink temperature Ths.

IT(RMS) / A

0.01 0.1 1 10

BT138X

56 C

Ths / C

BT138

surge duration / s

T(RMS)

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Ths ≤ 56˚C.

ITSM / A

100

1 10 100 1000

BT138

Tj initial = 125 C max

Number of cycles at 50Hz

TSM

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

0.8

0.6

0.4

-50 0 50 100 150

BT136

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996 4 Rev 1.100

Page 5

Philips Semiconductors Product specification

Triacs BT138F series

IGT(Tj)

IGT(25 C)

2.5

1.5

0.5

-50 0 50 100 150

BT138

Tj / C

T2+ G+ T2+ GT2- G-

T2- G+

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

2.5

1.5

0.5

IL(25 C)

TRIAC

IT / A

Tj = 125 C

Tj = 25 C

Vo = 1.175 V

Rs = 0.0316 Ohms

0 0.5 1 1.5 2 2.5 3

BT138

typ max

VT / V

Fig.10. Typical and maximum on-state characteristic.

Zth j-hs (K/W)

with heatsink compound without heatsink compound

unidirectional

0.1

0.01

BT138

bidirectional

-50 0 50 100 150 Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

IH(Tj)

IH(25C)

2.5

1.5

0.5

-50 0 50 100 150

TRIAC

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

0.001 10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

dV/dt (V/us)

1000

100

dIcom/dt =

15 A/ms

0 50 100 150

tp / s

pulse width tp.

Tj / C

off-state dV/dt limit

4.2

5.49.1

, versus

th j-hs

BT138...G SERIES

BT138 SERIES

BT138...F SERIES

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dIT/dt.

February 1996 5 Rev 1.100

Page 6

Philips Semiconductors Product specification

Triacs BT138F series

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g

3.5 max

not tinned

10.2 max

5.7

max

3.2

3.0

4.4

0.9

0.5

4.4

4.0

seating

plane

13.5 min

4.4

max

2.9 max

7.9

7.5 17

max

123

0.4

5.08

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

0.9

0.7

2.54

top view

0.55 max

1.3

February 1996 6 Rev 1.100

Page 7

Philips Semiconductors Product specification

Triacs BT138F series

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996 7 Rev 1.100