Datasheet BT137F-500G, BT137F-500F, BT137F-800, BT137F-600G, BT137F-600F Datasheet (Philips)

Philips Semiconductors Product specification

Triacs BT137F series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT
plastic envelope, intended for use in
applications requiring high BT137F- 500 600 800
bidirectional transient and blocking BT137F- 500F 600F 800F
voltage capability and high thermal BT137F- 500G 600G 800G
cycling performance. Typical V
applications include motor control, voltages
industrial and domestic lighting, I
heating and static switching. I

DRM

T(RMS)
TSM

PINNING - SOT186 PIN CONFIGURATION SYMBOL

Repetitive peak off-state 500 600 800 V
RMS on-state current 8 8 8 A

Non-repetitive peak on-state 55 55 55 A
current

PIN DESCRIPTION

case

1 main terminal 1
2 main terminal 2
3 gate

case isolated

123

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 5001600
voltages

RMS on-state current full sine wave; Ths ≤ 73 ˚C - 8 A
Non-repetitive peak full sine wave; Tj = 125 ˚C prior
on-state current to surge; with reapplied V

t = 20 ms - 55 A

I2tI

2

t for fusing t = 10 ms - 15 A2s

t = 16.7 ms - 60 A

dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs

I
V
P
P
T
T

GM

GM
GM

G(AV)
stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

-500 -600 -800

DRM(max)

T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs

1

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

February 1996 1 Rev 1.100

Philips Semiconductors Product specification

Triacs BT137F series

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink

Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink

Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W

without heatsink compound - - 6.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT137F- ... ...F ...G

I

GT

I

L

I

H

V

T

V

GT

I

D

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 7 30 30 45 mA
T2+ G- - 16 45 45 60 mA
T2- G- - 5 30 30 45 mA
T2- G+ - 7 45 45 60 mA

Holding current VD = 12 V; IGT = 0.1 A - 5 20 20 40 mA
On-state voltage IT = 10 A - 1.3 1.65 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V

Tj = 125 ˚C
Off-state leakage current VD = V

; - 0.1 0.5 mA

DRM(max)

Tj = 125 ˚C

February 1996 2 Rev 1.100

Philips Semiconductors Product specification

Triacs BT137F series

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of change of VDM = 67% V

off-state voltage Tj = 125 ˚C; exponential

waveform; gate open

circuit

dV

/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µs

com

t

gt

commutating voltage I

= 8 A;

T(RMS)

dI

/dt = 3.6 A/ms; gate

com

open circuit
Gate controlled turn-on ITM = 12 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs

BT137F- ... ...F ...G

; 100 50 200 250 - V/µs

DRM(max)

;- - - 2 - µs

DRM(max)

February 1996 3 Rev 1.100

Philips Semiconductors Product specification

Triacs BT137F series

Ptot / W

12

10

8

6

4

2

0

0246810

BT137

1

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

100

, where α = conduction angle.

T(RMS)

BT137

I

dI /dt limit

T

Ths(max) / C

= 180

120
90

60
30

, versus rms

tot

I

T

Tj initial = 125 C max

TSM

time

T

71

80

89

98

107

116

125

IT(RMS) / A

10

8

6

4

2

0

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus heatsink temperature Ths.

IT(RMS) / A

25

20

15

10

BT137X

73 C

Ths / C

T(RMS)

BT137

,

T2- G+ quadrant

10

10us 100us 1ms 10ms 100ms

T / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

ITSM / A

60

50

40

30

20

10

0

1 10 100 1000

, versus pulse width tp, for

TSM

BT137

I

T

T

Tj initial = 125 C max

Number of cycles at 50Hz

I

TSM

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

5

0

0.01 0.1 1 10
surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current I

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Ths ≤ 73˚C.

VGT(Tj)

BT136

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996 4 Rev 1.100

Philips Semiconductors Product specification

Triacs BT137F series

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

BT137

Tj / C

T2+ G+
T2+ G­T2- G­T2- G+

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

2.5

1.5

IL(25 C)

3

2

1

TRIAC

IT / A

25

Tj = 125 C

Tj = 25 C

20

Vo = 1.264 V
Rs = 0.0378 Ohms

15

10

5

0

0 0.5 1 1.5 2 2.5 3

BT137

typ

VT / V

max

Fig.10. Typical and maximum on-state characteristic.

.

j

Zth j-hs (K/W)

10

with heatsink compound
without heatsink compound

1

0.1

unidirectional

BT137

bidirectional

t

P

p

D

0.5

0

-50 0 50 100 150
Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

IH(Tj)

IH(25C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

TRIAC

Tj / C

.

j

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

.

j

t

0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

Fig.11. Transient thermal impedance Z

pulse width tp.

dV/dt (V/us)

1000

off-state dV/dt limit

100

dIcom/dt =

10 A/ms

10

1

0 50 100 150

7.9 4.7

6.1 3.6

Tj / C

2.8

, versus

th j-hs

BT137...G SERIES

BT137 SERIES

BT137...F SERIES

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dIT/dt.

February 1996 5 Rev 1.100

Philips Semiconductors Product specification

Triacs BT137F series

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

3.5 max

not tinned

10.2
max

5.7

max

3.2

3.0

4.4

0.9

0.5

4.4

4.0

seating

plane

13.5
min

4.4

max

2.9 max

7.9

7.5
17

max

123

M

0.4

5.08

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

0.9

0.7

2.54

top view

0.55 max

1.3

February 1996 6 Rev 1.100

Philips Semiconductors Product specification

Triacs BT137F series

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

February 1996 7 Rev 1.100