Datasheet BT134W-500G, BT134W-500F, BT134W-800G, BT134W-800F, BT134W-800 Datasheet (Philips)

Philips Semiconductors Product specification

Triacs BT134W series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT134W- 500 600 800
applications requiring high BT134W- 500F 600F 800F
bidirectional transient and blocking BT134W- 500G 600G 800G
voltage capability and high thermal V
cycling performance. Typical voltages
applications include motor control, I
industrial and domestic lighting, I
heating and static switching. current

DRM

T(RMS)
TSM

PINNING - SOT223 PIN CONFIGURATION SYMBOL

Repetitive peak off-state 500 600 800 V
RMS on-state current 1 1 1 A

Non-repetitive peak on-state 10 10 10 A

PIN DESCRIPTION

4

1 main terminal 1
2 main terminal 2
3 gate

tab main terminal 2

1

23

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 5001600
voltages

RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge

t = 20 ms - 10 A

I2tI

2

t for fusing t = 10 ms - 0.5 A2s

t = 16.7 ms - 11 A

dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs

I
V
P
P
T
T

GM

GM
GM

G(AV)
stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

-500 -600 -800

T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs

1

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

September 1997 1 Rev 1.200

Philips Semiconductors Product specification

Triacs BT134W series

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-sp

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

I

D

Thermal resistance full or half cycle - - 15 K/W
junction to solder point
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W

BT134W- ... ...F ...G

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA

Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
On-state voltage IT = 2 A - 1.2 1.50 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C

Off-state leakage current VD = V

Tj = 125 ˚C

; - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT134W- ... ...F ...G

dVD/dt Critical rate of rise of VDM =67% V

off-state voltage Tj = 125 ˚C; exponential

waveform; gate open
circuit

dV

/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/µs

com

t

gt

commutating voltage I

= 1 A;

T(RMS)

dI

/dt = 1.8 A/ms; gate

com

open circuit
Gate controlled turn-on ITM = 1.5 A; - - - 2 - µs
time VD = V

DRM(max)

dIG/dt = 5 A/µs;

; 100 50 200 250 - V/µs

DRM(max)

; IG = 0.1 A;

September 1997 2 Rev 1.200

Philips Semiconductors Product specification

Triacs BT134W series

1

BT134W

IT(RMS) / A

Tsp(max) / C

Ptot / W

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0 0.2 0.4 0.6 0.8 1 1.2

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

100

dI /dt limit

T2- G+ quadrant

10

, where α = conduction angle.

T(RMS)

BT134W

I

T

T

Tj initial = 25 C max

T

104

107

= 180

110

120
90

113

60

116

30

119

122

125

, versus rms

tot

I

TSM

time

IT(RMS) / A

1.2

1

0.8

0.6

0.4

0.2

0

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus solder point temperature Tsp.

IT(RMS) / A

2

1.5

1

0.5

BT134W

108 C

Tsp / C

T(RMS)

BT134W

,

1
10us 100us 1ms 10ms 100ms

T / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

ITSM / A

12

10

8

6

4

2

0

1 10 100 1000

, versus pulse width tp, for

TSM

BT134W

I

T

T

Tj initial = 25 C max

Number of cycles at 50Hz

I

TSM

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

0

0.01 0.1 1 10
surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current I

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tsp ≤ 108˚C.

VGT(Tj)

BT136

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

September 1997 3 Rev 1.200

Philips Semiconductors Product specification

Triacs BT134W series

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

BT136

Tj / C

T2+ G+
T2+ G­T2- G­T2- G+

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

IL(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

TRIAC

Tj / C

j

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

.

j

IT / A

2

Tj = 125 C
Tj = 25 C

1.5

Vo = 1.0 V
Rs = 0.21 Ohms

1

0.5

0

0 0.5 1 1.5 2

BT134W

typ

max

VT / V

Fig.10. Typical and maximum on-state characteristic.

.

Zth j-sp (K/W)

100

10

1

0.1

0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

pulse width tp.

BT134W

unidirectional

tp / s

bidirectional

t

P

p

D

t

th j-sp

, versus

IH(Tj)

IH(25C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

TRIAC

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

.

j

temperature, parameter commutation dIT/dt. The triac

dVcom/dt (V/us)

1000

off-state dV/dt limit

BT134...G SERIES

100

10

dIcom/dt = 5.1 3.9 2.3

1

0 50 100 150

A/ms

Tj / C

BT134 SERIES

BT134...F SERIES

1.83

1.4

Fig.12. Typical commutation dV/dt versus junction

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dIT/dt.

September 1997 4 Rev 1.200

Philips Semiconductors Product specification

Triacs BT134W series

MOUNTING INSTRUCTIONS

Dimensions in mm.

3.8

min

1.5
min

Fig.13. soldering pattern for surface mounting SOT223.

PRINTED CIRCUIT BOARD

1.5

min

1.5

min
(3x)

4.6

2.3

6.3

Dimensions in mm.

36

18

60

4.6

9

10

7

50

15

4.5

Fig.14. PCB for thermal resistance and power rating for SOT223.

PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).

September 1997 5 Rev 1.200

Philips Semiconductors Product specification

Triacs BT134W series

MECHANICAL DATA

Dimensions in mm
Net Mass: 0.11 g

16

max

1.8

max

0.32

0.24

0.10

0.02

10
max

13

1.05

0.85

6.7

6.3

3.1

2.9

4

1

2.3

23

0.80

0.60

4.6

B

A

7.3

6.7

M

B

0.1

3.7

3.3

(4x)

Fig.15. SOT223 surface mounting package.

Notes

1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.

2. Epoxy meets UL94 V0 at 1/8".

AM0.2

September 1997 6 Rev 1.200

Philips Semiconductors Product specification

Triacs BT134W series

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 7 Rev 1.200