Datasheet BT132-600D, BT132-500D Datasheet (Philips)

Page 1

Philips Semiconductors Product specification

Triacs BT132 series D logic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT132- 500D 600D bidirectional switching and phase V

DRM

Repetitive peak off-state voltages 500 600 V

control applications. These devices I

T(RMS)

RMS on-state current 1 1 A

are intended to be interfaced directly I

TSM

Non-repetitive peak on-state current 16 16 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

PINNING - TO92 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 2 2 gate 3 main terminal 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600

DRM

Repetitive peak off-state - 500

600

voltages

T(RMS)

RMS on-state current full sine wave; T

lead

≤51 ˚C - 1 A

TSM

Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge

t = 20 ms - 16 A t = 16.7 ms - 17.6 A

I2tI

t for fusing t = 10 ms - 1.28 A2s

dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs

T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs

Peak gate current - 2 A

Peak gate voltage - 5 V

Peak gate power - 5 W

G(AV)

Average gate power over any 20 ms period - 0.5 W

stg

Storage temperature -40 150 ˚C

Operating junction - 125 ˚C temperature

T1T2

321

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

January 1998 1 Rev 1.000

Page 2

Philips Semiconductors Product specification

Triacs BT132 series D logic level

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

th j-lead

Thermal resistance full cycle - - 60 K/W junction to lead half cycle - - 80 K/W

th j-a

Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 2.0 5 mA T2+ G- - 2.5 5 mA T2- G- - 2.5 5 mA T2- G+ - 5.0 10 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 1.6 10 mA T2+ G- - 4.5 15 mA T2- G- - 1.2 10 mA T2- G+ - 2.2 15 mA

Holding current VD = 12 V; IGT = 0.1 A - 1.2 10 mA

On-state voltage IT = 5 A - 1.4 1.70 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

Off-state leakage current VD = V

DRM(max)

; Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% V

DRM(max)

; Tj = 125 ˚C; - 5 - V/µs

off-state voltage exponential waveform; RGK = 1 kΩ

Gate controlled turn-on ITM = 6 A; VD = V

DRM(max)

; IG = 0.1 A; - 2 - µs

time dIG/dt = 5 A/µs

January 1998 2 Rev 1.000

Page 3

Philips Semiconductors Product specification

Triacs BT132 series D logic level

Fig.1. Maximum on-state dissipation, P

tot

, versus rms

on-state current, I

T(RMS)

, where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peak

on-state current I

TSM

, versus pulse width tp, for

sinusoidal currents, tp ≤ 20ms.

Fig.3. Maximum permissible non-repetitive peak

on-state current I

TSM

, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current I

T(RMS)

versus lead temperature T

lead

Fig.5. Maximum permissible repetitive rms on-state

current I

T(RMS)

, versus surge duration, for sinusoidal

currents, f = 50 Hz; T

lead

≤ 51˚C.

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0.2 0.4 0.6 0.8 1 1.2

0.2

0.4

0.6

0.8

1.2

1.4

=180

120 90

60 30

BT132D

IT(RMS) / A

Ptot / W

Tmb(max) / C

125

113

101

-50 0 50 100 150

0.2

0.4

0.6

0.8

1.2

BT132D

51 C

Tmb / C

IT(RMS) / A

10us 100us 1ms 10ms 100ms

100

1000

BT132D

T / s

ITSM / A

TSM

time

Tj initial = 25 C max

T2- G+ quadrant

dI /dt limit

0.01 0.1 1 10

0.5

1.5

2.5

BT132D

surge duration / s

IT(RMS) / A

10 100 1000

BT136

Number of cycles at 50Hz

ITSM / A

TSM

time

Tj initial = 25 C max

-50 0 50 100 150

0.4

0.6

0.8

1.2

1.4

1.6

BT136

Tj / C

VGT(Tj)

VGT(25 C)

January 1998 3 Rev 1.000

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Philips Semiconductors Product specification

Triacs BT132 series D logic level

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z

th j-lead

, versus

pulse width tp.

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

-50 0 50 100 150

0.5

1.5

2.5

BT136D

Tj / C

T2+ G+ T2+ GT2- GT2- G+

IGT(Tj)

IGT(25 C)

0 0.5 1 1.5 2 2.5 3

BT136

VT / V

IT / A

Tj = 125 C

Tj = 25 C

typ max

Vo = 1.27 V

Rs = 0.091 ohms

-50 0 50 100 150

0.5

1.5

2.5

TRIAC

Tj / C

IL(Tj)

IL(25 C)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

0.01

0.1

Zth j-sp (K/W)

100

unidirectional

bidirectional

BT134W

-50 0 50 100 150

0.5

1.5

2.5

TRIAC

Tj / C

IH(Tj)

IH(25C)

0 50 100 150

100

1000

Tj / C

dVD/dt (V/us)

January 1998 4 Rev 1.000

Page 5

Philips Semiconductors Product specification

Triacs BT132 series D logic level

MECHANICAL DATA

Dimensions in mm Net Mass: 0.2 g

Fig.13. TO92 Variant; plastic envelope.

Notes

1. Epoxy meets UL94 V0 at 1/8".

0.48

0.40

0.40 min

12.7 min

5.2 max

4.8 max

4.2 max

1.6

2.54

0.66

0.56

123

January 1998 5 Rev 1.000

Page 6

Philips Semiconductors Product specification

Triacs BT132 series D logic level

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

January 1998 6 Rev 1.000