Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSX62; BSX63
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 19
Page 2
Philips Semiconductors Product specification
NPN switching transistors BSX62; BSX63
FEATURES
• High current (max. 3 A)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Medium power switching.
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
handbook, halfpage
1
2
3
MAM317
3
2
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSX62 −−60 V
BSX63 −−80 V
V
CEO
collector-emitter voltage open base
BSX62 −−40 V
BSX63 −−60 V
I
C
P
tot
h
FE
collector current (DC) −−3A
total power dissipation T
≤ 25 °C −−5W
case
DC current gain IC= 1 A; VCE=1V
BSX62-10; BSX63-10 63 100 160
BSX62-16; BSX63-16 100 160 250
f
T
t
off
transition frequency IC= 200 mA; VCE= 10 V; f = 100 MHz 30 70 − MHz
turn-off time I
Con
= 1 A; I
= 50 mA; I
Bon
= −50 mA −−1.5 µs
Boff
1997 Jun 19 2
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Philips Semiconductors Product specification
NPN switching transistors BSX62; BSX63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSX62 − 60 V
BSX63 − 80 V
collector-emitter voltage open base
BSX62 − 40 V
BSX63 − 60 V
emitter-base voltage open collector − 5V
collector current (DC) − 3A
peak collector current − 3A
peak base current − 500 mA
total power dissipation T
≤ 25 °C − 5W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 200 K/W
thermal resistance from junction to case 28 K/W
1997 Jun 19 3
Page 4
Philips Semiconductors Product specification
NPN switching transistors BSX62; BSX63
CHARACTERISTICS
T
=25°C unless otherwise specified.
case
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CBO
I
EBO
h
FE
h
FE
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
Switching times (between 10% and 90% levels)
t
on
t
off
collector cut-off current
BSX62 V
=40V −−100 nA
CB
V
=40V; T
CB
= 150 °C −−100 µA
case
collector cut-off current
BSX63 V
=60V −−100 nA
CB
V
=60V; T
CB
= 150 °C −−100 µA
case
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 100 mA; VCE=1V
BSX62-10; BSX63-10 − 110 −
BSX62-16; BSX63-16 − 180 −
DC current gain IC= 1 A; VCE=1V
BSX62-10; BSX63-10 63 100 160
BSX62-16; BSX63-16 100 160 250
DC current gain IC= 2 A; VCE=5V
BSX62-10; BSX63-10 − 70 −
BSX62-16; BSX63-16 − 120 −
collector-emitter saturation voltage IC= 1 A; IB= 100 mA −−700 mV
I
= 2 A; IB= 200 mA −−800 mV
C
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
I
= 2 A; IB= 200 mA −−1.3 V
C
base-emitter voltage IC= 100 mA; VCE=1V −−1V
= 1 A; VCE=1V −−1.2 V
I
C
I
= 2 A; VCE=5V −−1.3 V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−70 pF
transition frequency IC= 200 mA; VCE= 10 V; f = 100 MHz 30 70 − MHz
turn-on time I
Con
= 1 A; I
= 50 mA; I
Bon
= −50 mA −−300 ns
Boff
turn-off time −−1.5 µs
1997 Jun 19 4
Page 5
Philips Semiconductors Product specification
NPN switching transistors BSX62; BSX63
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads SOT5/11
j
B
α
1
k
2
D
1
seating plane
w
M MBM
A
b
3
a
A
D
0 5 10 mm
A L
scale
DIMENSIONS (mm are the original dimensions)
UNIT a b D D1jkLw
A
6.60
mm
6.35
OUTLINE
VERSION
SOT5/11 TO-39
5.08
0.48
9.39
8.33
0.41
9.08
IEC JEDEC EIAJ
8.18
0.85
0.75
0.95
0.75
14.2
0.2
12.7
REFERENCES
α
°
45
1997 Jun 19 5
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
Page 6
Philips Semiconductors Product specification
NPN switching transistors BSX62; BSX63
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 19 6
Page 7
Philips Semiconductors Product specification
NPN switching transistors BSX62; BSX63
NOTES
1997 Jun 19 7
Page 8
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Jun 19 Document order number: 9397 75002164
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