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SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996 ✪
FEATURES
* Fast Switching
* High h
FE
PARTMAKING DETAIL — 627
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Vo ltage V
CBO
-85 V
Collector-Emitter Voltage V
CEO
-72 V
Emitter-Base Voltage V
EBO
-10 V
Pea Pulse Current I
CM
-1.5 A
Continuous Colle ctor Current I
C
-500 mA
Base Current I
B
-100 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j:Tstg
-65 to +150 °C
ELECTRICAL CHARA CTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-85 V
I
C
=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-72 V IC=-10mA, IB=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-10 V
I
E
=-10µA, IC=0
Emitter Cut-Off Current I
EBO
-10
µA
VEB=-8V, IE=0
Collector-Emitter
Cut-Off Current
I
CES
-10
µA
VCE=-72V, IC=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.3
-1.3
V
V
IC=-500mA, IB=-0.5mA
I
C
=-500mA, IB=-0.5mA
T
j
=150°C
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.9 V IC=-500mA, IB=-0.5mA
Static Forward Current
Transfer Ratio
h
FE
1K
2K
IC=-150mA, VCE=-10V*
I
C
=-500mA, VCE=-10V*
Turn On Time t
on
400 Typical ns IC=-500mA
I
Bon=IBoff
=-0.5mA
Turn Off Time t
off
1.5K Typical ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
SOT89
BST62-70
C
C
B
E
3 - 82
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