Datasheet BST52, BST51, BST50 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D109

BST50; BST51; BST52

NPN Darlington transistors

Product specification
Supersedes data of 1997 Apr 16

1999 Apr 26

Philips Semiconductors Product specification

NPN Darlington transistors BST50; BST51; BST52

FEATURES

• High current (max. 0.5 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.

DESCRIPTION

NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.

MARKING

TYPE NUMBER MARKING CODE

BST50 AS1
BST51 AS2
BST52 AS3

PINNING

PIN DESCRIPTION

1 emitter
2 collector
3 base

handbook, halfpage

3

123

Bottom view

MAM327

Fig.1 Simplified outline (SOT89) and symbol.

2

1

1999 Apr 26 2

Philips Semiconductors Product specification

NPN Darlington transistors BST50; BST51; BST52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

I

CM

I

B

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter

BST50 − 60 V
BST51 − 80 V
BST52 − 90 V

collector-emitter voltage VBE=0

BST50 − 45 V
BST51 − 60 V

BST52 − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 0.5 A
peak collector current − 1.5 A
base current (DC) − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 1.3 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

2

.

1999 Apr 26 3

Philips Semiconductors Product specification

NPN Darlington transistors BST50; BST51; BST52

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

R

th j-s

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

EBO

h

FE

V

CEsat

V

BEsat

f

T

thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

collector cut-off current

BST50 V
BST51 V
BST52 V

= 0; VCE=45V −−50 nA

BE

= 0; VCE=60V −−50 nA

BE

= 0; VCE=80V −−50 nA

BE

emitter cut-off current IC= 0; VEB=4V −−50 nA
DC current gain VCE= 10 V; note 1; (see Fig.2)

= 150 mA 1000 −−

I

C

I

= 500 mA 2000 −−

C

collector-emitter saturation
voltage

IC= 500 mA; IB= 0.5 mA −−1.3 V

= 500 mA; IB= 0.5 mA;

I

C

−−1.3 V

Tj= 150 °C
base-emitter saturation voltage IC= 500 mA; IB= 0.5 mA −−1.9 V
transition frequency IC= 500 mA; VCE=5V;

− 200 − MHz

f = 100 MHz

Switching times (between 10% and 90% levels); (see Fig.3)
t

on

t

off

turn-on time I
turn-off time − 1500 − ns

= 500 mA; I

Con

I

= −0.5 mA

Boff

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

1999 Apr 26 4

= 0.5 mA;

Bon

− 400 − ns

Philips Semiconductors Product specification

NPN Darlington transistors BST50; BST51; BST52

5000

handbook, full pagewidth

h

FE

4000

3000

2000

1000

0

−1

10

VCE=10V.

1

10 10

Fig.2 DC current gain; typical values.

MGD838

2

IC (mA)

3

10

R1

R2

V

R

B

handbook, full pagewidth

Vi= 10V; T = 200 µs; tp=6µs; tr=tf≤3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB=10kΩ; RC=18Ω.
VBB= −1.8 V; VCC= 10.7 V.
Oscilloscope: input impedance Zi=50Ω.

oscilloscope

V

(probe)

450 Ω

i

Fig.3 Test circuit for switching times.

1999 Apr 26 5

BB

V

CC

R

C

V

(probe)

o

DUT

MLB826

450 Ω

oscilloscope

Philips Semiconductors Product specification

NPN Darlington transistors BST50; BST51; BST52

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

w M

D

b

3

B

A

E

L

123

b

2

b

1

e

1

e

H

E

c

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

mm

OUTLINE
VERSION

A

1.6

1.4

SOT89

b

0.48

0.35

c

b

b

2

1

0.53

0.40

3

0.44

1.8

0.37

1.4

IEC JEDEC EIAJ

D

4.6

4.4

REFERENCES

2.6

2.4

E

e

3.0

1999 Apr 26 6

e

1.5

L

H

E

1

min.

4.25

3.75

0.8

w

0.13

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN Darlington transistors BST50; BST51; BST52

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 26 7

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 26 Document order number: 9397 750 05788