Datasheet BSS84PH6433 Specification

ESD Class

JESD22-A114-HBM

Class 0

BSS84P

SIPMOS Small-Signal-Transistor

Feature

·

P-Channel

·

Enhancement mode

·

Logic Level

·

Avalanche rated

·

dv/dt rated

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

Type

BSS84P

Package

PG-SOT-23

BSS84P PG-SOT-23H6433:10000pcs/r.

Maximum Ratings, at

T

= 25 °C, unless otherwise specified

A

Tape and Reel

H6327:3000pcs/r.

Marking

YBs

Product Summary

V

DS

R

DS(on)

I

D

PG-SOT-23

-60 V 8

-0.17 A

3

1

Gate pin1

Source pin 2

W

2

VPS05161

Drain pin 3

Parameter

Continuous drain current

TA=25°C T

=70°C

A

Pulsed drain current

TA=25°C

Avalanche energy, single pulse

ID=-0.17 A , VDD=-25V, RGS=25

W

Avalanche energy, periodic limited by T Reverse diode dv/dt

IS=-0.17A, VDS=-48V, di/dt=-200A/µs, T

jmax

=150°C

Gate source voltage

Power dissipation

TA=25°C

Operating and storage temperature

jmax

Symbol

I

D

I

D puls

E

AS

E

AR

dv/dt

V

GS

P

tot

T

,

T

j

stg

Value

-0.17

-0.14

-0.68

2.6 mJ

0.036

-6

±20

0.36

-55... +150

Unit

A

kV/µs

V W

°C

IEC climatic category; DIN IEC 68-1

Rev 2.7 Page 1

55/150/56

2011-07-11

Thermal Characteristics

BSS84P

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

R

thJS

- - 200 K/W (Pin 3) SMD version, device on PCB:

@ min. footprint @ 6 cm

2

cooling area

1)

R

thJA

-

Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V

(BR)DSS

-60 - - V

-

350 300

Gate threshold voltage, VGS = V

I

=-20µA

D

Zero gate voltage drain current

VDS=-60V, VGS=0, TA=25°C V

=-60V, VGS=0, TA=125°C

DS

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-4.5V, ID=-0.14A

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

DS(on)

-1 -1.5 -2

-

-0.1

-10

-1

-100

- -10 -100 nA

- 8 12

- 5.8 8

µA

W

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air. Rev 2.7 Page 2

2011-07-11

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

BSS84P

Parameter

Symbol Conditions Values Unit

Dynamic Characteristics

Transconductance g

Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge

Q

Gate to drain charge Q Gate charge total Q

fs

iss oss

rss d(on) r d(off) f

gs gd

g

min. typ. max.

V

£

2*ID*R

DS

I

=-0.14A

D

VGS=0, VDS=-25V, f=1MHz

DS(on)max

,

0.065 0.13 - S

- 15 19 pF

- 6 8

- 2 3

VDD=-30V, VGS=-4.5V, I

=-0.14A, RG=25

D

W

- 6.7 10 ns

- 16.2 24.3

- 8.6 12.9

- 20.5 30.8

VDD=-48V, ID=-0.17A - 0.25 0.37 nC

- 0.3 0.45

VDD=-48V, ID=-0.17A, V

=0 to -10V

GS

- 1 1.5

Gate plateau voltage V(plateau)

Reverse Diode

Inverse diode continuous

I

S

forward current Inv. diode direct current, pulsed Inverse diode forward voltage V

Reverse recovery time t Reverse recovery charge Q

I

SM

rr

SD

rr

VDD=-48V, ID=-0.17A - -3.42 - V

TA=25°C - - -0.17 A

- - -0.68

VGS=0, IF=-0.17A - -0.93 -1.24 V VR=-30V, I

di

/dt=100A/µs

F

F=lS

,

- 23 34 ns

- 10 15 nC

Rev 2.7 Page 3

2011-07-11

BSS84P

1 Power dissipation

P

= f (TA)

tot

BSS 84 P

0.38

W

0.32

0.28

tot

0.24

P

0.2

0.16

0.12

0.08

0.04

0

0 20 40 60 80 100 120

°C

2 Drain current

I

= f (TA)

D

parameter: V

BSS 84 P

-0.18

A

-0.14

-0.12

D

I

-0.1

-0.08

-0.06

-0.04

-0.02

160

T

A

0

0 20 40 60 80 100 120

GS

³

10 V

°C

160

T

A

3 Safe operating area

I

= f ( VDS )

D

parameter : D = 0 , T

1

BSS 84 P

-10

A

0

-10

D

I

-1

-10

R

-2

-10

-3

-10

-1

-10

A

S

D

V

=

)

n

o

(

S

D

0

-10

= 25 °C

I

D

/

-10

4 Transient thermal impedance

Z

= f (tp)

thJA

parameter : D = t

3

BSS 84 P

10

K/W

2

thJA

Z

10

1

0

-1

10

single pulse

-5

10

-4

t

= 170.0µs

p

1 ms

10 ms

DC

1

V

DS

-10

2

10

/T

p

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

-2

10

-1

10

10 0 10 1 10

2

t

4

10

s

p

Rev 2.7 Page 4

2011-07-11

BSS84P

5 Typ. output characteristic

I

= f (VDS)

D

parameter: T

BSS 84 P

-0.4

A

-0.32

-0.28

D

I

-0.24

-0.2

-0.16

-0.12

-0.08

-0.04

0

0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4

P

tot

= 25 °C

j

= 0.36W

l

j

k

h

i

VGS [V]

g

f

e

d

c

b

a

a -2.5 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 k -8.0 l -10.0

V

DS

6 Typ. drain-source on resistance

R

DS(on)

parameter: V

R

-5

= f (ID)

; Tj = 25 °C

GS

BSS 84 P

26

a

GS

-2.5

a

[V] =

b

-3.0

b

c

-3.5

W

22 20 18

DS(on)

16 14 12 10

8 6 4

V

2 0

0 -0.04-0.08-0.12-0.16 -0.2 -0.24-0.28-0.32A-0.38

d

-4.0

-4.5

c

d

e

f

g

h

-5.0

-5.5

-6.0

-6.5

i

f

-7.0

g

h

i

j

k

l

j

k

l

-8.0

-10.0

I

D

7 Typ. transfer characteristics

I

= f ( VGS ); |V

D

DS

³

2 x |I

|

D

x R

|

DS(on)max

parameter: Tj = 25 °C

0.4

A

0.3

D

0.25

- I

0.2

0.15

0.1

0.05

0

0 1 2 3 4

8 Typ. forward transconductance

g

= f(ID)

fs

parameter: T

0.16

S

0.12

fs

0.1

g

0.08

0.06

0.04

0.02

V

- V

6

GS

0

0 0.04 0.08 0.12 0.16

= 25 °C

j

A

0.22

-I

D

Rev 2.7 Page 5

2011-07-11

BSS84P

9 Drain-source on-state resistance

R

DS(on)

parameter : I

R

= f (Tj)

= -0.17 A, VGS = -10 V

D

BSS 84 P

21

W

18

16

14

DS(on)

12

10

8

6

4

2

0

-60 -20 20 60 100

98%

typ

°C

10 Typ. gate threshold voltage

V

parameter: V

180

T

A

= f (Tj)

GS(th)

= V

GS

2.4

V

2

1.8

GS(th)

- V

1.6

1.4

1.2

1

0.8

0.6

0.4

-60 -20 20 60 100

DS

2%

typ.

98%

°C

160

T

A

11 Typ. capacitances

C = f (V parameter: V

10

pF

C

10

)

DS

=0, f=1 MHz

GS

2

1

0

0 5 10

Ciss

Coss

Crss

12 Forward character. of reverse diode

I

= f (VSD)

F

parameter: T

0

BSS 84 P

-10

A

-1

-10

F

I

-2

-10

-3

V

- V

20

DS

-10 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4

, tp = 80 µs

j

Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)

-3

V

SD

Rev 2.7 Page 6

2011-07-11

BSS84P

13 Typ. avalanche energy

E

= f (TA), parameter:

AS

I

= -0.17 A , VDD = -25 V, RGS = 25

D

3

mJ

2

AS

E

1.5

1

0.5

0

25 45 65 85 105 125

°C

14 Typ. gate charge

V

= f (Q

GS

W

165

T

A

parameter: I

BSS 84 P

-16

V

-12

GS

-10

V

-8

-6

-4

-2

0

0 0.2 0.4 0.6 0.8 1 1.2

)

Gate

= -0.17 A pulsed; Tj = 25 °C

D

V

0,2

DS max

0,8

V

DS max

nC

Q

1.5

Gate

15 Drain-source breakdown voltage

V

(BR)DSS

V

= f (TA)

BSS 84 P

-72

V

-68

-66

-64

-62

-60

-58

-56

-54

-60 -20 20 60 100

°C

180

T

A

Rev 2.7 Page 7

2011-07-11

BSS84P

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The information given in this document shall in no event be r e g a r d ed as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information re gar d ing the ap p lic ation of the device, Infineon Technologies hereby d isclaims any and all war r anties and liabilities o f any k ind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. I f they f ail, it is r e as onable to as s ume that the health of the user or other persons may be endangered.

W

Rev 2.7 Page 7

2011-07-11