Datasheet BSS 84 P Datasheet (INFINEON)

DS(on)

D

A

jmax

j

stg

BSS 84 P

SIPMOS Small-Signal-Transistor

Feature

·

P-Channel

·

Enhancement mode

·

Logic Level

·

Avalanche rated

·

dv/dt rated

Type

BSS84P - E6327

BSS84P - L6327

Package

PG-SOT-23

Maximum Ratings, at

T

= 25 °C, unless otherwise specified

Ordering Code

Q67041-S1417

SP000082879

Marking

YBs

Product Summary

V R

I

DS

PG-SOT-23

-60 V 8

-0.17 A

3

1

Gate pin1

Source pin 2

W

2

VPS05161

Drain pin 3

Parameter

Continuous drain current

TA=25°C

=70°C

T

A

Pulsed drain current

TA=25°C

Avalanche energy, single pulse

ID=-0.17 A , VDD=-25V, RGS=25

W

Avalanche energy, periodic limited by T Reverse diode dv/dt

IS=-0.17A, VDS=-48V, di/dt=-200A/µs, T

jmax

=150°C

Gate source voltage V Power dissipation

TA=25°C

Operating and storage temperature

Symbol

I

D

Value Unit

A

-0.17

-0.14

I

D puls

E

AS

E

AR

-0.68

2.6 mJ

0.036

dv/dt -6 kV/µs

V

°C

P

T

GS tot

,

±20

0.36 W

T

-55... +150

IEC climatic category; DIN IEC 68-1 55/150/56

Rev 2.3 Page 1

2005-07-21

Thermal Characteristics

BSS 84 P

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

R

thJS

- - 200 K/W (Pin 3) SMD version, device on PCB:

@ min. footprint @ 6 cm

2

cooling area

1)

R

thJA

-

350 300

Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V

(BR)DSS

-60 - - V

Gate threshold voltage, VGS = V

=-20µA

I

D

Zero gate voltage drain current

VDS=-60V, VGS=0, TA=25°C V

=-60V, VGS=0, TA=125°C

DS

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-4.5V, ID=-0.14A

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

DS(on)

-1 -1.5 -2

-

-0.1

-10

-1

-100

- -10 -100 nA

- 8 12

- 5.8 8

µA

W

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air. Rev 2.3 Page 2

2005-07-21

(plateau)

Inv. diode direct current, pulsed

SD

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

BSS 84 P

Parameter

Symbol Conditions Values Unit

Dynamic Characteristics

Transconductance g

Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge Q Gate to drain charge Q

Gate charge total Q

fs

iss oss

rss d(on) r d(off) f

gs gd

g

min. typ. max.

V

£

2*ID*R

DS

I

=-0.14A

D

VGS=0, VDS=-25V, f=1MHz

DS(on)max

,

0.065 0.13 - S

- 15 19 pF

- 6 8

- 2 3

VDD=-30V, VGS=-4.5V, I

=-0.14A, RG=25

D

W

- 6.7 10 ns

- 16.2 24.3

- 8.6 12.9

- 20.5 30.8

VDD=-48V, ID=-0.17A - 0.25 0.37 nC

- 0.3 0.45

VDD=-48V, ID=-0.17A, V

=0 to -10V

GS

- 1 1.5

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current

I

Inverse diode forward voltage V Reverse recovery time t Reverse recovery charge Q

S

SM

rr

VDD=-48V, ID=-0.17A - -3.42 - V

TA=25°C - - -0.17 A

- - -0.68

VGS=0, IF=-0.17A - -0.93 -1.24 V VR=-30V, I

di

/dt=100A/µs

F

F=lS

,

- 23 34 ns

- 10 15 nC

Rev 2.3 Page 3

2005-07-21

BSS 84 P

1 Power dissipation

P

= f (TA)

tot

BSS 84 P

0.38

W

0.32

0.28

tot

0.24

P

0.2

0.16

0.12

0.08

0.04

0

0 20 40 60 80 100 120

°C

2 Drain current

I

= f (TA)

D

parameter: V

BSS 84 P

-0.18

A

-0.14

-0.12

D

I

-0.1

-0.08

-0.06

-0.04

-0.02

160

T

A

0

0 20 40 60 80 100 120

GS

³

10 V

°C

160

T

A

3 Safe operating area

= f ( VDS )

I

D

parameter : D = 0 , TA = 25 °C

1

BSS 84 P

-10

A

0

-10

o

(

n

-10

I

D

/

S

D

V

=

)

0

D

I

-1

-10

-2

-3

-10

-1

S

D

R

-10

4 Transient thermal impedance

= f (tp)

Z

thJA

parameter : D = tp/T

3

BSS 84 P

10

K/W

2

thJA

Z

10

1

0

-1

10

single pulse

-5

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-4

-3

-2

10

-1

10

10 0 10 1 10

2

t

4

10

s

p

t

= 170.0µs

p

1 ms

10 ms

DC

1

V

DS

-10

2

Rev 2.3 Page 4

2005-07-21

BSS 84 P

5 Typ. output characteristic

I

= f (VDS)

D

parameter: Tj = 25 °C

BSS 84 P

-0.4

P

= 0.36W

tot

A

-0.32

-0.28

D

I

-0.24

-0.2

-0.16

-0.12

-0.08

-0.04

0

0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4

l

j

k

h

i

VGS [V]

g

f

e

d

c

b

a

a -2.5 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 k -8.0 l -10.0

V

DS

6 Typ. drain-source on resistance

R

DS(on)

= f (ID)

parameter: VGS; Tj = 25 °C

BSS 84 P

26

a

GS

-2.5

a

[V] =

b

-3.0

b

c

-3.5

W

22 20 18

DS(on)

16

R

14 12 10

8 6 4

V

2

-5

0

0 -0.04-0.08-0.12-0.16 -0.2 -0.24-0.28-0.32A-0.38

d

-4.0

e

-4.5

c

d

e

f

g

h

i

j

k

l

f

g

h

i

j

k

-5.0

-5.5

-6.0

-6.5

-7.0

l

-8.0

-10.0

I

D

7 Typ. transfer characteristics

= f ( VGS ); |V

I

D

DS

³

2 x |I

|

D

x R

|

DS(on)max

parameter: Tj = 25 °C

0.4

A

0.3

D

0.25

- I

0.2

0.15

0.1

0.05

0

0 1 2 3 4

8 Typ. forward transconductance

= f(ID)

g

fs

parameter: Tj = 25 °C

0.16

S

0.12

fs

0.1

g

0.08

0.06

0.04

0.02

V

- V

6

GS

0

0 0.04 0.08 0.12 0.16

A

0.22

-I

D

Rev 2.3 Page 5

2005-07-21

BSS 84 P

9 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = -0.17 A, VGS = -10 V

BSS 84 P

21

W

18

16

14

DS(on)

R

12

10

8

6

4

2

0

-60 -20 20 60 100

98%

typ

°C

10 Typ. gate threshold voltage

V

parameter: VGS = V

180

T

A

= f (Tj)

GS(th)

DS

2.4

V

2

1.8

GS(th)

- V

1.6

1.4

1.2

1

0.8

0.6

0.4

-60 -20 20 60 100

2%

typ.

98%

°C

160

T

A

11 Typ. capacitances

C = f (V

DS

)

parameter: VGS=0, f=1 MHz

2

10

pF

Ciss

C

1

10

0

10

0 5 10

Coss

Crss

12 Forward character. of reverse diode

= f (VSD)

I

F

parameter: Tj , tp = 80 µs

0

BSS 84 P

-10

A

-1

-10

F

I

-2

-10

Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)

-3

V

- V

20

DS

-10 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4

-3

V

SD

Rev 2.3 Page 6

2005-07-21

BSS 84 P

13 Typ. avalanche energy

E

= f (TA), parameter:

AS

ID = -0.17 A , VDD = -25 V, RGS = 25

3

mJ

2

AS

E

1.5

1

0.5

0

25 45 65 85 105 125

°C

14 Typ. gate charge

V

= f (Q

GS

W

165

T

A

parameter: ID = -0.17 A pulsed; Tj = 25 °C

BSS 84 P

-16

V

-12

GS

-10

V

-8

-6

-4

-2

0

0 0.2 0.4 0.6 0.8 1 1.2

Gate

)

V

0,2

DS max

0,8

V

DS max

nC

Q

1.5

Gate

15 Drain-source breakdown voltage

V

(BR)DSS

V

= f (TA)

BSS 84 P

-72

V

-68

-66

-64

-62

-60

-58

-56

-54

-60 -20 20 60 100

°C

180

T

A

Rev 2.3 Page 7

2005-07-21

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The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BSS 84 P

Rev 2.3 Page 8

2005-07-21