Page 1
SMALL SIGNAL PNP TRANSISTOR
Type Marking
BSS63 T3
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ GENERALPURPOSELOW FREQUENCY
APPLICATONS
■ NPNCOMPLEMENTIS BSS64
BSS63
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collector-Base Voltage (VBE= 0) -110 V
CBO
Collector-Emitter Voltage (IB= 0) -100 V
CEO
Emitter-Base Voltage (IC=0) -6 V
EBO
Collect or Cur rent -0. 1 A
I
C
Collect or P eak Current -0. 2 A
CM
Total Dissipation at Tc=25oC200mW
tot
Stora ge Temperature -65 to 150
stg
Max. Operat i ng Junction Temperatur e 150
T
j
o
C
o
C
March 1996
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Page 2
BSS63
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 15 x15 x 0.7mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junct ion-Subst rate Max
620
500
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CBO
CBO
EBO
Collector Cut-of f
Current (I
E
=0)
Emit ter Cut-o f f Curr ent
=0)
(I
C
∗ Collector- B ase
=-90V
V
CB
V
=-90V Tj=150oC
CB
V
= -5 V -200 nA
EB
I
=-10µA-110V
C
-100
-50
Break dow n V oltage
=0)
(I
E
V
∗ Collector- E mitter
(BR) CEO
I
= -10 mA -100 V
C
Break dow n V oltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-10µA-6V
E
Break dow n V oltage
=0)
(I
C
V
∗ Co llector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Emitt er-Base
BE(sat)
IC=-25mA IB=-2.5mA
=-75mA IB=-7.5mA
I
C
IC=-25mA IB=-2.5mA -0.9 V
-0.25
-0.9
Saturation Voltage
∗ DC Cur rent Gain IC=-10mA VCE=-1V
h
FE
f
C
Tr ansition F r eque nc y IC=-25mA VCE= -5 V f = 100 MHz 50 MHz
T
Collector Base
CB
=-25mA VCE=-1V
I
C
IE=0mA VCB=-10V f=1MHz 3 pF
30
30
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
nA
µA
V
V
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Page 3
SOT-23 MECHANICALDATA
BSS63
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
0044616/B
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BSS63
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor other rights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany - Hong Kong - Italy- Japan- Korea- Malaysia- Malta- Morocco - TheNetherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
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