Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSS61; BSS62
PNP Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 14
Page 2
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
DESCRIPTION
1
2
2
PNP Darlington transistor in a TO-39 metal package.
NPN complements: BSS51 and BSS52.
3
MAM310
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSS61 −−−80 V
BSS62 −−−90 V
V
CES
collector-emitter voltage VBE=0
BSS61 −−−60 V
BSS62 −−−80 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−−1A
total power dissipation T
≤ 25 °C −−0.8 W
amb
T
≤ 25 °C −−5W
case
DC current gain IC= −500 mA; VCE= −10 V 2000 −−
transition frequency IC= −500 mA; VCE= −5 V; f = 100 MHz − 200 − MHz
3
1997 May 14 2
Page 3
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSS61 −−80 V
BSS62 −−90 V
collector-emitter voltage VBE=0
BSS61 −−60 V
BSS62 −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C − 0.8 W
amb
T
≤ 25 °C − 5W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 220 K/W
thermal resistance from junction to case 35 K/W
1997 May 14 3
Page 4
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
CEsat
V
CEsat
V
BEsat
V
BEsat
f
T
Switching times (between 10% and 90% levels)
t
on
t
off
collector cut-off current
BSS61 V
BSS62 V
= 0; VCE= −60 V −−−50 nA
BE
= 0; VCE= −80 V −−−50 nA
BE
emitter cut-off current IC= 0; VEB= −4V −−−100 nA
DC current gain IC= −150 mA; VCE= −10 V 1000 −−
I
=−500 mA; VCE= −10 V 2000 −−
C
collector-emitter saturation voltage IC= −500 mA; IB= −0.5 mA −−−1.3 V
I
= −500 mA; IB= −0.5 mA; Tj= 200 °C −−−1.3 V
C
collector-emitter saturation voltage
BSS61 I
= −1 A; IB= −1mA −−−1.6 V
C
I
= −1 A; IB= −1 mA; Tj= 200 °C −−−1.6 V
C
collector-emitter saturation voltage
BSS62 I
= −1 A; IB= −4mA −−−1.6 V
C
= −1 A; IB= −4 mA; Tj= 200 °C −−−1.6 V
I
C
base-emitter saturation voltage IC= −500 mA; IB= −0.5 mA −−−1.9 V
base-emitter saturation voltage
BSS61 I
BSS62 I
= −1 A; IB= −1mA −−−2.2 V
C
= −1 A; IB= −4mA −−−2.2 V
C
transition frequency IC= −500 mA; VCE= −5 V; f = 100 MHz − 200 − MHz
turn-on time I
turn-off time I
= −500 mA; I
Con
I
= 0.5 mA
Boff
= −1 A; I
I
Con
= −500 mA; I
Con
I
= 0.5 mA
Boff
= −1 A; I
I
Con
Bon
= −1 mA; I
Bon
Bon
= −1 mA; I
Bon
= −0.5 mA;
Boff
= −0.5 mA;
Boff
− 0.5 −µs
=1mA − 0.4 −µs
− 0.7 −µs
=1mA − 1.5 −µs
1997 May 14 4
Page 5
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads SOT5/11
j
B
α
1
k
2
D
1
seating plane
w
M MBM
A
b
3
a
A
D
0 5 10 mm
A L
scale
DIMENSIONS (mm are the original dimensions)
UNIT a b D D1jkLw
A
6.60
mm
6.35
OUTLINE
VERSION
SOT5/11 TO-39
5.08
0.48
9.39
8.33
0.41
9.08
IEC JEDEC EIAJ
8.18
0.85
0.75
0.95
14.2
0.75
12.7
REFERENCES
0.2
α
°
45
1997 May 14 5
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
Page 6
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 14 6
Page 7
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
NOTES
1997 May 14 7
Page 8
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 14 Document order number: 9397 750 02315
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