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®
■ STMicroelectronics P REF ERRED
SALESTYPE
■ PNP TRANSIS T OR
DESCRIPTION
The BSS44 is a silicon epitaxial planar PNP
transistor in Jedec TO-39 metal case. It is used
for high-current switching and power applications
up to 5 A.
BSS44
SILICON PNP TRANSISTOR
TO-39
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) - 65 V
CBO
Collector-Emitter Voltage (IB = 0) - 60 V
CEO
Emitter-Base Voltage (IC = 0) - 6 V
EBO
Collector Current - 5 A
I
C
Total Dissipation at T
tot
T
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
case
amb
≤ 25 oC
≤ 25 oC
5
0.87
W
W
o
C
o
C
November 1998
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BSS44
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
V
(BR)CBO
Collector Cut-off
Current (V
∗
Collector-base
BE
=0)
= -60 V -0.5 µA
V
CE
= -1 mA -65 V
I
C
Breakdown Voltage
(I
= 0)
E
∗
V
CEO(sus)
Collector-Emitter
= -50 mA -60 V
I
C
Sustaining Voltage
(I
= 0)
B
∗
V
V
CE(sat)
EBO
Emitter-base Voltage
(I
= 0)
C
∗
Collector-Emitter
Saturation Voltage
BE(sat)
∗
Base-Emitter
V
Saturation Voltage
∗
C
h
FE
f
CBO
DC Current Gain IC = -0.5 A VCE = -2 V
∗
Transition Frequency IC = -0.5 A VCE = -5 V 80 MHz
T
Collector-base
Capacitance
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Turn-on Time IC = -0.5 A VCC = -20 V
on
Turn-off Time 0.45 µs
off
=.- 1 mA -6 V
I
E
IC = -0.5 A IB = -50 mA
I
= - 5 A IB = -0.5 A
C
IC = -0.5 A IB = -50 mA
I
= - 5 A IB = -0.5 A
C
-0.1
-0.4 -1
-0.8
-1. 1 -1.6
30
I
= -2 A VCE = -2 V
C
I
= -5 A VCE = -2 V
C
IE = 0 VCB = 10 V
40 70
45
100 pF
f = 1 MHz
0.065 µs
I
= -I
B1
= -50 mA
B2
V
V
V
V
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TO-39 MECHANICAL DATA
BSS44
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
mm inch
o
(typ.)
H
G
D A
I
E
F
L
B
P008B
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BSS44
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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