Datasheet BSS 169 SMD Datasheet

BSS169

SIPMOS® Small-Signal-Transistor

Features

• N-channel

• Depletion mode

Product Summary

V

DS

R

DS(on),max

I

DSS,min

100 V

12

0.09 A

• dv/dt rated

• Available with V

indicator on reel

GS(th)

• Pb-free lead-plating; RoHS compliant

PG-SOT-23

Type Package Pb-free Tape and Reel Information Marking

BSS169 PG-SOT-23 Yes L6327: 3000 pcs/reel SFs

Ω

BSS169 PG-SOT-23 Yes

Maximum ratings, at T

=25 °C, unless otherwise specified

j

L6906: 3000 pcs/reel sorted in V

GS(th)

Parameter Symbol Conditions Unit

T

Continuous drain current

Pulsed drain current

I

D

I

D,pulse

Reverse diode dv /dt dv/dt

Gate source voltage

V

GS

=25 °C

A

T

=70 °C

A

T

=25 °C

A

=0.17 A, V

I

D

DS

di/dt=200 A/µs,

T

=150 °C

j,max

=80 V,

ESD sensitivity (HBM) as per MIL-STD 883

T

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

stg

=25 °C

A

1)

bands

SFs

Value

0.17 A

0.14

0.68

6 kV/µs

±20 V

Class 0

0.36 W

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

1)

see table on next page and diagram 11

Rev. 1.6 page 1 2007-01-18

BSS169

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - ambient

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 350 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cutoff current

V

(BR)DSSVGS

V

GS(th)

I

D(off)

=-10 V, I

VDS=3 V, I

V

=100 V,

DS

V

=-10 V, T

GS

V

=100 V,

DS

V

=-10 V, T

GS

=250 µA

D

=50 µA

D

=25 °C

j

=125 °C

j

100 - - V

-2.9 -2.2 -1.8

- - 0.1 µA

--10

Gate-source leakage current

On-state drain current

Drain-source on-state resistance

Transconductance

Threshold voltage V

sorted in bands

GS(th)

J

I

GSS

I

DSS

R

DS(on)VGS

g

fs

V

GS(th)

VGS=20 V, V VGS=0 V, V

V

|VDS|>2|ID|R I

D

2)

VDS=3 V, I

=0 V, I =10 V, I

GS

=0.14 A

=0 V

DS

=10 V

DS

=0.05 A

D

=0.17 A

D

DS(on)max

=50 µA

D

- - 10 nA

90 - - mA

- 5.3 12

- 2.9 6

,

0.10 0.19 - S

-2 - -1.8 V

K -2.15 - -1.95

L -2.3 - -2.1

M -2.45 - -2.25

N -2.6 - -2.4

2)

Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Ω

Rev. 1.6 page 2 2007-01-18

BSS169

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C C

C

t t t t

iss

oss

rss

d(on)

r

d(off)

f

=-10 V, V

V

GS

f=1 MHz

V

=50 V,

DD

V

=-3…7 V,

GS

=0.12 A, R

I

D

DS

=6 Ω

G

=25 V,

-5168pF

-913

-47

- 2.9 4.2 ns

- 2.7 4.0

-1117

-2740

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

DD

V

GS

=80 V, I

=-3 to 7 V

=0.12 A,

D

- 0.12 0.16 nC

- 0.9 1.4

- 2.1 2.8

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

- -0.43 - V

- - 0.17 A

=25 °C

T

A

- - 0.68

VGS=-10 V, I T

=25 °C

j

V

=50 V, I

R

di

/dt=100 A/µs

rr

F

=0.17 A,

F

=0.12 A,

F

- 0.79 1.2 V

- 20.5 25.6 ns

- 9.7 12.1 nC

Rev. 1.6 page 3 2007-01-18

1 Power dissipation 2 Drain current

P

=f(TA) ID=f(TA); V

tot

GS

≥10 V

BSS169

0.4

0.2

0.16

0.3

0.12

[W]

0.2

tot

P

[A]

D

I

0.08

0.1

0.04

0

0 40 80 120 160

TA [°C]

0

0 40 80 120 160

TA [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TA=25 °C; D=0 Z

D

parameter: t

10

p

1

=f(t

thJA

)

p

parameter: D=tp/T

3

10

limited by on-state

[A]

D

I

10

0

-1

-2

-3

resistance

0

10

10 µs

100 µs

1 ms

10 ms

DC

1

10

2

10

[K/W]

thJA

Z

3

VDS [V]

10

0.5

2

0.2

0.1

0.05

0.02

1

0

10

single pulse

0.01

2

1

0

-1

-2

-3

-4

10

tp [s]

Rev. 1.6 page 4 2007-01-18

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

=f(ID); T

DS(on)

parameter: V

=25 °C

j

GS

BSS169

0.5

0.4

V 1

14

V 10

12

V 0.5

-0.2 V

0 V

-0.1 V

0.2 V

0.1 V

10

[A]

D

I

0.3

0.2

V 0.2

V 0.1

V 0

V 0.1-

V 0.2-

]

Ω

[

R

8

DS(on)

6

4

0.1 2

0

0246810

VDS [V]

0

0 0.1 0.2 0.3 0.4 0.5

ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

DS(on)max

gfs=f(ID); T

=25 °C

j

0.5 V

1 V

10 V

0.5

0.4

0.35

0.4

0.3

0.25

[S]

fs

g

0.15

0.2

[A]

D

I

0.3

0.2

0.1

0.05

0

-2 -1 0 1 2

VGS [V]

0

0.00 0.10 0.20 0.30 0.40 0.50

ID [A]

Rev. 1.6 page 5 2007-01-18

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=0.05 A; VGS=0 V V

DS(on)

=f(Tj); VDS=3 V; I

GS(th)

parameter: I

=50 µA

D

BSS169

24

20

16

]

Ω

[

R

DS(on)

12

%98

8

typ

4

0

-60 -20 20 60 100 140 180

-1.1

-1.5

-1.9

[V]

-2.3

GS(th)

V

-2.7

-3.1

-3.5

-60 -20 20 60 100 140 180

Tj [°C]

11 Threshold voltage bands 12 Typ. capacitances

I

=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-10 V; f=1 MHz

D

%98

typ

%2

Tj [°C]

10

1

[mA]

D

I

J

KLMN

0.1

0.01

-3 -2.5 -2 -1.5 -1

VGS [V]

50 µA

3

10

2

10

Ciss

C [pF]

10

1

0

Coss

Crss

0102030

VDS [V]

Rev. 1.6 page 6 2007-01-18

13 Forward characteristics of reverse diode 15 Typ. gate charge

I

=f(VSD) VGS=f(Q

F

parameter: T

0

10

-1

10

j

150 °C

25 °C

150 °C, 98%

25 °C, 98%

parameter: V

); I

=0.12 A pulsed

gate

D

DD

8

6

4

BSS169

0.5 VDS(max)

0.2 VDS(max)

0.8 VDS(max)

-2

10

[A]

F

I

-3

10

-4

10

0 0.5 1 1.5

[V]

V

SD

16 Drain-source breakdown voltage

V

BR(DSS)

120

=f(Tj); I

=250 µA

D

[V]

2

GS

V

0

-2

-4 0 0.5 1 1.5 2 2.5

Q

[nC]

gate

[V]

100

BR(DSS)

V

80

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.6 page 7 2007-01-18

Package Outline:

BSS169

Footprint: Packaging:

Dimensions in mm

Rev. 1.6 page 8 2007-01-18

BSS169

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office.

Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.6 page 9 2007-01-18