Datasheet BSS 139 SMD Datasheet

BSS139

)

SIPMOS® Small-Signal-Transistor

Features

• N-channel

• Depletion mode

Product Summary

V

DS

R

DS(on),max

I

DSS,min

250 V

30

0.03 A

• dv /dt rated

• Available with V

indicator on reel

GS(th)

• Pb-free lead-plating; RoHS compliant

PG-SOT-23

Type Package Tape and Reel Information Marking Pb-free

BSS139 PG-SOT-23 L6327: 3000 pcs/reel STs Yes

Ω

BSS139 PG-SOT-23

Maximum ratings, at T

L6906: 3000 pcs/reel sorted in V

=25 °C, unless otherwise specified

j

GS(th

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

I

D

I

D,pulse

Reverse diode dv /dt dv /dt

Gate source voltage

V

GS

TA=25 °C

T

=70 °C

A

TA=25 °C

I

=0.1 A,VDS=200 V,

D

di /dt =200 A/µs,

T

=150 °C

j,max

ESD sensitivity (HBM) as per
MIL-STD 883

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

TA=25 °C

stg

bands

1)

STs Yes

Value

0.10 A

0.08

0.4

±20 V

Class 1

0.36 W

-55 ... 150 °C

6 kV/µs

IEC climatic category; DIN IEC 68-1 55/150/56

1)

see table on next page and diagram 11

Rev. 1.62 page 1 2006-11-27

BSS139

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - ambient

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 350 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cutoff current

V

(BR)DSSVGS

V

GS(th)

I

D(off)

=-3 V, ID=250 µA

VDS=3 V, ID=56 µA

VDS=250 V,
V

=-3 V, Tj=25 °C

GS

V

=250 V,

DS

V

=-3 V, Tj=125 °C

GS

250 - - V

-2.1 -1.4 -1

- - 0.1 µA

--10

Gate-source leakage current

On-state drain current

Drain-source on-state resistance

Transconductance

Threshold voltage V

sorted in bands

GS(th)

J

I

GSS

I

DSS

R

DS(on)VGS

g

fs

V

GS(th)

VGS=20 V, VDS=0 V

VGS=0 V, VDS=10 V

=0 V, ID=15 mA

=10 V,ID=0.1 mA

V

GS

|VDS|>2|ID|R

I

=0.08 A

D

2)

VDS=3 V, ID=56 µA

DS(on)max

- - 10 nA

30 - - mA

- 12.5 30

- 7.8 14

,

0.060 0.13 - S

-1.2 - -1 V

K -1.35 - -1.15

L -1.5 - -1.3

M -1.65 - -1.45

N -1.8 - -1.6

2)

Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Ω

Rev. 1.62 page 2 2006-11-27

BSS139

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

=-3 V, VDS=25 V,

V

GS

f =1 MHz

VDD=125 V,
V

=-3...5 V,

GS

=0.04 A, RG=6 Ω

I

D

-6076pF

- 6.7 8.4

- 2.6 3.3

- 5.8 8.7 ns

- 5.4 8.1

-2943

- 182 273

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q

Q

Q

V

gs

gd

g

plateau

=200 V,

V

DD

I

=0.04 A,

D

V

=-3 to 5 V

GS

- 0.14 0.21 nC

- 1.3 2.0

- 2.3 3.5

- -0.28 - V

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

I

S

I

S,pulse

V

SD

t

rr

Q

=25 °C

T

A

- - 0.4

- - 0.10 A

VGS=-3 V, IF=0.1 A,
T

=25 °C

j

V

=50 V, IF=0.04 A,

R

di

/dt =100 A/µs

rr

F

- 0.81 1.2 V

- 8.6 12.9 ns

- 2.1 3.1 nC

Rev. 1.62 page 3 2006-11-27

1 Power dissipation 2 Drain current

P

=f(TA) ID=f(TA); VGS≥10 V

tot

BSS139

0.4

0.12

0.3

0.08

[W]

0.2

tot

P

[A]

D

I

0.04

0.1

0

0 40 80 120 160

TA [°C]

0

0 40 80 120 160

TA [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TA=25 °C; D =0 Z

D

parameter: t

10

0

p

limited by on-state
resistance

10 µs

100 µs

=f(tp)

thJA

parameter: D =tp/T

3

10

10

1 ms

10 ms

DC

2

10

0.5

2

10

0.2

10

10

0.1

0.05

1

0.02
single pulse

0.01

0

2

1

0

-1

-2

-3

10

-4

10

10

10

10

10

10

[K/W]

thJA

Z

3

tp [s]

[A]

D

I

10

10

10

10

-1

-2

-3

-4

10

0

10

1

VDS [V]

Rev. 1.62 page 4 2006-11-27

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

=f(ID); Tj=25 °C

DS(on)

parameter: V

GS

BSS139

0.2

V 10

V 1

30

-0.2 V

-0.1 V

0 V

0.2 V

0.1 V

0.16

V 0.5

0.12

[A]

D

I

0.08

0.04

V 0.1

V 0.1-

V 0.2-

0

0246810

VDS [V]

V 0.2

V 0

20

]

Ω

[

DS(on)

R

10

0

0 0.04 0.08 0.12 0.16

ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

DS(on)max

gfs=f(ID); Tj=25 °C

0.5 V

1 V

10 V

0.3

0.25

0.25

0.2

0.2

25 °C

[A]

I

D

-55 °C

0.15

150 °C

0.15

[S]

fs

g

0.1

0.1

0.05

0

-2 -1 0 1

VGS [V]

0.05

0

0.00 0.05 0.10 0.15 0.20

ID [A]

Rev. 1.62 page 5 2006-11-27

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=0.015 A; VGS=0 V V

DS(on)

=f(Tj); VDS=3 V; ID=56 µA

GS(th)

parameter: I

D

BSS139

60

50

40

]

Ω

[

%98

30

DS(on)

R

20

typ

10

0

-60 -20 20 60 100 140 180

0

-0.5

-1

[V]

-1.5

GS(th)

V

-2

-2.5

-3

-60 -20 20 60 100 140 180

Tj [°C]

11 Threshold voltage bands 12 Typ. capacitances

I

=f(VGS); VDS=3 V; Tj=25 °C C =f(VDS); VGS=-3 V; f =1 MHz

D

%98

typ

%2

Tj [°C]

10

1

[mA]

D

I

0.1

M

N

K

L

J

0.01

-2 -1.5 -1 -0.5

VGS [V]

56 µA

1000

100

Ciss

C [pF]

10

Coss

Crss

1

0 5 10 15 20 25 30

VDS [V]

Rev. 1.62 page 6 2006-11-27

13 Forward characteristics of reverse diode 15 Typ. gate charge

I

=f(VSD) VGS=f(Q

F

parameter: T

j

parameter: V

); ID=0.1 A pulsed

gate

DD

BSS139

1

150 °C, 98%

0.1

150 °C

[A]

F

I

0.01

0.001

0 0.4 0.8 1.2 1.6

25 °C

VSD [V]

16 Drain-source breakdown voltage

V

=f(Tj); ID=250 µA

BR(DSS)

25 °C, 98%

8

6

4

[V]

2

GS

V

0

-2

-4

0123

0.2 VDS(max)

Q

gate

0.5 VDS(max)

0.8 VDS(max)

[nC]

300

280

[V]

260

BR(DSS)

V

240

220

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.62 page 7 2006-11-27

Package Outline:

BSS139

Footprint: Packaging:

Dimensions in mm

Rev. 1.62 page 8 2006-11-27

BSS139

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© Infineon Technologies AG 1999
All Rights Reserved.

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For information on the types in question, please contact your nearest Infineon Technologies office.

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Rev. 1.62 page 9 2006-11-27