
Document number: DS35476 Rev. 7 - 2
This new generation uses advanced planar technology MOSFET,
K28 = Product Type Marking Code
YM =
Y = Year (ex:
M = Month (ex: 9 = September)
K29 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex:
M = Month (ex: 9 = September)
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
BV
R
DSS
600V
160Ω @ V
DS(ON)
GS
= 10V
Package
Description
provide excellent high voltage and fast switchi
small-signal and level shift applications.
Applications
• Motor Control
• Backlighting
• DC-DC Converters
• Power Management Functions
D
70mA
Features
• Low Input Capacitance
• High BV
• Low Input/Output Leakage
• Totally Lead-Free & Full y RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards fo r High Reliabili ty
Rating for Power Application
DSS
Mechanical Data
• Case: SC59 / SOT23
• Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Notes: 1. No purposely added lead. Fully EU Directive 2002/ 95/E C (Ro H S) & 20 11/ 6 5/ EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
Date Code Key
D = 2016)
Date Code Marking
D = 2016)
© Diodes Incorporated

Document number: DS35476 Rev. 7 - 2
Pulsed Drain Current @ TSP = +25°C (Note 7)
Power Dissipation, @TA = +25°C (Note 5)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
Power Dissipation, @TA = +25°C (Note 6)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
ON CHARACTERISTICS (Note 8)
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 9)
Reverse Transfer Capacitance
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 5) VGS = 5V
Continuous Drain Current (Note 6) VGS = 5V
Thermal Characteristics
Electrical Characteristics (@T
Steady
TA = +25°C
Steady
State
= +25°C, unless otherwise specified.)
A
ID
ID
ID
ID
70
65
50
mA
mA
mA
mA
Static Drain-Source On-Resistance
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
R
DS(ON)
Ω
pF
nC
= 25V, V
V
DS
= 10V, VDD = 300V,
V
GS
= 0.01A
I
D
GS
= 0V, f = 1.0MHz
VDD = 300V, VGS = 10V,
= 6Ω,
R
GEN
= 10mA
I
D
VR =300V, IF =0.016A,
© Diodes Incorporated

Document number: DS35476 Rev. 7 - 2
V , DRAIN -SOURCE VOLTAGE(V)
Figure 1 Typical Output Characteristics
DS
0 2 4 6 8 10
I , DRAIN CURRENT
D
0.030
0.025
0.020
0.015
0.010
0.005
0.000
V , GATE SOURCE VOLTAGE(V)
Figure 2 Typical Transfer Characteristics
GS
I , DRAIN CURRENT (mA)
D
1
10
100
1 2 3 4 5
V = 10V
DS
I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Tempera ture
D
R ,DRAIN-SOURCE ON-RESISTANCE( )
DS(ON)
Ω
10
100
1000
0 5 10 15 20 25 30
T =-55 C
A
°
T =25A°
C
T =85
A
°
C
T =125
A
°
C
T =150
A
°
C
V = 10V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 4 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE
(Normalized)
DS(ON)
0
50
100
150
200
250
I ,
SOURCE CURRENT (A)
S
V , SOURCE-DRAIN VOLTAGE (V)
Figure 6 Diode Forw ard Voltage vs. Current
SD
0.1 0.3 0.5 0.7 0.9 1.1
100
T = 25 C
A
°
T = 125 C
A
°
T = 150 C
A
°
T = -55 C
A
°
T = 85 C
A
°
10
1
D
4.8
4.6
, GATE THRESHOLD VOLTAGE (V)
GS(TH)
V
4.4
4.2
4
3.8
3.6
3.4
3.2
3
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (℃)
Figure 5. Gate Threshold Variation vs. Ambient
Temperature
ID = 250μA
© Diodes Incorporated

Document number: DS35476 Rev. 7 - 2
0
100
200
300
400
500
0 0.005 0.01 0.015 0.02 0.025
V , GATE-SOURCE VOLTAGE (V)
Figure 7 Typical On-Resistance vs. Drain Current and Gate Voltage
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
20
40
60
80
100
120
140
160
180
200
2 3 4 5 6 7 8 9 10
V , GATE-SOURCE VOLTAGE (V)
Figure 8 Typical Tr ansfer Cha racteristic
GS
R ( ) Ave @ I = 20mA
DS(ON) D
Ω
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Jun c t io n C apa c itan ce
C , CAPACITANCE (pF)
T
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40
f = 1MHz
C
ISS
C
OSS
C
RSS
Q - (nC)
G
Figure 10 Gate Charge Characte ristics
V (V)
GS
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V =25V, I =250mA
DS D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t)=r(t) * R
R =164C/W
Duty Cycle, D=t1/ t2
θθ
θ
JA JA
JA
θJA
= 164oC/W
θJA
Cycle , D = t1/t2
θJA
© Diodes Incorporated

Document number: DS35476 Rev. 7 - 2
J
K1
K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
C
B
D
G
F
a
SC59
SOT23
3.4 X 0.8 Y 1.0 C 2.4 E 1.35
Package Outline Dimensi on s
Please see http://www.diodes.com/package-outlines.html for the latest version.
SC59
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html f or the latest version.
SC59
© Diodes Incorporated

Document number: DS35476 Rev. 7 - 2
Suggested Pad Layout (cont.)
Please see http://www.diodes.com/package-outlines.html f or the latest version.
SOT23
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