Datasheet BSS123N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

N-CHANNEL MOSFET

Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 1/7

BVDSS 100V

BSS123N3

Description

The BSS123N3 is a N-channel enhancement-mode MOSFET.

Features

• Low on-resistance

• High speed switching

• Low-voltage drive(2.5V)

• Easily designed drive circuits

• Pb-free package

Symbol Outline

BSS123N3 SOT-23

ID 1.7A
RDSON(max)

450mΩ

D

G：Gate
S：Source
D：Drain

G

S

Absolute Maximum Ratings

Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage

Drain Current

Total Power Dissipation
Channel Temperature
Storage Temperature

Continuous ID
Pulsed I

(Ta=25°C)

VGSS

DP

P

D

TCH

Tstg

±20 V

1.7 A

6.8 *1 A

1.38 *2 W
+150

-55~+150

°C
°C

Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.

BSS123N3 CYStek Product Specification

Spec. No. : C580N3

CYStech Electronics Corp.

Issued Date : 2011.09.16
Revised Date :
Page No. : 2/7

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance, Junction-to-Ambient Rth,ja 90

°C/W

Note : Surface mounted on 1 in² copper pad of FR-4 board, 350°C/W when mounted on minimum copper pad.

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV

V

R

Dynamic

td

td

Source-Drain Diode

*VSD - - 1.2 V VGS=0V, ISD=1A

100 - - V VGS=0, ID=10μA

DSS*

1 - 2.5 V VDS=VGS, ID=250μA

GS(th)

I

- - ±100 nA VGS=±20V, VDS=0

GSS

I

- - 1 μA VDS=100V, VGS=0

DSS

- 290 400 ID=700mA, VGS=10V

DS(ON)*

- 310 450 ID=400mA, VGS=4V

- 260 400 ID=170mA, VGS=10V

- 280 400

mΩ

ID=170mA, VGS=4V

GFS 0.08 1 - S VDS=10V, ID=170mA

C

- 512 -

iss

C

- 15 -

oss

C

- 11 -

rss

- 3.1 -

(ON)

tr - 1.2 -

- 9.7 -

(OFF)

pF VDS=25V, VGS=0, f=1MHz

ns

VDD=30V, ID=1.7A, VGS=10V, R

tf - 1.4 -

Qg - 3.6 -

Qgs - 1.8 -

nC VDD=30V, ID=1.7A, VGS=10V

Qgd - 0.6 -

*IS - - 1.7

*ISM - - 6.8

A

*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

GEN

=6Ω

Ordering Information

Device Package Shipping Marking

BSS123N3

SOT-23

(Pb-free)

3000 pcs / Tape & Reel SA

BSS123N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics

Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 3/7

Typical Output Characteristics

8

10V

7

8V
7V

6

6V

4.5V

5

4V

4

3.5V

3

Drain Current - ID(A)

2

1

0

0123456

Drain-Source Voltage -VDS(V)

VGS= 3V

Breakdown Voltage -BVDSS(V)

Breakdown Voltage vs Junction Temperature

140

ID=250μA

130

120

110

100

-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature-Tj(°C)

Static Drain-Source On-State

10000

1000

Resistance-RDS(on)(mΩ)

Static Drain-Source On-State resistance vs Drain Current

VGS= 3V

VGS= 2. 5V

VGS= 4. 5V

VGS= 10V

1.2

0.8

0.6

0.4

Source-Drain Voltage-VSD(V)

Reverse Drain Current vs Source-Drain Voltage

1

Tj=25°C

Tj=150°C

100

0.001 0.01 0.1 1
Drain Current-ID(A)

0.2
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Reverse Drain Current -IDR(A)

Static Drain-Source On-State Resistance vs Gate-Source

Volta ge

1000

900

800

700

600

500

400

300

Resistance-RDS(ON)(mΩ)

Static Drain-Source On-State

200

100

0

024681

Gate-Source Voltage-VGS(V)

ID=700mA

ID=400mA

Static Drain-Source On-State

0

Drain-Source On-State Resistance vs Junction Tempearture

700
650
600
550
500
450
400
350
300
250

Resistance-RDS(ON)(mΩ)

200
150
100

VGS=10V, ID=700mA

VGS= 4V, ID=400mA

VGS=10V, ID=170mA

-60 -20 20 60 100 140 180
Junction Temperature-Tj(°C)

BSS123N3 CYStek Product Specification

CYStech Electronics Corp.

S

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

1000

2.4

Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 4/7

Threshold Voltage vs Junction Tempearture

Ciss

2.2

2

ID=250uA

1.8

100

Capacitance---(pF)

C

oss

Crss

10

0 5 10 15 20 25 30 35

Drain-Source Voltage -VDS(V)

1.6

1.4

Threshold Voltage-VGS(th)(V)

1.2

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

Junction Temperature-Tj(°C)

Gate Charge Characteristics

12

V

=30V

10

(V)

GS

8

D

VDS=50V

VDS=70V

6

4

2

Gate-Source Voltage---V

ID=1.7A

0

01234

5

Total Gate Charge---Qg(nC)

8

7

6

5

4

3

Drain Current -ID(A)

2

1

0

Typical Transfer Characteristics

VDS= 5V

0510

Gate-Source Voltage-VGS(V)

15

Power Derating Curve

mounted on a 1 in² FR
board with 2 oz . copper

10

RDS(ON) limited

1

Maximum Safe Operating Area

100μs

1ms

10ms

1.60

1.40

1.20

1.00

0.80

0.1

Drain Current --- ID(A)

Ta=25°C, Single pulse,
mounted on a 1 in² FR-4

boad with 2 oz. copper.

θ

=90°C/W

R

JA

0.01

0.1 1 10 100 1000
Drain-Source Voltage -VDS(V)

100ms

DC

0.60

0.40

Power Dissipation---PD(W)

0.20

0.00
0 50 100 150 200

Ambient Temperature---TA(℃)

BSS123N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 5/7

Carrier Tape Dimension

BSS123N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices

Recommended temperature profile for IR reflow

260 +0/-5 °C

Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 6/7

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

BSS123N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 7/7

A

L

3

S

B

1

2

Marking:

Device
Code

SA

□□

Date Code

G

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

H

Inches Millimeters Inches Millimeters

K

J

DIM

Style : Pin 1.Gate 2.Source 3.Drain

*:Typical

Min. Max. Min. Max.

C

DIM

V

D

Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0035 0.0071 0.09 0.18
B 0.0472 0.0669 1.20 1.70 K 0.0276 REF 0.70 REF
C 0.0335 0.0512 0.89 1.30 L 0.0374* 0.95*
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0004 0.0040 0.01 0.10

Notes : 1.Controlling dimension : millimeters.

Material :

• Lead : Pure tin plated.

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BSS123N3 CYStek Product Specification