Page 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS123LT1/D
N–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous
Pulsed
(1)
(2)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(3)
DEVICE MARKING
BSS123L T1 = SA
V
V
I
R
DSS
GS
GSM
I
D
DM
P
D
q
JA
stg
3 DRAIN
1
GATE
2 SOURCE
100 Vdc
±20
±40
0.17
0.68
225
1.8
556 °C/W
–55 to +150 °C
mW/°C
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 21
SOT–23 (TO–236AB)
Vdc
Vpk
Adc
mW
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0 0.75 0.062 in.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
TJ = 125°C
(4)
V
(BR)DSS
I
I
V
GS(th)
r
DS(on)
DSS
GSS
g
fs
100 — — Vdc
—
—
— — 50 nAdc
0.8 — 2.8 Vdc
— 5.0 6.0 Ω
80 — — mmhos
—
—
15
60
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
Page 2
BSS123LT1
(
CC
,
C
,
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted) (Continued)
A
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Time
(4)
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 Ω)
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
4 V
3 V
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
1.0
VDS = 10 V
0.8
0.6
0.4
, DRAIN CURRENT (AMPS)
D
I
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
— 20 — pF
— 9.0 — pF
— 4.0 — pF
— 20 — ns
— 40 — ns
— — 1.3 V
–55°C
VGS, GATE SOURCE VOLTAGE (VOLTS)
25°C
125°C
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Figure 1. Ohmic Region
2.4
2.2
VGS = 10 V
2.0
ID = 200 mA
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STA TIC DRAIN–SOURCE ON–RESISTANCE
0.6
0.4
DS(on)
r
–60 –20 +20 +60 +100 + 140 –60 –20 + 20 +60 +100 +140
°
T, TEMPERA TURE (
C)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
, THRESHOLD VOLTAGE (NORMALIZED)
0.75
GS(th)
V
0.7
Figure 3. T emperature versus Static
Drain–Source On–Resistance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. Transfer Characteristics
VDS = V
ID = 1.0 mA
T, TEMPERA TURE (°C)
Figure 4. T emperature versus Gate
Threshold V oltage
GS
Page 3
BSS123LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.035
0.9
SOT–23 POWER DISSIP ATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
, the maximum rated junction temperature of the
J(max)
, the thermal resistance from the device junction to
θJA
PD =
T
PD =
150°C – 25°C
556°C/W
J(max)
R
θJA
– T
A
= 225 milliwatts
0.031
0.8
SOT–23
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
inches
mm
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
Page 4
BSS123LT1
P ACKAGE DIMENSIONS
A
L
3
S
1
B
2
GV
C
D
H
K
J
CASE 318–08
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
2. SOURCE
3. DRAIN
MILLIMETERS
INCHES
DIMAMIN MAX MIN MAX
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60
STYLE 21:
PIN 1. GATE
ISSUE AE
SOT–23 (TO–236AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Mfax is a trademark of Motorola, Inc.
BSS123LT1/D
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