Datasheet BSS100, BSS123 Datasheet (Fairchild Semiconductor)

September 1996

BSS100 / BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance. This product is particularly suited to low
voltage, low current applications, such as small servo
motor controls, power MOSFET gate drivers, and other
switching applications.

_______________________________________________________________________________

BSS100: 0.22A, 100V. R
BSS123: 0.17A, 100V. R

DS(ON)
DS(ON)

= 6Ω @ V
= 6Ω @ V

GS
GS

High density cell design for extremely low R
Voltage controlled small signal switch.
Rugged and reliable.

D

= 10V.
= 10V

DS(ON)

.

G

BSS100

Absolute Maximum Ratings T

BSS123

= 25°C unless otherwise noted

A

S

Symbol Parameter BSS100 BSS123 Units

V

DSS

V

DGR

V

GSS

I

D

Drain-Source Voltage 100 V
Drain-Gate Voltage (RGS < 20KΩ)

100 V

Gate-Source Voltage - Continuous ± 14 V

- Non Repetitive (TP < 50 µS)

± 20

Drain Current - Continuous 0.22 0.17 A

- Pulsed 0.9 0.68
P
TJ,T
T

D

L

Total Power Dissipation @ TA = 25°C 0.63 0.36 W
Operating and Storage Temperature Range -55 to 150 °C

STG

Maximum Lead Temperature for Soldering

300 °C

Purposes, 1/16" from Case for 10 Seconds

THERMAL CHARACTERISTICS

R

JA

θ

Thermal Resistacne, Junction-to-Ambient 200 350 °C/W

© 1997 Fairchild Semiconductor Corporation

BSS100 Rev. F1 / BSS123 Rev. F1

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV
I

DSS

I

GSSF

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA All 100 V
Zero Gate Voltage Drain Current VDS = 100 V, V

VDS = 100 V, V
VDS = 100 V, V
VDS = 60 V, V
VDS = 20 V, V

= 0 V

GS

= 0 V

GS

= 0 V TJ=125oC All 60 µA

GS

= 0 V

GS

= 0 V

GS

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V

VGS = 20 V, VDS = 0 V

BSS100
BSS123

BSS100
BSS123
BSS100
BSS123

15 µA

1 µA

10 nA
10 nA
10 nA
50 nA

ON CHARACTERISTICS (Note 1)

V
R

g

GS(th)

DS(ON)

FS

Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 1.4 2 V
Static Drain-Source On-Resistance VGS = 10 V, ID = 0.22 A

VGS = 10 V, ID = 0.17 A
VGS = 4.5 V, ID = 0.22 A
VGS = 4.5 V, ID = 0.17 A

Forward Transconductance VDS = 10 V, ID = 0.22 A

VDS = 10 V, ID = 0.17 A

BSS100
BSS123
BSS100
BSS123
BSS100
BSS123

2.8 6

2.8 6

3.2 10

3.2 10

0.08 0.4 S

0.08 0.4

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance All 10 15 pF

f = 1.0 MHz

All 29 60 pF

Reverse Transfer Capacitance All 2 6 pF

SWITCHING CHARACTERISTICS (Note 1)

t
t
t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = 30 V, ID = 0.28 A,
Turn - On Rise Time All 8 ns

VGS = 10 V, R

GEN

= 50 Ω

All 8 ns

Turn - Off Delay Time All 13 ns
Turn - Off Fall Time All 16 ns
Totall Gate Charge VDS = 10 V, ID = 0.22 A,
Gate-Source Charge All 0.15 0.25 nC

VGS = 10 V,

All 1.4 2 nC

Gate-Drain Charge All 0.2 0.4 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

I

SM

V

SD

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Maximum Continuous Source Current

Maximum Pulse Source Current (Note 1)

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.44 A

VGS = 0 V, IS = 0.34 A

BSS100
BSS123
BSS100
BSS123
BSS100
BSS123

0.22 A

0.17

0.9 A

0.68

0.9 1.3 V

0.9 1.3

Ω

BSS100 Rev. F1 / BSS123 Rev. F1

Typical Electrical Characteristics

0.6

0.5

0.4

0.3

0.2

0.1

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V =10V

GS

5.0

4.0

3.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

3.0

2.5

2.0

2.4

V =2.5V

2

1.6

DS(on)

R , NORMALIZED

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8
0 0.1 0.2 0.3 0.4 0.5 0.6

GS

I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

2.2

2

I = 220mA

D

V =10V

1.8

1.6

1.4

1.2

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

0.4

GS

1

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

3

V = 10V

2.5

1.5

DS(on)

R , NORMALIZED

0.5

DRAIN-SOURCE ON-RESISTANCE

GS

T = 125°C

J

2

25°C

1

0

0 0.2 0.4 0.6 0.8 1

I , DRAIN CURRENT (A)

D

3.0

-55°C

3.5

4.0

5.0
10

Figure 3. On-Resistance Variation

with Temperature.

1.2

V = V

DS

I = 250µA

1.1

1

0.9

th

V , NORMALIZED

0.8

GATE-SOURCE THRESHOLD VOLTAGE

0.7

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

D

Figure 5. Gate Threshold Variation with

Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.15

I = 250µA

GS

DSS

BV , NORMALIZED

D

1.1

1.05

1

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

Figure 6. Breakdown Voltage Variation with

Temperature.

BSS100 Rev. F1 / BSS123 Rev. F1

Typical Electrical Characteristics (continued)

80
50

20

10

5

CAPACITANCE (pF)

f = 1 MHz
V = 0V

GS

1

0.1 0.2 0.5 1 2 5 10 50
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

iss

oss

C

rss

10

I =220mA

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Q , GATE CHARGE (nC)

g

V = 5V

Figure 7. Capacitance Characteristics. Figure 8. Gate Charge Characteristics.

0.8

V = 5V

DS

0.6

0.4

0.2

T = -55°C

J

25°C

125°C

DS

20

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 0.1 0.2 0.3 0.4 0.5 0.6

I , DRAIN CURRENT (A)

D

Figure 9. Transconductance Variation with Drain

Current and Temperature.

V

DD

V

IN

R

L

D

V

GS

R

GEN

G

DUT

S

Figure 10. Switching Test Circuit.

V

OUT

t t

on off

t

d(on)

t

r

90%

V

OUT

V

IN

10%

50%

10%

PULSE WIDTH

Figure 11. Switching Waveforms.

t

d(off)

50%

90%

90%

10%

t

f

INVERTED

BSS100 Rev. F1 / BSS123 Rev. F1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

2

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

1

0.5

RDS(ON) Limit

0.2

0.1

0.05

D

I , DRAIN CURRENT (A)

0.01

0.005

V = 20V

GS

SINGLE PULSE

T = 25°C

A

1 5 10 20 50 100 150

V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

10ms

100ms

1s

1ms

100us

2

1

0.5

RDS(ON) Limit

0.2

0.1

0.05

D

I , DRAIN CURRENT (A)

0.01

0.005

V = 20V

GS

SINGLE PULSE

T = 25°C

A

1 5 10 20 50 100 150

V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

10ms

100ms

1s

100us

1ms

Figure 12. BSS100 Maximum Safe

Operating Area.

Figure 13. BSS123 Maximum Safe

Operating Area.

1

0.5

0.2

0.1

0.05

r(t), NORMALIZED EFFECTIVE

0.02

0.01

D = 0.5

R (t) = r(t) * R

θ

JA

R = 200 C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

0.05

0.02

0.01

0.2

0.1

Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300

1

Figure 14. BSS100 Transient Thermal Response Curve.

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

0.01

Single Pulse

0.002

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

1

R (t) = r(t) * R

θ

JA

R = 347 C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

o

θ

θ

JA

o

θ

JA

1 2

θ

JA

JA

1 2

Figure 15. BSS123 Transient Thermal Response Curve.

BSS100 Rev. F1 / BSS123 Rev. F1

TO-92 Package Dimensions

TO-92; TO-18 Reverse Lead Form (J35Z Option)

(FS PKG Code 92, 94, 96)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.22

;

*

*

Note: All package 97 or 98 transistors are leadformed
to this configuration prior to bulk shipment. Order
L34Z option if in-line leads are preferred on package
97 or 98.

* Standard Option on 97 & 98 package code

January 2000, Rev. B

SOT-23 Tape and Reel Data and Package Dimensions

SOT-23 Packagin g
Configu ration: Figur e 1.0

SOT-23 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm )
Max qty per B o x
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

Customized Label

Stan dard

(no flow code)

3,000 10,000
7" Dia

187x107x183 34 3x34 3x64

24,000 30,000

0.0082 0.0082

0.1175 0.4006

TNR

D87Z
TNR

13"

Antistatic Cover Tape

Human Readable

Label

Embossed

Carrier Tape

343mm x 342mm x 64mm

Intermediate box for L87Z Option

Packaging Description:

SOT-23

parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonat e
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primaril y composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts i n standard option are shipped with
3,000 uni ts per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other opt i ons are
described in the Packaging Information table.

These full reels are individually labeled and placed insi de
a standard intermediat e made of recyclable corrugated
brown paper with a Fairchil d logo printing. One pizza box
contains eight reels max imum. And these intermediate
boxes are placed inside a labeled shipping box which
comes in diff erent sizes dependin g on the number of parts
shipped.

3P 3P 3P 3P

SOT-23 Unit Orientation

Human Readable Label

Human Readable Label sample

SOT-23 Tape Leader and Trailer

Configuration: Figur e 2.0

Carrier Tape

Cover Tape

Trailer Tape
300mm minimum or

75 empty pockets

Components

Human readable
Label

187mm x 107mm x 183mm

Intermediate Box for Standard Option

Leader Tape
500mm minimum or

125 empty pockets

September 1999, Rev. C

SOT-23 Tape and Reel Data and Package Dimensions, continued

SOT-23 Embossed Carrier Tape
Confi guration: Figure 3.0

T

B0

Wc

D0P0 P2

D1

E1

W

F

E2

Tc

K0

P1

A0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOT-23

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOT-23 Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.15

2.77

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.125

+/-0.10

3.50

min

+/-0.05

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum

B0

20 deg maximum component rotation

Sketch A (Side or Fro nt Sectional View)

Component Rotation

W1 Measured at Hub

A0

Sketch B (Top View)

Component Rotation

4.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

1.30

0.228
+/-0.013

5.2
+/-0.3

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

Tape Size

8mm 7" Dia

8mm 13" Dia

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 – 0.429

7.9 – 10.9

0.311 – 0.429

7.9 – 10.9

September 1999, Rev. C

SOT-23 Tape and Reel Data and Package Dimensions, continued

SOT-23 (FS PKG Code 49)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gr am): 0.0082

September 1998, Rev. A1

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not intended to be an exhaustive list of all such trademarks.

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2

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TM

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®

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ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
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SyncFET™
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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D