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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – JUNE 1996 ✪
BSR30
COMPLEMENTARY TYPE – BSR40
C
PARTMARKING DETAIL – BR1
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
V
CE(sat)
V
BE(sat)
h
FE
-70 V
-60 V IC=-10mA
-5 V
-100
-50
-0.25
-0.5VV
-1.0
-1.2VV
10
40
120
30
Collector Capacitance C
Emitter Capacitance C
Transition Frequency f
Turn-On Time T
Turn-Off Time T
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT551 datasheet.
c
e
T
on
off
100 MHz IC=-50mA, VCE=-10V
20 pF VCB =-10V, f =1MHz
120 pF VEB =-0.5V, f =1MHz
500 ns VCC =-20V, IC =-100mA
650 ns
3 - 65
-70 V
-60 V
-5 V
-2 A
-1 A
1W
-65 to +150 °C
=-100µA
I
C
I
=-10µA
E
nA
µA
VCB=-60V
V
=-60V, T
CB
amb
IC =-150mA, IB=-15mA
I
=-500mA, IB=-50mA
C
IC=-150mA, IB=-15mA
I
=-500mA, IB=-50mA
C
I
=-100µA, V
C
I
=-100mA, VCE =-5V
C
I
=-500mA, VCE =-5V
C
CE
f =35MHz
I
=-IB2 =-5mA
B1
E
C
=125°C
=-5V
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