Datasheet BSR12 Datasheet (Philips) [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BSR12

PNP switching transistor

Product specification 1999 Jul 23

Philips Semiconductors Product specification

PNP switching transistor BSR12

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 15 V).

APPLICATIONS

• High-speed, saturated switching applications for
industrial service in thick and thin-film circuits.

handbook, halfpage

Top view

3

1

21

MAM256

3

2

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

Fig.1 Simplified outline (SOT23) and symbol.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

MARKING

TYPE NUMBER MARKING CODE

BSR12 B5p

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I
P
T
h

f
t

CBO
CEO

CM

tot
j
FE

T
off

collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−15 V
peak collector current −−200 mA
total power dissipation T

≤ 25 °C − 250 mW

amb

junction temperature − 150 °C
DC current gain IC= −10 mA; VCE= −1V 30 −

=−50 mA; VCE= −1 V 30 120

I

C

transition frequency f = 500 MHz; IC= −50 mA; VCE= −10 V 1.5 − GHz
turn-off time I

= −30 mA; I

Con

= −3 mA; I

Bon

= 3mA − 30 ns

Boff

1999 Jul 23 2

Philips Semiconductors Product specification

PNP switching transistor BSR12

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−3V
collector current (DC) −−100 mA
peak collector current −−200 mA
total power dissipation T

≤ 25 °C − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

thermal resistance from junction to

note 1 500 K/W

ambient

Note

1. Transistor mounted on a ceramic substrate 8 × 10 × 0.7 mm.

1999 Jul 23 3

Philips Semiconductors Product specification

PNP switching transistor BSR12

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CES

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

f

T

C

c

C

e

Switching time (see Fig.2)
t

on

t

off

collector cut-off current IE= 0; VCB= −10 V −−−50 nA

I

=0;VCB= −10 V; T

E

= 125 °C −−−5µA

amb

collector cut-off current VBE= 0; VCE= −10 V −−−50 nA
breakdown voltage IE= 0; IC= −10 µA −15 −−V
breakdown voltage VBE= 0; IC= −10 µA −15 −−V
breakdown voltage IC= 0; IE= −100 µA −3 −−V
collector-emittersustaining

IB= 0; IC= −10 mA −15 −−V

voltage
collector-emitter saturation

voltage

base-emitter saturation
voltage

IC= −10 mA; IB= −1 mA; note 1 −−−130 mV
I

= −50 mA; IB= −5 mA; note 1 −−180 −270 mV

C

= −100 mA; IB= −10 mA; note 1 −−−450 mV

I

C

IC= −10 mA; IB= −1 mA; note 1 −725 −−920 mV
I

= −50 mA; IB= −5 mA; note 1 −800 −−1150 mV

C

I

= −100 mA; IB= −10 mA; note 1 −900 −−1500 mV

C

DC current gain IC= −1 mA; VCE= −1 V; note 1 30 −−

I

=−10 mA; VCE= −1 V; note 1 30 −−

C

I

=−50 mA; VCE= −1 V; note 1 30 − 120

C

I

= −50 mA; VCE= −1V;

C

T

=55°C; note 1

amb

I

=−100 mA; VCE= −1 V; note 1 20 −−

C

transition frequency IC = −50 mA; VCE= −10 V;

30 −−

1.5 −−GHz

f = 500 MHz
collector capacitance IE=Ie= 0; VCB= −5V −−4.5 pF
emitter capacitance IC=Ic= 0; VEB= −0.5 V −−6pF

turn-on time Vi=−6.85 V; VBB=0V;

I

= −30 mA; I

Con

= −3.0 mA

Bon

turn-off time Vi= 11.7 V; VBB=−9.85 V;

I

= −30 mA; I

Con

I

=3mA

Boff

Bon

= −3 mA;

−−20 ns

−−30 ns

Note

1. Pulse test: t

= 300 µs; δ = 0.01.

p

1999 Jul 23 4

Philips Semiconductors Product specification

PNP switching transistor BSR12

VCC = −3 V

V

handbook, halfpage

V

BB

R2

C

i

50 Ω

R3

DUT

R1

MGS460

V

o

R1 = 94 Ω; R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1 µF.
Pulse generator:Pulse duration tp= 400 ns. Rise time tr< 1 ns. Output impedance ZO=50Ω.
Sampling scope: Rise time tr< 1 ns. Input impedance Zi= 100 kΩ.

Fig.2 Test circuit for switching times.

70

handbook, full pagewidth

h

FE

60

typ

50

40

30

MGS461

20

−1

−10

VCE= − 1 V; T

amb

=25°C.

−1 −10 −10

Fig.3 DC current gain; typical values.

1999 Jul 23 5

−10

2

IC (mA)

3

Philips Semiconductors Product specification

PNP switching transistor BSR12

−500

handbook, full pagewidth

V

CEsat
(mV)

−400

−300

−200

−100

0

−1

−10

IC/IB= 10.

Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values.

MGS462

typ

−1 −10 −10

−10

2

IC (mA)

3

−1000

handbook, full pagewidth

V

BEsat
(mV)

−800

−600

−400

−200

0

−1

−10

IC/IB= 10.

typ

−1 −10 −10

−10

2

IC (mA)

Fig.5 Base-emitter saturation voltage as a function of collector current; typical values.

MGS463

3

1999 Jul 23 6

Philips Semiconductors Product specification

PNP switching transistor BSR12

(1) IC= 100 mA; IB=10mA
(2) IC= 50 mA and IB= 5 mA.

Fig.6 Collector-emitter saturation voltage as a function of junction temperature; typical values.

−500

handbook, halfpage

V

CEsat

(mV)

−400

−300

−200

−100

0

0 200

MGS464

(1)

(2)

40

80 120 160

Tj (

°C)

1999 Jul 23 7

Philips Semiconductors Product specification

PNP switching transistor BSR12

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

1

UNIT

mm

VERSION

A

1.1

0.9

OUTLINE

SOT23

max.

1999 Jul 23 8

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

PNP switching transistor BSR12

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Jul 23 9

Philips Semiconductors Product specification

PNP switching transistor BSR12

NOTES

1999 Jul 23 10

Philips Semiconductors Product specification

PNP switching transistor BSR12

NOTES

1999 Jul 23 11

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67

SCA

Printed in The Netherlands 125006/02/pp12 Date of release: 1999 Jul 23 Document order number: 9397 750 06129