Page 1
BSP 88
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
Type
BSP 88 240 V 0.32 A 8
= 0.6...1.2V
V
DS
I
D
R
DS(on)
Ω
Package Marking
SOT-223 BSP 88
Type Ordering Code Tape and Reel Information
BSP 88 Q67000-S070 E6327
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
Drain-gate voltage
R
= 20 k
GS
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
T
= 25 °C
A
DC drain current, pulsed
T
= 25 °C
A
Power dissipation
T
= 25 °C
A
V
DS
V
DGR
V
GS
V
gs
I
D
I
Dpuls
P
tot
240 V
240
±
14
± 20
A
0.32
1.28
W
1.7
Semiconductor Group 1 Sep-12-1996
Page 2
BSP 88
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
T
j
T
stg
R
thJA
1)
R
thJS
-55 ... + 150 °C
-55 ... + 150
≤ 72 K/W
≤
12
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
V
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 240 V,
= 240 V,
= 100 V,
V
V
V
GS
GS
GS
= 0 V,
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
T
= 25 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
V
GS
GS
= 4.5 V,
= 2.8 V,
I
= 0.32 A
D
I
= 14 mA
D
V
GS(th)
I
DSS
I
GSS
R
DS(on)
240 - -
0.6 0.8 1.2
-
-
-
0.1
10
-
1 µA
100
100
- 10 100
-
-
4
6
8
15
nA
nA
Ω
Semiconductor Group 2 Sep-12-1996
Page 3
BSP 88
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 0.32 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 0.28 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
0.14 0.34 pF
- 80 110
- 15 25
- 8 12
ns
- 5 8
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50 Ω
V
GS
= 10 V,
Fall time
V
R
DD
GS
= 30 V,
= 50 Ω
V
GS
= 10 V,
I
= 0.28 A
D
I
= 0.28 A
D
I
= 0.28 A
D
t
r
t
d(off)
t
f
- 10 15
- 30 40
- 25 35
Semiconductor Group 3 Sep-12-1996
Page 4
BSP 88
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
A
Inverse diode direct current,pulsed
T
= 25 °C
A
Inverse diode forward voltage
V
= 0 V,
GS
I
= 0.5 A,
F
T
= 25 °C
j
I
I
V
S
SM
SD
A
- - 0.32
- - 1.28
V
- 1.05 1.3
Semiconductor Group 4 Sep-12-1996
Page 5
BSP 88
Power dissipation
P
= ƒ(
T
tot
P
tot
)
A
2.0
W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
A
)
A
≥
GS
4 V
V
0.34
A
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0 20 40 60 80 100 120 °C 160
T
A
Safe operating area
parameter :
D
= 0,
T
I
=f(
D
=25°C
C
V
DS
)
Transient thermal impedance
Z
= ƒ(
t
2
1
0
-1
-2
-3
-4
10
)
p
D = t
single pulse
-8
10
/
T
p
-7
-6
-5
10
10
10
-4
10
th JA
parameter:
10
K/W
10
Z
thJC
10
10
10
10
10
-3
D = 0.50
-2
10
0.20
0.10
0.05
0.02
0.01
10
t
p
-1
10 0 s
Semiconductor Group 5 Sep-12-1996
Page 6
BSP 88
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs ,
p
0.75
P
= 2W
tot
A
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 1 2 3 4 5 6 7 V 9
T
= 25 °C
j
k
i
g
j
l
f
e
h
V
d
c
b
a
[V]
GS
a 1.5
b 2.0
c 2.5
d 3.0
e 3.5
f 4.0
g 4.5
h 5.0
i 6.0
j 7.0
k 8.0
l 10.0
V
DS
Typ. drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
ƒ(
=
I
)
D
t
= 80 µs,
p
26
Ω
a
22
20
18
16
14
12
10
8
6
4
V
[V] =
GS
a
1.5
2.0
b
2
0
0.00 0.10 0.20 0.30 0.40 0.50 A 0.65
2.5
T
= 25 °C
j
b
c
d
3.0
3.5
c
e
f
g
4.5
5.0
h
4.0
6.0
d
e
f
g
h
i
j
k
l
i
j
k
7.0
l
8.0
10.0
I
D
Typ. transfer characteristics
parameter:
1.3
1.1
I
D
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
t
= 80 µs
p
A
0 1 2 3 4 5 6 7 8 V 10
ID = f(V
GS
)
V
GS
Typ. forward transconductance
parameter:
0.55
0.45
g
fs
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
t
= 80 µs,
p
S
0.0 0.2 0.4 0.6 0.8 A 1.1
g
= f (
fs
I
)
D
I
D
Semiconductor Group 6 Sep-12-1996
Page 7
BSP 88
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
20
= 0.32 A,
D
V
GS
= 4.5 V
Ω
16
14
12
10
8
6
4
2
0
-60 -20 20 60 100 °C 160
98%
typ
Gate threshold voltage
V
parameter:
V
GS(th)
T
j
GS (th)
= ƒ(
T
)
j
V
=
V
,
I
GS
2.6
V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-60 -20 20 60 100 °C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
=0V, f = 1 MHz
GS
3
10
pF
2
10
1
10
0
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
1
10
A
0
10
-1
10
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
-2
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Semiconductor Group
7 Sep-12-1996
Page 8
BSP 88
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
285
V
275
270
265
260
255
250
245
240
235
230
225
220
215
-60 -20 20 60 100 °C 160
Safe operating area
parameter :
T
j
D
= 0.01,
I
D
T
=f(
V
=25°C
C
DS
)
Semiconductor Group 8 Sep-12-1996
Page 9
BSP 88
Package outlines
SOT-223
Dimensions in mm
Semiconductor Group 9 Sep-12-1996
Loading...