Datasheet BSP 76 E6433 INF Datasheet

)

A

Smart Low Side Power Switch

HITFET BSP 76

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown with auto restart

• Green product (RoHS compliant)

Product Summary

Drain source voltage

On-state resistance R

Nominal load current I

Clamping energy E

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

Application

· All kinds of resistive, inductive and capacitive loads in switching or linear applications

· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

V

DS

DS(on

D(Nom

S

4

42 V

200 mW

1.4 A

150 mJ

3

2

1

VPS05163

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions.

Vbb

M

Drain

Pin 2 and 4 (TAB)

Pin 3

Source

Pin 1

HITFET

In

ESD

â

Gate-Driving

Unit

Overload Protection

Current Limitation

Overtemperature Protection

OvervoltageProtection

Short circuit Protection

Complete product spectrum and additional information http://www.infineon.com/hitfet

Datasheet 1 Rev. 1.3, 2008-04-14

)

j

g

A

Maximum Ratings at Tj = 25°C, unless otherwise specified

Smart Low Side Power Switch

HITFET BSP 76

Parameter

Drain source voltage V

Supply voltage for full short circuit protection V

Continuous input voltage

Continuous input current

1)

2)

-0.2V £ VIN£ 10V

V

< -0.2V or VIN > 10V

IN

Operating temperature T

Storage temperature T

Power dissipation

5)

TC = 85 °C

Unclamped single pulse inductive energy

Load dump protection V

LoadDump

2)3)

2)

= VA + V

S

VIN = 0 and 10 V, td = 400 ms, RI = 2 W,

= 9 W, VA = 13.5 V

R

L

Electrostatic discharge voltage

2)

(Human Body Model)

according to Jedec norm

EIA/JESD22-A114-B, Section 4

Symbol Value Unit

DS

bb(SC

V

IN

I

IN

42 V

42

-0.22) ... +10

mA

self limited

| I

| £ 2

IN

°C

mJ

P

E

V

st

tot

S

LD

ESD

-40 ...+150

-55 ... +150

3.8 W

150

50 V

2 kV

Thermal resistance

junction - ambient:

@ min. footprint

@ 6 cm

2

cooling area

4)

junction-soldering point: R

1

For input voltages beyond these limits I

2

not subject to production test, specified by design

3

V

Loaddump

4

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB mounted vertical without blown air.

5

not subject to production test, calculated by R

Datasheet 2 Rev. 1.3, 2008-04-14

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

has to be limited.

IN

and R

thJA

R

thJA

125

72

thJS

2 (one layer, 70µm thick) copper area for drain

ds(on)

17 K/W

K/W

)

a

Electrical Characteristics

Smart Low Side Power Switch

HITFET BSP 76

Parameter

Symbol Values Unit

at Tj = 25°C, unless otherwise specified min. typ. max.

Characteristics

Drain source clamp voltage

T

= - 40 ...+ 150, ID = 10 mA

j

Off-state drain current

= -40...+85 °C, Vbb = 32 V, VIN = 0 V

T

j

= 150 °C

T

j

Input threshold voltage

= 0.3 mA, Tj= 25 °C

I

D

= 0.3 mA, Tj= 150 °C

I

D

On state input current I

On-state resistance

= 5 V, ID = 1.4 A, Tj = 25 °C

V

IN

= 5 V, ID = 1.4 A, Tj = 150 °C

V

IN

On-state resistance

= 10 V, ID = 1.4 A, Tj = 25 °C

V

IN

= 10 V, ID = 1.4 A, Tj = 150 °C

V

IN

Nominal load current

5)

V

DS(AZ)

I

DSS

V

IN(th)

IN(on

R

DS(on)

R

DS(on)

I

D(Nom)

42 - 55 V

-

1.3

0.8

1.5

4

1.7

-

8

10

2.2

-

- 10 30 µA

-

190

350

150

280

240

480

200

400

1.4 1.8 - A

VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C

Current limit (active if VDS>2.5 V)

1)

I

D(lim)

5 7.5 10

VIN = 10 V, VDS = 12 V, tm = 200 µs

µA

V

mW

1

Device switched on into existing short circuit (see diagram Determination of I

nd a short circuit occurs, these values might be exceeded for max. 50 µs.

5

not subject to production test, calculated by R

Datasheet 3 Rev. 1.3, 2008-04-14

thJA

and R

ds(on)

). If the device is in on condit

D(lim)

j

Electrical Characteristics

Smart Low Side Power Switch

HITFET BSP 76

Parameter

Symbol Values Unit

at Tj = 25°C, unless otherwise specified min. typ. max.

Dynamic Characteristics

Turn-on time V

= 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

R

L

to 90% ID:

IN

Turn-off time VIN to 10% ID:

R

= 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

L

Slew rate on 70 to 50% Vbb:

R

= 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

L

Slew rate off 50 to 70% Vbb:

R

= 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

L

Protection Functions

1)

Thermal overload trip temperature T

Thermal hysteresis

Input current protection mode

T

= 150 °C

j

Unclamped single pulse inductive energy

= 1.4 A, Tj = 25 °C, Vbb = 12 V

I

D

2)

t

on

t

off

-dVDS/dt

dVDS/dt

t

DT

t

I

IN(Prot)

E

AS

on

off

- 45 100

- 60 100

- 0.4 1.5

- 0.6 1.5

150 175 - °C

- 10 - K

- 40 300 µA

150 - - mJ

µs

V/µs

Inverse Diode

Inverse diode forward voltage

I

= 7 A, tm = 250 µs, VIN = 0 V,

F

t

= 300 µs

P

1

Integrated protection functions are designed to prevent IC destruction under fault conditions

described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2

not subject to production test, specified by design

Datasheet 4 Rev. 1.3, 2008-04-14

V

SD

- 1 1.5

V

Block diagram

Smart Low Side Power Switch

HITFET BSP 76

Terms

R

L

I

IN

1

HITFET

V

IN

2

D

I

V

D

DS

3

S

Input circuit (ESD protection)

Gate Drive

Input

Inductive and overvoltage output clamp

V

Z

V

bb

D

S

HITFET

Short circuit behaviour

V

IN

Source/ Ground

I

IN

I

DS

T

j

Datasheet 5 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch

HITFET BSP 76

1 Maximum allowable power dissipation

= f(TS) resp.

P

tot

P

= f(TA) @ R

tot

10

W

8

max.

7

tot

P

6

5

4

3

2

6cm2

1

0

-75 -50 -25 0 25 50 75 100

thJA

=72 K/W

°C

TS ;T

3 On-state resistance

= f(Tj); ID= 1.4A; VIN=5V

R

ON

150

2 On-state resistance

= f(Tj); ID=1.4A; VIN=10V

R

ON

500

mW

400

350

DS(on)

R

300

250

200

150

100

50

0

-50 -25 0 25 50 75 100 125

A

max.

typ.

°C

175

T

j

4 Typ. input threshold voltage

V

IN(th)

= f(Tj); ID = 0.15 mA; V

DS

= 12V

500

mW

400

350

DS(on)

R

300

250

200

150

100

50

0

-50 -25 0 25 50 75 100 125

max.

typ.

°C

175

T

j

2

V

1.6

1.4

GS(th)

V

1.2

1

0.8

0.6

0.4

0.2

0

-50 -25 0 25 50 75 100

°C

150

T

j

Datasheet 6 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch

HITFET BSP 76

5 Typ. transfer characteristics

=f(VIN); VDS=12V; T

I

D

8

A

6

5

D

I

4

3

2

1

0

0 1 2 3 4 5 6 7 8

Jstart

=25°C

7 Typ. output characteristics

=f(VDS); T

I

D

Parameter: V

10

A

Jstart

IN

=25°C

Vin=10V

7V

6 Typ. short circuit current

I

Parameter: V

V

10

V

IN

= f(Tj); VDS=12V

D(lim)

IN

10

A

8

7

D(lim)

I

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125

Vin=10V

5V

°C

T

j

175

8 Off-state drain current

= f(Tj)

I

DSS

11

µA

max.

8

7

D

I

6

5

4

3

2

1

0

0 1 2 3 4

6V

5V

4V

3V

V

6

V

DS

9

8

7

DSS

I

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125

°C

typ.

175

T

j

Datasheet 7 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch

HITFET BSP 76

9 Typ. overload current

I

Parameter: T

= f(t), Vbb=12 V, no heatsink

D(lim)

jstart

12

A

-40°C

25°C

8

D(lim)

I

85°C

6

150°C

4

2

0

0 0.5 1 1.5 2 2.5 3

ms

10 Typ. transient thermal impedance

Z

=f(tp) @ 6 cm2 cooling area

thJA

Parameter: D=t

2

10

K/W

D=0.5

0.2

1

10

thJA

Z

10

4

10

t

0.1

0.05

0.02

0

0.01

-1

-2

10-710-610-510-410-310-210-110010110

/T

p

Single pulse

2

t

4

s

10

p

11 Determination of I

I

Parameter: T

= f(t); tm = 200µs

D(lim)

12

A

8

D(lim)

I

6

4

2

0

0 0.1 0.2 0.3 0.4

Jstart

D(lim)

150°C

ms

-40°C

25°C

85°C

0.55

t

Datasheet 8 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch

HITFET BSP 76

1 Package Outlines

±0.2

6.5

A

±0.1

3

12

Package Outlines

±0.1

1.6

0.1 MAX.

4

B

15˚ MAX.

±0.3

7

3

±0.2

3.5

4.6

2.3

0.5 MIN.

M

B0.25

0.28

±

0.0

0...10˚

GPS05560

4

±0.1

0.7

0.25

Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Please specify the package needed (e.g. green package) when placing an order

M

A

You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products.

Datasheet 9 Rev. 1.3, 2008-04-14

Dimensions in mm

Smart Low Side Power Switch

HITFET BSP 76

2 Revision History

Version Date Changes

Rev. 1.3

Rev. 1.2

Rev. 1.1 2004-03-05 released production version

2008-04-14 Package information updated to SOT223-4

2007-03-28 released automotive green version

Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added

Revision History

Datasheet 10 Rev. 1.3, 2008-04-14

Edition 2008-04-14

Published by Infineon Technologies AG 81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

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