Datasheet BSP 75N INF Datasheet

Smart Lowside Power Switch

HITFET BSP 75N

Data Sheet Rev. 1.4

Features

• Logic Level Input

• Input protection (ESD)

• Thermal shutdown with auto restart

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

• Green Product (RoHS compliant)

• AEC Stress Test Qualification

Application

• All kinds of resistive, inductive and capacitive loads in switching applications

• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
Powernet

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart Power Technology. Fully protected by embedded
protection functions.

Type Ordering Code Package

HITFET BSP 75N on request PG-SOT223-4

Product Summary

Parameter Symbol Value Unit

Continuous drain source voltage V

On-state resistance R

Current limitation I

Nominal load current I

Clamping energy E

Data Sheet Rev. 1.4 1 2008-07-10

DS

DS(ON)

D(lim)

D(Nom)

AS

60 V

550 mΩ

1 A

0.7 A

550 mJ

HITFET BSP 75N

V

bb

HITFET

Logic OUTPUT

ESD

dV/dt

limitation

Over

temperature

Protection

IN

Figure 1 Block Diagram

Figure 2 Pin Configuration

Over voltage

Protection

Short circuit

Protection

Current

Limitation

1

IN

2

DRAIN

3

SOURCE

Stage

SOURCE

M

DRAIN

SOURCE

TAB

Pin Definitions and Functions

Pin No. Symbol Function

1 IN Input; activates output and supplies internal logic

2 DRAIN Output to the load

3 + TAB SOURCE Ground; pin3 and TAB are internally connected

Data Sheet Rev. 1.4 2 2008-07-10

HITFET BSP 75N

Circuit Description

The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a
logic level input, an open drain DMOS output stage and integrated protection functions.
It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive
and industrial applications.

Protection Functions

• Over voltage protection: An internal clamp limits the output voltage at V
60V) when inductive loads are switched off.

• Current limitation: By means of an internal current measurement the drain current is
limited at I

(1.4 - 1.5 A typ.). If the current limitation is active the device operates

D(lim)

in the linear region, so power dissipation may exceed the capability of the heatsink.
This operation leads to an increasing junction temperature until the over temperature
threshold is reached.

• Over temperature and short circuit protection: This protection is based on sensing
the chip temperature. The location of the sensor ensures a fast and accurate junction
temperature detection. Over temperature shutdown occurs at minimum 150
hysteresis of typ. 10 K enables an automatic restart by cooling.

The device is ESD protected according Human Body Model (4 kV) and load dump
protected (see Maximum Ratings).

DS(AZ)

(min.

°C. A

Data Sheet Rev. 1.4 3 2008-07-10

HITFET BSP 75N

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

j

Parameter Symbol Values Unit Remarks

Continuous drain source voltage

Drain source voltage for
short circuit protection

Continuous input voltage V

Peak input voltage V

Continuous Input Current

-0.2V ≤ V

V

<-0.2V or VIN>10V

IN

≤ 10V

IN

Operating temperature range
Storage temperature range

Power dissipation (DC) P

Unclamped single pulse inductive energy E

Load dump protection

2)

IN = low or high (8 V); RL = 50 Ω
IN = high (8 V); RL = 22 Ω

Electrostatic discharge voltage (Human
Body Model)
according to MIL STD 883D, method

3015.7 and EOS/ESD assn. standard

S5.1 - 1993

1)

V

DS

V

DS

IN

IN

I

IN

60 V –

36 V –

-0.2 … +10 V –

-0.2 … +20 V –

mA –

no limit
| IIN |≤ 2mA

T

j

T

stg

tot

AS

V

LoadDump

V

ESD

-40 … +150

-55 … +150°C°C

1.8 W –

550 mJ I

V V
80
47

4000 V –

–

= 0.7 A;

D(ISO)

V

=32V

bb

LoadDump

V

+ VS;

P

V

= 13.5 V

P

3)

R

= 2 Ω;

I

t

= 400 ms;

d

=

Thermal Resistance

Junction soldering point R

Junction - ambient

1)

See also Figure 7 and Figure 10.

2)

V

is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7.

LoadDump

3)

R

= internal resistance of the load dump test pulse generator LD200.

I

4)

Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.

Data Sheet Rev. 1.4 4 2008-07-10

4)

thJS

R

thJA

≤ 10 K/W –

≤ 70 K/W –

Electrical Characteristics

T

= 25 °C, unless otherwise specified

j

Parameter Sym-

bol

Static Characteristics

HITFET BSP 75N

Limit Values Unit Test Conditions

min. typ. max.

Drain source clamp voltage V

Off state drain current I

Input threshold voltage V

Input current:
normal operation, ID < I
current limitation mode, ID = I

D(lim)

:

D(lim)

:

After thermal shutdown, ID = 0 A:

On-state resistance

T

= 25 °C

j

T

= 150 °C

j

On-state resistance

T

= 25 °C

j

T

= 150 °C

j

Nominal load current I

Current limit I

Dynamic Characteristics

1)

DS(AZ)

DSS

IN(th)

I

IN(1)

I

IN(2)

I

IN(3)

R

DS(on)

R

DS(on)

D(Nom)

D(lim)

60 – 75 V ID = 10 mA,

T

= -40 … +150 °C

j

– – 5 µA VIN = 0 V,

V

= 32 V,

DS

T

= -40 … +150 °C

j

1 1.8 2.5 V ID = 10 mA

µA VIN = 5 V

–

100

200

–

250

400

1000

1500

2000

mΩ ID = 0.7 A,

–

490

675

–

850

1350

V

= 5 V

IN

mΩ ID = 0.7 A,

–

430

550

–

750

1000

V

IN

= 10 V

0.7 – – A VBB = 12 V,

V

= 0.5 V,

DS

T

= 85 °C,

S

T

< 150 °C

j

1 1.5 1.9 A VIN = 10 V,

V

= 12 V

DS

Turn-on time VIN to 90% ID: t

Turn-off time VIN to 10% ID: t

Data Sheet Rev. 1.4 5 2008-07-10

– 10 20 µs RL = 22 Ω,

on

– 10 20 µs RL = 22 Ω,

off

V

= 0 to 10 V,

IN

V

= 12 V

BB

V

= 10 to 0 V,

IN

V

= 12 V

BB

Electrical Characteristics (cont’d)

T

= 25 °C, unless otherwise specified

j

Parameter Sym-

bol

Slew rate on 70 to 50% VBB: -dVDS/

t

d

on

Slew rate off 50 to 70% VBB: dVDS/

dt

off

HITFET BSP 75N

Limit Values Unit Test Conditions

min. typ. max.

– 5 10 V/

– 10 15 V/

µs

µs

R

= 22 Ω,

L

V

= 0 to 10 V,

IN

V

= 12 V

BB

R

= 22 Ω,

L

V

= 10 to 0 V,

IN

V

= 12 V

BB

Protection Functions

Thermal overload trip

2)

T

150 165 180 °C –

jt

temperature

Thermal hysteresis

Unclamped single pulse inductive
energy Tj = 25 °C

T

= 150 °C

j

∆

T

– 10 – Κ –

jt

E

AS

550
200––

mJ I

–

D(ISO)

V

BB

= 0.7 A,

= 32 V

–

Inverse Diode

Continuous source drain voltage V

– 1 – V VIN = 0 V,

SD

-ID = 2 × 0.7 A

1)

See also Figure 9.

2)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous, repetitive operation.

Data Sheet Rev. 1.4 6 2008-07-10

HITFET BSP 75N

EMC-Characteristics

The following EMC-Characteristics outline the behavior of typical devices. They are not
part of any production test.

Table 1Test Conditions

Parameter Symbol Value Unit Remark

Temperature T

Supply Voltage V

Load R

A

S

L

Operation mode PWM

DC

DUT specific VIN(’HIGH’)=5V

Fast electrical transients

acc. to ISO 7637

Test Result

Test1)
Pulse

Max.

Test

Level

OUT

ON OFF

1 -200V C C 500ms ; 10Ω

2 +200V C C 500ms ; 10Ω

3a -200V C C 100ms ; 50Ω

3b +200V C C 100ms ; 50Ω

4 -7V C C 0.01Ω

5 175V E(65V) E(75V) 400ms ; 2Ω

1)

The test pulses are applied at V

S

23 ±5 °C –

13.5 V –

27 Ω ohmic

–
–

stressed

x

–
–

f

=100Hz, D=0.5

INx

ON / OFF

Pulse Cycle Time

and Generator

Impedance

Definition of functional status

Class Content

C All functions of the device are performed as designed after exposure to

disturbance.

E One or more function of a device does not perform as designed after

exposure and can not be returned to proper operation without repairing
or replacing the device. The value after the character shows the limit.

Data Sheet Rev. 1.4 7 2008-07-10

V

BB

PULSE

BSP75N

R

L

DRAININ

SOURCE

Figure 3 Test circuit for ISO pulse

Conducted Emissions

Acc. IEC 61967-4 (1Ω/150Ω method)

Typ. Vbb Emissions at PWM-mode with
150Ω-matching network

100

90

80

70

60

50

40

dBµV

30

20

10

0

-10

-20
0,1 1 10 100 1000

f / MHz

Noise leve l
BSP75N
150ohm Class6
150ohm Class1

150Ω / 8-H

150Ω / 13-N

HITFET BSP 75N

Conducted Susceptibility

Acc. 47A/658/CD IEC 62132-4 (Direct
Power Injection)

Direct Power Injection: Forward Power
CW

Failure Criteria: Amplitude or frequency
variation max. 10% at OUT

Typ. Vbb Susceptibility at DC-ON/OFF and at PWM

40

35

30

25

20

dBm

15

10

5

0

1 10 100 1000

V

BB

f / MHz

B A N

BSP75N

DRAININ

SOURCE

Limit
OUT, ON
OUT, OFF
OUT, PWM

R

L

HF

V

BB

Test circuit for conducted susceptibility

BSP75N

R

L

2)

DRAININ

1)

SOURCE

Figure 4 Test circuit for conducted

emission

150Ω-Network

1)

For defined de coupling and high reproducibility a
defined choke (5µH at 1MHz) is inserted in the
Vbb-Line.

2)

Broadband Artificial Network (short: BAN) consists
of the same choke (5µH at 1MHz) and the same

Ohm-matching network as for emission

150
measurement for defined de coupling and high
reproducibility.

Data Sheet Rev. 1.4 8 2008-07-10

Block diagram

HITFET BSP 75N

V

BB

I

D

HITFET

I

IN

DRAININ

V

IN

SOURCE

V

bb

V

DS

Figure 5 Terms

IN

SOURCE

Figure 6 Input Circuit (ESD

protection)

ESD zener diodes are not designed for DC
current.

LOAD

V

AZ

Drain

uC

GND

V

Px.1

BSP75N

cc

DIN

SOURCE

Figure 8 Application Circuit

V

DS

Power

DMOS

Source

I

D

Figure 7 Inductive and Over

voltage Output Clamp

Data Sheet Rev. 1.4 9 2008-07-10

Timing diagrams

V

IN

V

DS

t

on

Load

0.9*I

V

BB

D

0.1*I

t

off

V

DS(AZ)

I

D

Figure 9 Switching a Resistive

V

IN

V

DS

HITFET BSP 75N

V

IN

I

t

t

D

t

I

D

ϑ

j

Figure 11 Short circuit

D(lim)

thermal hysteresis

t

t

t

t

t

I

D

t

Figure 10 Switching an Inducitve

Load

Data Sheet Rev. 1.4 10 2008-07-10

HITFET BSP 75N

1 Max. allowable power dissipation

P

tot

P

= f(T

2

tot

1,6

W

1,2

0,8

0,4

0

)

Amb

max.

0 25 50 75 100 125 150

°C

3 On-state resistance RON = f(Tj);

I

= 0.7 A; VIN = 5 V

D

1400

R

ON

mΩ

1200

1000

800

600

max.

typ.

2 On-state resistance RON = f(Tj);

I

= 0.7 A; VIN = 10 V

D

1000

R

ON

900

m Ω

800

700

600

500

400

300

200

100

0

-50 -25 0 25 50 75 100 125 150

T

Amb

max.

typ.

°C

T

j

4 Typ. input threshold voltage

V

= f(Tj); ID = 10 mA; VDS = 12 V

IN(th)

2,5

V

IN(th )

V

2

1,5

1

typ.

400

200

0

-50 -25 0 25 50 75 100 125 150

°C

T

j

0,5

0

-50 -25 0 25 50 75 100 125 150

°C

T

j

Data Sheet Rev. 1.4 11 2008-07-10

HITFET BSP 75N

0

5 Typ. on-state resistance RON = f(VIN);

I

= 0.7 A; Tj = 25 °C

D

2000

R

ON

1500

m Ω

1000

500

0

0246810

typ.

V

V

7 Typ. short circuit current

I

) = f(VIN); VDS = 12 V, Tj = 25 °C

D(SC

2

I

D(SC)

A

1,5

typ.

6 Typ. current limitation I

V

= 12 V, VIN = 10 V

DS

2

I

D(lim )

A

1,5

1

0,5

0

-50 -25 0 25 50 75 100 125 150

IN

D(lim)

typ.

8 Max. transient thermal impedance

Z

= f(tp) @ 6cm²; Parameter: D = tp/T

thJA

100

Z

th(JA )

10

K/W

= f(Tj);

°C

T

j

1

0,5

0

0246810

V

1

0,1

V

IN

0,00001 0,001 0,1 10 1000 10000

D=

0.5

0.2

0.1

0.05

0.02

0.01
0

s

t

P

Data Sheet Rev. 1.4 12 2008-07-10

HITFET BSP 75N

Package Outlines HITFET‚ BSP 75N

1 Package Outlines HITFET BSP 75N

±0.2

A

±0.1

0.7

0.25MA

6.5

±0.1

3

4

12

3

2.3

4.6

0.1 MAX.

±0.3

7

0.5 MIN.

±0.1

1.6

15˚ MAX.

0.28

0...10˚

M

B0.25

GPS05560

B

±0.2

3.5

±

0.0

4

Figure 12 PG-SOT223-4 (Plastic Green Small Outline Transistor Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products
and to be compliant with government regulations the device is available as a green
product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable
for Pb-free soldering according to IPC/JEDEC J-STD-020).

Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page: http://www.infineon.com/packages.

Data Sheet 13 Rev. 1.4, 2008-07-10

Dimensions in mm

HITFET BSP 75N

Revision History

2 Revision History

Version Date Changes

Rev. 1.4 2008-07-10 fixed a formatting error in Disclaimer page

Rev. 1.3 2008-04-14 package naming updated to PG-SOT223-4

Rev. 1.2 2007-04-12 released automotive green version

changed package naming from -11 to PG-SOT223-4-7

Rev. 1.1 2007-03-28 Package parameter (humidity and climatic) removed in

Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added

Rev. 1.0 2003-01-10 released production version

Data Sheet 14 Rev. 1.3, 2008-04-14

HITFET BSP 75N

Edition 2008-07-10

Published by Infineon Technologies AG,
81726 Munich, Germany

© Infineon Technologies AG 2008.

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com)

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Data Sheet 15 2008-07-10