Datasheet BSP350-E6327 Specification

Mini PROFET® BSP 350

)

MiniPROFET

•

High-side switch

•

Short-circuit protection

•

Overtemperature protection with hysteresis

•

Overload protection

•

Overvoltage protection

•

Reverse battery protection

•

Switching inductive load

•

Clamp of negative output voltage with inductive loads

•

Maximum current internally limited

Package: SOT 223

Type

BSP 350

1

)

Ordering code

Q67000-S227

Pins:

Maximum Ratings Parameter Symbol Values Unit

Supply voltage Load current self-limited Maximum current through input pin (DC)

see internal circuit diagram

Inductive load switch-off energy dissipation Operating temperature range Storage temperature range

Max. power dissipation (DC)

2)

T

A = 25 °C

Thermal resistance chip - soldering point:

chip - ambient:

V

bb

I

L

I

IN

E

AS

T

j

T

stg

P

tot

R

thJS

2

)

R

thJA

4

3

2

1

123

IN V

bb

OUT V

50 V

I

L(SC

±15 mA

5mJ

-40 ...+150

°C

-55 ...+150

1.7 W 1772K/W

4

bb

A

+ V

bb

2/4

Control

Circuit

R

IN

1

IN

GND

1

)

For 12 V applications only. Reverse load current only limited by connected load.

2

)

BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

Temperature

Sensor

OUT

3

R

L

Semiconductor Group Page 1 of 6 08.04.97

BSP 350

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 2 to 3)

I

= 0.07 A, pin 1 = GND

L

Nominal load current (pin 2 to 3) ISO Standard:

T

= 85 °C

S

Turn-on time to 90% Turn-off time to 10%

R

= 270 Ω

L

Slew rate on 10 to 30% Slew rate off 70 to 40%

V

= 13.5V unless otherwise specified

bb

V

bb = 6 V,

V

OUT

VON = V

,

R

L

,

R

L

-

bb

= 270 Ω

V

OUT

= 0.5 V

T

= 25°C

j

T

= 150°C

j

T

= 25°C

j

V V

OUT OUT

R

ON

I

L(ISO)

t

on

t

off

dV /dt

-dV/dt

on

off

min typ max

--

0.07 -- -- A

--

60 70

4 8 5

10 10

100

5

Ω

µs

140

-- 4 6 V/µs

-- 2 6

Input

OFF state input current

R

= 270 Ω,

L

V

OUT

≤ 0,1V

T

= - 40...+150°C

j

ON state input current, (pin 1 grounded)

T

= - 40...+150°C

j

Operating Parameters

4

Operating voltage (pin 1 grounded)

T

= - 40...+150°C

j

)

Leakage current (pin 2 to 3, pin 1 open)

3

)

T

= 25°C

j

T

=150°C

j

I

IN(off)

I

IN(on)

V

bb(on)

I

bb(off)

-- -- 0.05 mA

-- 0.3 1 mA

4.9 -- 45 V

--

1.2

1

10

µ

A

10

3

)

Driver circuit must be capable to drive currents >1mA.

4

)

Below Vbb=4.5 V typ. without chargepump, V

≈ Vbb - 2 V

out

Semiconductor Group Page 2 08.04.97

BSP 350

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Protection Functions

Current limit (pin 2 to 3)

Thermal overload trip temperature Thermal hysteresis Overvoltage protection Output clamp (ind. load switch off) at

V

OUT = Vbb -

Inductive load switch-off energy dissipation Reverse battery resistor (pin 1 to 2)

Reverse Diode

V

= 13.5V unless otherwise specified

bb

5

)

T

=-40...+150°C

j

V

ON(CL)

T

= 25°C

j

= -40...+150°

j

6

)

I

L(SC)

T

jt

∆

T

V

bbin(AZ)

V

ON(CL)

E

AS

R

IN

min typ max

0.2

0.1

0.5

1

--

1.2

150 -- -- °C

jt

-- 20 -- K

50 56 -- V

--

56

-- V

-- -- 5mJ

-- 1 -- kΩ

A

Continious reverse drain current Pulsed reverse drain current Diode forward on voltage IF = 0.2 A, IIN = ≤ 0.05 mA

T

= 25°C

j

T

= 25°C

j

I I V

S

SM

SD

-- -- 0.2 A

-- -- 0.8 A

-- 0.9 1.2 V

5

)

load current limits onset at IL * Ron approx. 1V short circuit protection: combination of current limit and thermal overload switch off

6

)

while demagnetizing load inductance, dissipated energy is approx.

* L * I

2 L

1

E

AS

=

/

2

* (

V

ON(CL)

V

ON(CL)-Vbb

)

E

AS

=

(V

∫

ON(CL)

* iL(t) dt,

Semiconductor Group Page 3 08.04.97

BSP 350

T

Max allowable power dissipation P

= f (TA,TSP)

tot

P

[W]

tot

8

7

6

5

T

SP

4

3

2

A

1

0

0 25 50 75 100 125 150

TA, TSP[°C]

Typ. on state resistance (Vbb- pin to OUT pin) RON = f (Vbb); IL = 70 mA; Tj = 25°C

RON [Ω]

8

7

6

5

4

3

2

1

0

0 5 10 15 20 25

Vbb [V]

On state resistance (Vbb- pin to OUT pin) RON = f (Tj);Vbb = 13.5 V;IL = 70 mA

RON [Ω]

10

9

8

7

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150

98%

typ

TJ [°C]

Typ. short circuit current I

I

= f(Tj); Vbb = 13.5V

L(SC)

[Α]

LSC

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

-50 -25 0 25 50 75 100 125 150

TJ [°C]

Semiconductor Group Page 4 08.04.97

Typ. short circuit current

b

I

= f(VON); Vbb = 13.5V; Tj = 25°C

L(SC)

I

[Α]

LSC

0.7

Test circuit

2/4

BSP 350

V

on

b

0.6

0.5

0.4

0.3

0.2

0.1

0

02468

VON [V]

Typ. short circuit current I

= f(t); Vbb = 13.5V

L(SC)

no heatsink; Parameter: T I

[mA]

L(SC)

jStart

1000

1

I

in

Turn on conditions

3

V

out

V

in

800

600

Chargepump threshold

400

200

125°C

25°C

-40°C

0

VON = f (Vbb)

4

2

typ.

max.

-0,5 0,5 1,5 2,5 3,5 4,5 5,5

t[s]

2 4 68

Semiconductor Group Page 5 08.04.97

Package:

all dimensions in mm. SOT 223/3:

BSP 350

Edition 7.97

Published by Siemens AG, Bereich Halbleiter Vetrieb,

Werbung, Balanstraße 73, 81541 München

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Semiconductor Group Page 6 08.04.97