Datasheet BSP296NH6327XTSA1 Specification

BSP296N

OptiMOS™ Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level (4.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

TA=25 °C

1.2 A

TA=70 °C

0.9

Pulsed drain current

I

D,pulse

TA=25 °C

4.6

Avalanche energy, single pulse

E

AS

ID=1.2 A, RGS=25 W

15.0 mJ

Reverse diode dv/dt dv/dt

ID=1.2 A, VDS=80 V, di/dt=200 A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

P

tot

TA=25 °C

W

Operating and storage temperature

Tj, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM 0 (<250V)

Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56

Value

1.8

PG-SOT223

Type

Package

Tape and Reel Information

Marking

Halogen-Free

Packing

BSP296N

SOT223

H6327: 1000 pcs/ reel

BSP296N

Yes

Non dry

V

DS

100

V

R

DS(on),max

VGS=10 V

0.6 W VGS=4.5 V

0.8

ID 1.2

A

Product Summary

Rev 2.0 page 1 2013-04-04

BSP296N

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - soldering point

R

thJS

- - 25 K/W

Thermal resistance

R

thJA

minimal footprint - - 110

junction - ambient

6 cm2 cooling area

1)

- - 70

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSSVGS

=0 V, ID=250 µA

100 - - V

Gate threshold voltage

V

GS(th)

VDS=Vgs V, ID=100 µA

0.8 1.4 1.8

Drain-source leakage current

I

DSS

VDS=100 V, VGS=0 V, Tj=25 °C

- - 0.1

mA

VDS=100 V, VGS=0 V, Tj=150 °C

- - 10

Gate-source leakage current

I

GSS

VGS=20 V, VDS=0 V

- - 10 nA

Drain-source on-state resistance

R

DS(on)

VGS=4.5 V, ID=0.95 A

- 371 800

mW

VGS=10 V, ID=1.2 A

- 329 600

Transconductance

g

fs

|VDS|>2|ID|R

DS(on)max

,

ID=0.9 A

2.66 - S

Values

1)

Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thick) copper area for drain

connection. PCB is vertical in still air.

Rev 2.0 page 2 2013-04-04

BSP296N

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 114.8 152.7 pF

Output capacitance

C

oss

- 19.7 26.3

Reverse transfer capacitance

C

rss

- 9.8 14.7

Turn-on delay time

t

d(on)

- 3.5 5.3 ns

Rise time

t

r

- 3.8 5.7

Turn-off delay time

t

d(off)

- 18.4 27.6

Fall time

t

f

- 5.2 7.8

Gate Charge Characteristics Gate to source charge

Q

gs

- 0.27 0.4 nC

Gate to drain charge

Q

gd

- 1.45 2.2

Gate charge total

Q

g

- 4.5 6.7

Gate plateau voltage

V

plateau

- 2.4 - V

Reverse Diode

Diode continous forward current

I

S

- - 1.2 A

Diode pulse current

I

S,pulse

- - 4.6

Diode forward voltage

V

SD

VGS=0 V, IF=1.2 A, Tj=25 °C

- 0.85 1.1 V

Reverse recovery time

t

rr

- 27 40.5 ns

Reverse recovery charge

Q

rr

- 30 45 nC

VR=50 V, IF=1.2 A, diF/dt=100 A/µs

TA=25 °C

Values

VGS=0 V, VDS=25 V, f=1 MHz

VDD=50 V, VGS=10 V, ID=1.2 A, R

G,ext

=6 W

VDD=50 V, ID=1.2 A, VGS=0 to 10 V

Rev 2.0 page 3 2013-04-04

BSP296N

1 Power dissipation 2 Drain current

P

tot

=f(TA) ID=f(TA); V

GS

≥10 V

3 Safe operating area 4 Max. transient thermal impedance

ID=f(VDS); TA=25 °C; D=0 Z

thJA

=f(tp)

parameter: t

p

parameter: D=tp/T

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

-4 10-3 10-2 10-1 100 101 102

10

0

101 10

2

Z

thJA

[K/W]

tp [s]

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0 40 80 120 160

P

tot

[W]

TA [°C]

0

0.25

0.5

0.75

1

1.25

0 40 80 120 160

I

D

[A]

TA [°C]

1 µs

10 µs

100 µs

1 ms

10 ms

DC

0.001

0.01

0.1

1

10

1 10 100 1000

I

D

[A]

VDS [V]

Rev 2.0 page 4 2013-04-04

BSP296N

5 Typ. output characteristics 6 Typ. drain-source on resistance

ID=f(VDS); Tj=25 °C R

DS(on)

=f(ID); Tj=25 °C

parameter: V

GS

parameter: V

GS

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|R

DS(on)max

gfs=f(ID); Tj=25 °C

0

1

2

3

4

5

6

0.0 0.8 1.6 2.4 3.2 4.0 4.8

g

fs

[S]

ID [A]

25 °C

150 °C

0

0.8

1.6

2.4

3.2

4

4.8

0 1 2 3 4

I

D

[A]

VGS [V]

2.8 V

3 V

3.3 V

3.5 V

4 V

4.5 V 10 V

0

250

500

750

1000

0 0.8 1.6 2.4 3.2 4 4.8

R

DS(on)

[mW]

ID [A]

2.8 V

3 V

3.3 V

3.5 V

4 V

10 V

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

3.6

4

4.4

4.8

0 2 4 6 8

I

D

[A]

VDS [V]

Rev 2.0 page 5 2013-04-04

BSP296N

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

DS(on)

=f(Tj); ID=1.2 A; VGS=10 V V

GS(th)

=f(Tj); VDS=VGS; ID=100 µA

parameter: I

D

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)

parameter: T

j

typ

max

0

200

400

600

800

1000

1200

1400

-60 -40 -20 0 20 40 60 80 100 120 140 160

R

DS(on)

[mW]

Tj [°C]

0

0.4

0.8

1.2

1.6

2

2.4

-60 -10 40 90 140

V

GS(th)

[V]

Tj [°C]

Ciss

Coss

Crss

10

0

10

1

10

2

10

3

0 10 20 30 40 50 60 70 80 90 100

C [pF]

VDS [V]

25 °C

150 °C

25 °C, 98%

150 °C, 98%

10

-2

10

-1

10

0

10

1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

I

F

[A]

VSD [V]

typ

max

min

Rev 2.0 page 6 2013-04-04

BSP296N

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 W

VGS=f(Q

gate

); ID=1.2 A pulsed

parameter: T

j(start)

parameter: V

DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

BR(DSS)

=f(Tj); ID=250 µA

80

84

88

92

96

100

104

108

112

116

120

-60 -20 20 60 100 140 180

V

BR(DSS)

[V]

Tj [°C]

20 V

50 V

80 V

0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4 5

V

GS

[V]

Q

gate

[nC]

25 °C

100 °C

125 °C

100 101 102 10

3

10

-1

10

0

10

1

I

AV

[A]

tAV [µs]

V

GS

Q

gate

V

gs(th)

Q

g(th)Qgs

Q

gdQsw

Q

g

Rev 2.0 page 7 2013-04-04

BSP296N

SOT223

Package Outline:

Footprint: Packaging:

Dimensions in mm

Rev 2.0 page 8 2013-04-04

BSP296N

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

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or other persons may be endangered.

Rev 2.0 page 9 2013-04-04