Datasheet BSP130 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BSP130

N-channel enhancement mode
vertical D-MOS transistor

Product specification
File under Discrete Semiconductors, SC13b

April 1995

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

FEATURES

• Direct interface to C-MOS, TTL,
etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 envelope, intended for use
as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.

PINNING - SOT223

PIN DESCRIPTION

1 gate
2 drain
3 source
4 drain

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

drain-source
voltage

I

D

P

tot

DC drain current − 300 mA
total power

dissipation
±V
R

DS(on)

GSO

gate-source voltage open drain − 20 V

drain-source

on-resistance
V

GS(off)

gate-source cut-off

voltage

handbook, halfpage

123

Top view

up to T

amb

ID = 250 mA;

= 10 V

V

GS

ID = 1 mA;
VDS = V

4

GS

g

MAM054

BSP130

− 300 V

= 25 °C − 1.5 W

− 8 Ω

0.8 2 V

d

s

Marking code

BSP130.

April 1995 2

Fig.1 Simplified outline and symbol.

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSP130

D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GSO

I

D

I

DM

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-a

Note

1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm

drain-source voltage − 300 V
gate-source voltage open drain − 20 V
DC drain current − 300 mA
peak drain current − 1.4 A
total power dissipation up to T

= 25 °C; note 1 − 1.5 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

from junction to ambient; note 1 83.3 K/W

2

.

STATIC CHARACTERISTICS

= 25 °C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

±I

GSS

V

GS(th)

R

DS(on)

I

DSS

 Y

 transfer admittance ID = 250 mA; VDS = 25 V 200 380 − mS

fs

C

iss

drain-source breakdown voltage ID = 10 µA; VGS = 0 300 −−V
gate-source leakage current ±VGS = 20 V; VDS = 0 −−100 nA
gate-source threshold voltage ID = 1 mA; VDS = V

GS

0.8 − 2V

drain-source on-resistance ID = 20 mA; VGS = 2.4 V − 7.9 14 Ω

I

= 250 mA; VGS = 10 V − 6.7 8 Ω

D

drain-source leakage current VDS = 240 V; VGS = 0 −−100 nA

input capacitance VDS = 25 V; VGS = 0;

− 57 90 pF

f = 1 MHz

C

oss

output capacitance VDS = 25 V; VGS = 0;

− 15 30 pF

f = 1 MHz

C

rss

feedback capacitance VDS = 25 V; VGS = 0;

− 2.6 15 pF

f = 1 MHz
Switching times (see Figs 2 and 3)
t

on

turn-on time ID = 250 mA; VDD = 50 V;

− 2.5 10 ns

VGS= 0 to 10 V
t

off

turn-off time ID = 250 mA; VDD = 50 V;

− 17 30 ns

VGS= 10 to 0 V

April 1995 3

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

handbook, halfpage

10 V

0 V

50 Ω

VDD = 50 V

I

D

MBB691

handbook, halfpage

INPUT

OUTPUT

10 %

t

on

90 %

90 %

BSP130

10 %

t

off

MBB692

handbook, halfpage

2

P

tot

(W)

1.5

1

0.5

0

0 50 100

Fig.2 Switching times test circuit.

MRC218

150

Tj (°C)

200

Fig.3 Input and output waveforms.

150

handbook, halfpage

C

(pF)

100

50

0

0

VGS= 0; f= 1MHz; Tj=25°C.

525

C

C
C

10 15 20

MRC214

iss

oss
rss

VDS (V)

Fig.4 Power derating curve.

April 1995 4

Fig.5 Capacitance as a function of drain-source

voltage, typical values.

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

1.2

handbook, halfpage

I

D

(A)

0.8

0.4

0

0

P = 1.5 W

4812

MRC217

VGS = 10 V

5 V
4 V

3.5 V

3 V

2.5 V

2 V

VDS (V)

1.2

handbook, halfpage

I

D

(A)

0.8

0.4

0

04 12

8

BSP130

MRC223

VGS (V)

Tj=25°C.

Fig.6 Typical output characteristics.

30

handbook, halfpage

R

DSon

(Ω)

20

10

0

−2

10

VGS = 2 V

VDS= 10 V; Tj=25°C.

Fig.7 Typical transfer characteristics.

MRC219

3.5 V

3 V

2.5 V
4 V

5 V

10 V

−1

11010

ID (A)

25

handbook, halfpage

R

DSon

(Ω)

20

15

10

5

0

010

246

8

VGS (V)

MRC220

Tj=25°C.

Fig.8 Drain-source on-resistance as a function of

drain current, typical values.

April 1995 5

VDS= 100 mV; Tj=25°C.

Fig.9 Drain-source on-resistance as a function of

gate-source voltage, typical values.

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

2

10

handbook, full pagewidth

R

th j-a

(K/W)

10

δ =

0.75

0.5

0.2

10

−1

10

0.1

0.05

0.02

0.01

1

0

−5

−4

10

−3

10

−2

10

BSP130

MRC221

t

P

t

p

T

−1

10

1

10 10

2

δ =

tp (s)

p

T

t

3

10

10

handbook, halfpage

ID

(A)

1

1

−

10

P

2

−

10

3

−

10

1

δ = 0.01; T
(1) R

DS(on)

amb

limitation.

Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.

MRC222

2

tp =

10 µs
100 µs
1 ms
10 ms

100 ms
1s

VDS (V)

3

10

t

p

= 25 °C.

(1)

t

p

=

δ

T

t

T

10 10

DC

Fig.11 SOAR curve.

April 1995 6

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

100

(1)

(2)

Tj (°C)

MRC215

150

2.5

handbook, halfpage

k

2

1.5

1

0.5

0

−50 0

50

1.25

handbook, halfpage

k

1

0.75

0.5

0.25

0

−50 0 50

100

Tj (°C)

BSP130

MRC216

150

at T

R

DS(on)

k

-----------------------------------------=

R

DS(on)

Typical R

DS(on)

= 250 mA; VGS=10V.

(1) I

D

= 20 mA; VGS= 2.4 V.

(2) I

D

j

at 25 °C

;

Fig.12 Temperature coefficient of drain-source

on-resistance.

at T

V

GS(th)

GS(th)

j

at 25 °C

at 1 mA.

.=

----------------------------------------- -

k

V

GS(th)

Typical V

Fig.13 Temperature coefficient of gate-source

threshold voltage.

April 1995 7

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSP130

D-MOS transistor

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

D

c

y

b

1

4

E

H

E

AB

X

v M

A

132

e

1

e

DIMENSIONS (mm are the original dimensions)

UNIT A1b

mm

A

1.8

1.5

OUTLINE
VERSION

SOT223

0.10

0.01

cD

b

p

1

0.80

3.1

2.9

0.32

0.22

0.60

IEC JEDEC EIAJ

b

p

6.7

6.3

w M

B

0 2 4 mm

scale

e1HELpQywv

e

E

3.7

3.3

REFERENCES

4.6

2.3

7.3

6.7

A

1.1

0.7

Q

A

1

L

p

detail X

0.95

0.85

0.1 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

96-11-11
97-02-28

April 1995 8

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSP130

D-MOS transistor

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

April 1995 9

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

NOTES

BSP130

April 1995 10

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

NOTES

BSP130

April 1995 11

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Printed in The Netherlands 137107/1200/01/pp12 Date of release: April 1995 Document order number: 9397 75002477