Datasheet BSN274A, BSN274 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BSN274; BSN274A

N-channel enhancement mode
vertical D-MOS transistor

Product specification
File under Discrete Semiconductors, SC13b

April 1995

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

FEATURES

• Direct interface to C-MOS, TTL,
etc., due to low threshold voltage

• High speed switching

• No secondary breakdown

DESCRIPTION

Silicon n-channel enhancement
mode vertical D-MOS transistor in
TO-92 variant envelope and intended
for use as a line current interruptor in
telephone sets and for applications in
relay, high speed and line transformer
drivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

DS

I

D

R

DS(on)

V

GS(th)

drain-source voltage 270 V
drain current (DC) 250 mA
drain-source on-resistance 8 Ω
threshold voltage 2 V

PINNING (BSN274)

PIN DESCRIPTION

1 gate
2 drain
3 source

PINNING (BSN274A)

PIN DESCRIPTION

1 source
2 gate
3 drain

BSN274; BSN274A

PIN CONFIGURATION - TO-92 VARIANT

handbook, halfpage

1

Note: Other pinnings are available on request.

d

2

3

g

MAM146

s

Fig.1 Simplified outline and symbol.

April 1995 2

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSN274; BSN274A

D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GSO

I

D

I

DM

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER VALUE UNIT

R

th j-a

Notes

1. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum

10 mm × 10 mm.

drain-source voltage − 270 V
gate-source voltage open drain − 20 V
drain current DC − 250 mA
drain current peak − 1A
total power dissipation up to T

=25°C (note 1) − 1W

amb

storage temperature range −65 150 °C
operating junction temperature − 150 °C

from junction to ambient (note 1) 125 K/W

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

drain-source breakdown voltage VGS=0

270 −−V

ID=10µA

I

DSS

drain-source leakage current VDS= 220 V

−− 1µA

VGS=0

±I

GSS

gate-source leakage current ±VGS=20V

−− 100 nA

VDS=0

V

GS(th)

R

DS(on)

gate threshold voltage ID=1mA

VDS=V

GS

drain-source on-resistance ID= 250 mA

0.8 − 2V

− 6.5 8 Ω

VGS=10V

R

DS(on)

drain-source on-resistance ID=20mA

− 914Ω

VGS= 2.4 V

 transfer admittance ID= 250 mA

Y

fs

200 400 − mS

VDS=25V

C

iss

input capacitance VDS=25V

− 65 90 pF
VGS=0
f=1MHz

C

oss

output capacitance VDS=25V

− 20 30 pF
VGS=0
f=1MHz

April 1995 3

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSN274; BSN274A

D-MOS transistor

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

rss

Switching times (see Figs 2 and 3)
t

on

t

off

handbook, halfpage

feedback capacitance VDS=25V

VGS=0
f=1MHz

switching-on time ID= 250 mA

VDD=50V
VGS= 0 to 10 V

switching-off time ID= 250 mA

VDD=50V
VGS= 0 to 10 V

VDD = 50 V

handbook, halfpage

− 515pF

− 510ns

− 20 30 ns

90 %

INPUT

10 V

0 V

50 Ω

I

D

MSA631

Fig.2 Switching time test circuit.

10 %

90 %

OUTPUT

t

on

Fig.3 Input and output waveforms.

10 %

t

off

MBB692

April 1995 4

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSN274; BSN274A

D-MOS transistor

PACKAGE OUTLINES

Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant

c

L

2

E

d

1
2

D

A L

b

e

1

e

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Notes

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

b

5.2

0.48

mm

5.0

OUTLINE
VERSION

SOT54 variant TO-92 SC-43

0.40

0.66

0.56

c

D

d

E

4.2

3.6

e

2.54

b

1

0.45

4.8

4.4

1.7

1.4

REFERENCES

0.40

IEC JEDEC EIAJ

e

1.27

1

L

14.5

12.7

L

1

L

1

max

2.5 2.5

(1)

L

2

max

EUROPEAN

PROJECTION

ISSUE DATE

97-04-14

April 1995 5

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSN274; BSN274A

D-MOS transistor

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

April 1995 6

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

NOTES

BSN274; BSN274A

April 1995 7

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Printed in The Netherlands 137107/00/01/pp8 Date of release: April 1995 Document order number: 9397 750 02463