Datasheet BSN254A, BSN254 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BSN254
BSN254A

N-channel enhancement mode
vertical D-MOS transistors

Product specification
File under Discrete Semiconductors, SC13b

April 1995

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

DESCRIPTION

N-channel enhancement mode
vertical D-MOS transistors in TO-92
variant envelope and designed for
use as line current interrupters in
telephone sets and for application in
relay, high-speed and
line-transformer drivers.

FEATURES

• Direct interface to C-MOS, TTL,
etc.

• High-speed switching

• No second breakdown

• Low R

DS (on)

QUICK REFERENCE DATA

Drain-source voltage V
Drain current (DC) I
Total power dissipation up to T
Drain-source on-resistance

ID= 300 mA; VGS=10V R

Gate-source threshold voltage V

PINNING (BSN254)

1 = gate
2 = drain
3 = source

PINNING (BSN254A)

1 = source
2 = gate
3 = drain

=25°CP

amb

DS

D

tot

DS(on)

GS(th)

BSN254

BSN254A

max. 250 V
max. 300 mA
max. 1 W

typ.
max.

max. 2 V

5.0

7.0ΩΩ

PIN CONFIGURATION - TO-92 VARIANT

handbook, halfpage

1

Note: Various pinnings are available on request.

2

3

g

MAM146

Fig.1 Simplified outline and symbol.

d

s

April 1995 2

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

BSN254

BSN254A

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage V
Gate-source voltage (open drain) ± V
Drain current (DC) I
Drain current (peak) I
Total power dissipation up to T

=25°C (note 1) P

amb

D
DM

Storage temperature range T
Junction temperature T

DS

GSO

tot
stg
j

max. 250 V
max. 20 V
max. 300 mA
max. 1.2 A
max. 1 W

−65 to + 150 °C
max. 150 °C

THERMAL RESISTANCE

From junction to ambient (note 1) R

th j-a

= 125 K/W

Note

1. Device mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm × 10 mm.

CHARACTERISTICS

=25°C unless otherwise specified

T

j

Drain-source breakdown voltage

=10µA; VGS=0 V

D

(BR) DSS

min. 250 VI

Drain-source leakage current

= 200 V; VGS=0 I

DS

Gate-source leakage current

=20V; VDS=0 ±I

GS

Gate threshold voltage

I

= 1 mA; VDS=V

D

GS

Drain-source on-resistance

= 300 mA; VGS=10V R

I

D

ID= 20 mA; VGS= 2.4 V R

Transfer admittance

ID= 300 mA; VDS=25V Yfs

Input capacitance at f = 1 MHz

= 25 V; VGS=0 C

V

DS

DSS

V

GS(th)

DS (on)

DS(on)

iss

GSS

max. 1 µAV

max. 100 nA± V

min.
max.

typ.
max.

0.8

2.0VV

5.0

7.0ΩΩ

max. 10 Ω

min.
typ.

typ.

200
400mSmS

6590pF

max.

pF

April 1995 3

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

Output capacitance at f=1MHz

= 25 V; VGS=0 C

DS

Feedback capacitance at f=1MHz

= 25 V; VGS=0 C

V

DS

Switching times (see Figs 2 and 3)

I

= 250 mA; VDD=50V; VGS= 0 to 10 V t

D

handbook, halfpage

VDD = 50 V

oss

rss

on

t

off

handbook, halfpage

INPUT

typ.
max.

typ.
max.

typ.
max.

typ.
max.

BSN254

BSN254A

2030pF

pFV

515pF

pF

510ns

ns

2030ns

ns

90 %

10 V

1.2

handbook, halfpage

P

tot

(W)

0.8

0.4

I

0 V

50 Ω

D

MSA631

Fig.2 Switching times test circuit.

MRC238

OUTPUT

Fig.3 Input and output waveforms.

handbook, halfpage

2

I

D

(A)

1.6

1.2

0.8

10 %

t

on

90 %

VGS = 10 V

6 V
5 V

4 V

t

off

10 %

MBB692

MDA712

0

0

50 100 200150

T

amb

(°C)

Fig.4 Power derating curve.

April 1995 4

0.4

0

010

246

3 V

2 V

8

VDS (V)

Fig.5 Output characteristics; Tj=25°C; typical

values.

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

8

VGS (V)

MDA713

handbook, halfpage

2

I

D

(A)

1.6

1.2

0.8

0.4

0

010

246

4

10

handbook, halfpage

I

D

(mA)

3

10

2

10

10

VGS = 10 V

5 V
4 V

3 V

BSN254

BSN254A

MDA714

12

R

DSon

(Ω)

160 48

Fig.6 Transfer characteristic; VDS=10V;

Tj=25°C; typical value.

iss

oss
rss

20

VDS (V)

MDA715

200

handbook, halfpage

C

(pF)

160

120

80

40

0

025

C

C

C

51015

Fig.8 Capacitances as a function of drain-source

voltage; VGS= 0; f = 1 MHz; Tj=25°C;
typical values.

Fig.7 On-resistance as a function of drain current;

Tj=25°C; typical values.

100

MDA716

Tj (°C)

1.4

handbook, halfpage

k

1.2

1

0.8

0.6

−50 0 50

Fig.9

at T

V

GS(th)

----------------------------------------

k

V

GS(th)

V

at 1 mA; typical values

GS(th)

j

at 25 °C

;=

150

April 1995 5

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

100

MDA717

(2)

Tj (°C)

2.8
k

2.4

2

1.6

1.2

0.8

0.4

−50 0 50 150

(1)

Fig.10

R

--------------------------------------------

k

R

DS (on)

DS on()

at 25 °C

at T

j

;=

BSN254

BSN254A

typical values.

April 1995 6

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

BSN254

BSN254A

PACKAGE OUTLINES

Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant

c

L

2

E

d

1
2

D

A L

b

e

1

e

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Notes

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

b

5.2

0.48

mm

5.0

OUTLINE
VERSION

SOT54 variant TO-92 SC-43

0.40

0.66

0.56

c

D

d

E

4.2

3.6

e

2.54

b

1

0.45

4.8

4.4

1.7

1.4

REFERENCES

0.40

IEC JEDEC EIAJ

e

1.27

1

L

14.5

12.7

L

1

L

1

max

2.5 2.5

(1)

L

2

max

EUROPEAN

PROJECTION

ISSUE DATE

97-04-14

April 1995 7

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

BSN254

BSN254A

April 1995 8

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

NOTES

BSN254

BSN254A

April 1995 9

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

NOTES

BSN254

BSN254A

April 1995 10

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistors

NOTES

BSN254

BSN254A

April 1995 11

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Printed in The Netherlands 137107/00/01/pp12 Date of release: April 1995 Document order number: 9397 750 02462