Datasheet BSN20W Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BSN20W

N-channel enhancement mode
vertical D-MOS transistor

Product specification
File under Discrete Semiconductors, SC13b

1997 Jun 20

Philips Semiconductors Product specification

N-channel enhancement mode
vertical D-MOS transistor

FEATURES

• Direct interface to C-MOS, TTL, etc.

• High-speed switching

• No secondary breakdown.

APPLICATIONS

• Thin and thick film circuits

• General purpose fast switching applications.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor
in a 3 pin plastic SOT323 SMD package.

CAUTION

The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.

PINNING - SOT323

PIN SYMBOL DESCRIPTION

1 g gate
2 s source
3 d drain

handbook, halfpage

12

Top view

Marking code: M8t.

3

g

MAM356

Fig.1 Simplified outline and symbol.

BSN20W

d

s

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V
V
I

D

R
P

DS
GSth

DSon
tot

drain-source voltage (DC) 50 V
gate-source threshold voltage 1.8 V
drain current (DC) 80 mA
drain-source on-state resistance 15 Ω
total power dissipation T

≤ 25 °C; note 1 200 mW

amb

Note

1. Device mounted on a printed-circuit board.

1997 Jun 20 2

Philips Semiconductors Product specification

N-channel enhancement mode

BSN20W

vertical D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GSO

I

D

I

DM

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note to the Limiting values and Thermal characteristics

1. Device mounted on a printed-circuit board.

drain-source voltage (DC) − 50 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) − 80 mA
peak drain current − 300 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

thermal resistance from junction to ambient note 1 625 K/W

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

GSS

R

DSon

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS= 0; ID=10µA50−−V
gate-source threshold voltage VGS=VDS; ID= 1 mA 0.4 − 1.8 V
drain-source leakage current VGS= 0; VDS=40V −−1µA
gate-source leakage current VGS= ±20 V; VDS=0 −−±100 nA
drain-source on-state resistance VGS= 10 V; ID=80mA − 815Ω

=5V; ID=80mA − 14 20 Ω

V

GS

V

= 2.5 V; ID=10mA − 18 30 Ω

GS

input capacitance VGS= 0; VDS= 10 V; f = 1 MHz − 815pF
output capacitance VGS= 0; VDS= 10 V; f = 1 MHz − 715pF
reverse transfer capacitance VGS= 0; VDS= 10 V; f = 1 MHz − 25pF

Switching times

t

on

turn-on time VGS= 0 to 10 V; VDD=20V;

− 25ns

ID=80mA

t

off

turn-off time VGS=10to0V; VDD=20V;

− 510ns

ID=80mA

1997 Jun 20 3

Philips Semiconductors Product specification

N-channel enhancement mode
vertical D-MOS transistor

150

T

MDA183

amb

300

handbook, halfpage

P

tot

(mW)

200

100

0

050

Device mounted on a printed-circuit board.

100

Fig.2 Power derating curve.

BSN20W

30

handbook, halfpage

C

(pF)

20

10

0

200

o

(

C)

0 5 10 15 20 25

VGS= 0; Tj=25°C; f = 1 MHz.
(1) C

.

iss

(2) C

.

oss

(3) C

.

rss

Fig.3 Capacitance as a function of drain-source

voltage; typical values.

MRA781

(1)
(2)

(3)

VDS (V)

handbook, halfpage

500

I

D

(mA)

400

300

200

100

0

04812

Tj=25°C.

GS

MRA782

= 10 VV

7 V

5 V

4 V

3 V

2.5 V

VDS (V)

Fig.4 Output characteristics; typical values.

1997 Jun 20 4

handbook, halfpage

500

I

D

(mA)

400

300

200

100

0

0246810

VDS= 10 V; Tj=25°C.

Fig.5 Transfer characteristics; typical values.

MRA783

VGS (V)

Philips Semiconductors Product specification

N-channel enhancement mode
vertical D-MOS transistor

24

handbook, halfpage

R

DSon

(Ω)

16

8

0

1

Tj=25°C.
(1) VGS= 2.5 V.
(2) VGS=5V.
(3) VGS=10V.

(1)

(2)

(3)

2

10

10

ID (mA)

MDA163

BSN20W

80

handbook, halfpage

R

DSon

(Ω)

60

40

20

3

10

0

02 10

VDS= 0.1 V; Tj=25°C.

4

68

MDA162

VGS (V)

Fig.6 Drain-source on-state resistance as a

function of drain current; typical values.

1.2

handbook, halfpage

k

1.1

1

0.9

0.8

0.7

=

k

-------------------------------------­V

Typical V

V

GSth

GSth

at 25°C

GSth

at T

j

at 1 mA.

0 50 100 150−50

Tj (

MRA785

o

C)

Fig.7 Drain-source on-state resistance as a function

of gate-source voltage; typical values.

handbook, halfpage

2

k

1.6

1.2

0.8

0.4

R

DSon

k

=

----------------------------------------­R

DSon

Typical R
(1) ID= 10 mA; VGS= 2.5 V.
(2) ID= 100 mA; VGS=10V.

DSon

0 50 100 150−50

at T

j

at 25 °C

at 100 mA / 10 V.

MRA784

(2)

(1)

Tj (oC)

Fig.8 Temperature coefficient of gate-source

threshold voltage.

1997 Jun 20 5

Fig.9 Temperature coefficient of drain-source

on-state resistance.

Philips Semiconductors Product specification

N-channel enhancement mode

BSN20W

vertical D-MOS transistor

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

E

H

E

AB

X

v M

A

12

e

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.8

max

0.1

1

b

p

0.4

0.3

b

1

p

e

cD

0.25

2.2

0.10

1.8

A

A

1

B

w M

0 1 2 mm

scale

e

H

E

1.35

1.15

1.3

e

1

0.65

E

2.2

2.0

L

p

0.45

0.15

L

p

detail X

Qwv

0.23

0.13

0.20.2

Q

c

OUTLINE
VERSION

SOT323 SC-70

IEC JEDEC EIAJ

REFERENCES

1997 Jun 20 6

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

N-channel enhancement mode

BSN20W

vertical D-MOS transistor

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jun 20 7

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© Philips Electronics N.V. 1997 SCA54
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Printed in The Netherlands 137107/00/01/pp8 Date of release: 1997 Jun 20 Document order number: 9397 750 02266