Page 1
q
p
Product Summary
V
R
(BR)DSS
50V
1.8 @ V
2.0 @ VGS = 4.5V
DS(ON)
GS
= 10V
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
Backlighting
DC-DC Converters
Power Management Functions
NEW PRODUCT
SOT23
Top View
I
D
500mA
450mA
Drain
Gate
E
uivalent Circuit
BSN20
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
D
Source
G
To
S
View
e3
Ordering Information (Note 5)
Part Number Qualification Case Packaging
BSN20-7 Standard SOT23 3000/Tape & Reel
BSN20Q-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N20
Chengdu A/T Site
YM
N20
Shanghai A/T Site
BSN20
Document number: DS31898 Rev. 8 - 2
N20 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
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September 2013
© Diodes Incorporated
Page 2
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
@ T
= +25°C (Note 6)
SP
Steady
State
T
= +25°C
A
= +100°C
T
A
Pulsed Drain Current @ TSP = +25°C (Notes 6 & 7) IDM
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @TA = +25°C (Note 6) PD
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation, @TSP = +25°C (Note 6) PD
Thermal Resistance, @TSP = +25°C (Note 6)
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics (@T
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance |Yfs| 40 320
Diode Forward Voltage VSD
Source (diode forward) Current IS
Peak Source (diode forward) Current ISM
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance Rg
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
Turn-On Delay Time t
Turn-On Rise Time tr
Turn-Off Delay Time t
Turn-Off Fall Time tf
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
.
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
50
BV
DSS
DSS
I
GSS
V
GS(th)
R
DS(ON)
0.4 1.0 1.5 V
C
iss
C
oss
C
rss
D(on)
D(off)
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
V
DSS
V
GSS
I
D
50 V
20
500
300
1.2 A
600 mW
R
JA
200
920 mW
R
JSP
T
, T
J
STG
0.5 µA
100
136 °C/W
-55 to +150 °C
V
VGS = 0V, ID = 250µA
V
= 50V, VGS = 0V
DS
nA
V
= 20V, V
GS
DS
= 0V
VDS = VGS, ID = 250µA
V
1.3
1.6
1.8
2.0
mS VDS = 10V, ID = 0.1A
= 10V, ID = 0.22A
GS
= 4.5V, ID = 0.1A
V
GS
1.0 1.5 V VGS = 0V, IS = 180mA
194 mA
1.2 A
= +25°C
T
SP
T
= +25°C (Notes 3 & 4)
SP
21.8 40 pF
5.6 15 pF
V
DS
= 10V, V
= 0V, f = 1.0MHz
GS
3.3 10 pF
49
800
100
100
2.93
2.99
9.45
8.3
VDS =0V, VGS = 0V, f = 1MHz
pC
V
= 10V, VDD = 25V,
pC
pC
GS
I
= 250mA
D
ns
V
= 30V, V
ns
ns
ns
DD
= 150, R
R
L
= 0.2A
I
D
= 10V,
GEN
GEN
= 50,
BSN20
V
mA
C/W
BSN20
Document number: DS31898 Rev. 8 - 2
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© Diodes Incorporated
Page 3
O
R
C
ONT
UOUS CUR
RENT
R
CUR
RENT
T
R
T T
HER
R
TANC
C
NEW PRODUCT
BSN20
120
120
(%)
100
80
60
40
D
P , POWER DISSIPATION (%)
20
0
25 50 75 100 125 150 175
T , SOLDER POINT TEMPERATURE (°C)
S
Fig 1. No r m al ized To tal Power Dissip at ion
as a Func tion of Solder Point Tempe r at ure
1
R
ds(on)
Limited
P = DCW
(A)
AIN
D
I, D
0.1
0.01
P = 10sW
P = 1sW
P = 100msW
P = 10msW
P = 1msW
P = 100µsW
P = 10µsW
100
80
IN
60
40
MALIZED
20
0
DER
I, N
0 50 75 100 125 150 175
25
T , SOLDER POINT TEMPERATURE (°C)
S
Fig 2. Norm alize d Continuo us Curre nt
vs. Solder Point Temperature
T = 150°C
J(MAX)
T = 25°C
A
0.001
0.1 1 10 100
Single Pulse
V , DRAIN-SOURE VOLTAGE (V)
DS
Fig. 3 SOA, Safe Operation Area
1,000
/W)
E (°
100
ESIS
MAL
D = 0.5
D = 0.3
D = 0.1
10
D = 0.05
ANSIEN
th(j-sp)
Z,
D = 0.02
D = Single Pulse
Duty Cycle, D = t /t
12
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , PULSE DURATION TIME (s)
1
Fig. 4 Transient Ther m al Response
BSN20
Document number: DS31898 Rev. 8 - 2
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Page 4
R
OUR
CE C
U
R
R
T
R
OUR
CE CUR
R
T
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
CE ON-R
TANC
GAT
T
H
RESH
OLD VO
TAG
R
OUR
C
CUR
R
T
NEW PRODUCT
BSN20
0.7
0.6
(A)
EN
0.5
0.4
0.3
V = 10V
GS
V = 4.0V
GS
V = 3.0V
GS
V = 4.5V
GS
(A)
EN
0.8
0.7
0.6
0.5
0.4
V = 5V
DS
0.3
0.2
AIN-S
D
0.1
I, D
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Drain-Source Current vs. Drain-Source Voltage
DS
10
9
E ( )
8
7
ESIS
6
5
4
AIN-S
0.2
D
I, D
0.1
150 C
°
25 C
°
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 6 Transfer Characte r i s t ics
2.5
E ( )
2.0
ESIS
V = 10V
GS
m
I = 500 A
D
1.5
1.0
V = 4.5V
GS
I = A
200m
D
3
V = .5V
2
, D
1
DS(ON)
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
GS
V = 4.5V
I , DRAIN-CURRENT (A)
D
V = 4.VGS0
3
GS
V = VGS10
Fig. 7 Drain-S ou r ce On-Re sistanc e vs. Drai n- C urrent
2.4
2.0
E (V)
L
1.6
AIN-S
0.5
, D
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 8 Drain-Source On-Resistance vs. Junction Temperature
0.5
0.4
(A)
EN
0.3
1.2
I = 1.0mA
D
E
0.2
0.8
E
0.4
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Fig. 9 Gate Threshold Voltage vs. Junction Temperature
I = A
250µ
D
J
AIN-S
150 C
0.1
D
I, D
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLT AGE (V)
GS
125 C
°
°
-55 C
°
25 C
85 C
°
°
Fig. 10 Transfer Characteristics
BSN20
Document number: DS31898 Rev. 8 - 2
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Page 5
C, CAPACITAN
C
F
OUR
CE CUR
REN
T
NEW PRODUCT
BSN20
0.8
0.7
0.6
25 C
°
0.5
150 C
0.4
°
0.3
0.2
0.1
fs
g , FORWARD TRANSCONDUCTANCE (s)
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I , DRAIN-CURRENT (A)
D
Fig. 11 Typical Transfer Characteristic
1.0
40
35
30
)
25
E (p
20
C
iss
15
10
C
5
0
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
oss
C
rss
Fig. 12 Capacitance vs. Drain-Source Voltage
0.9
0.8
(A)
0.7
0.6
150 C
°
25 C
°
S
I, S
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V , DIODE FORWARD VOL TAGE (V)
SD
Fig. 13 Source Current vs. Diode Forwar d Voltage
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
K
K
1
J
A
M
C
B
F
D
G
BSN20
Document number: DS31898 Rev. 8 - 2
All 7
°
GAUGE PLANE
0.2
5
Dim Min Max Typ
SOT23
A 0.37 0.51 0.40
B 1.20 1.40 1.30
a
C 2.30 2.50 2.40
D 0.89 1.03 0.915
L
L
1
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
8°
All Dimensions in mm
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September 2013
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Page 6
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
NEW PRODUCT
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
Y
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
E
2.0
1.35
BSN20
BSN20
Document number: DS31898 Rev. 8 - 2
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