Datasheet BSN20 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BSN20

N-channel enhancement mode
vertical D-MOS transistor

Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b

1997 Jun 18

Philips Semiconductors Product specification

N-channel enhancement mode
vertical D-MOS transistor

FEATURES

• Direct interface to C-MOS, TTL, etc.

• High-speed switching

• No secondary breakdown.

APPLICATIONS

• Thin and thick film circuits

• General purpose fast switching applications.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor
in a SOT23 SMD package.

CAUTION

The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.

PINNING - SOT23

PIN SYMBOL DESCRIPTION

1 g gate
2 s source
3 d drain

handbook, halfpage

Top view

Marking code: M8p.

3

g

21

MAM273

Fig.1 Simplified outline and symbol.

BSN20

d

s

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V
I
R
V

D

DS

DSon
GSth

drain-source voltage (DC) 50 V
drain current (DC) 100 mA
drain-source on-state resistance ID= 100 mA; VGS=10V 15 Ω
gate-source threshold voltage ID= 1 mA; VGS=V

DS

1.8 V

1997 Jun 18 2

Philips Semiconductors Product specification

N-channel enhancement mode

BSN20

vertical D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GSO

I

D

I

DM

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

drain-source voltage (DC) − 50 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) − 100 mA
peak drain current − 300 mA
total power dissipation up to T

up to T

=25°C; note 1 − 300 mW

amb

=25°C; note 2 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

thermal resistance from junction to ambient note 1 430 K/W

note 2 500 K/W

Notes to the Limiting values and Thermal characteristics

1. Device mounted on a ceramic substrate, 10 × 8 × 0.7 mm.

2. Device mounted on a printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

GSS

R

DSon

y

 forward transfer admittance VDS= 10 V; ID= 100 mA 40 80 − mS

fs

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS= 0; ID=10µA50−−V
gate-source threshold voltage VDS=VGS; ID= 1 mA 0.4 − 1.8 V
drain-source leakage current VGS= 0; VDS=40V −−1µA
gate-source leakage current VDS= 0; VGS= ±20 V −−±100 nA
drain-source on-state resistance VGS= 10 V; ID= 100 mA − 815Ω

=5V; ID= 100 mA − 14 20 Ω

V

GS

= 2.5 V; ID=10mA − 18 30 Ω

V

GS

input capacitance VGS= 0; VDS=10V; f=1MHz − 815pF
output capacitance VGS= 0; VDS=10V; f=1MHz − 715pF
reverse transfer capacitance VGS= 0; VDS=10V; f=1MHz − 25pF

Switching times

t

on

turn-on time VGS= 0 to 10 V; VDD=20V;

− 25ns

ID= 100 mA

t

off

turn-off time VGS=10to0V; VDD=20V;

− 510ns

ID= 100 mA

1997 Jun 18 3

Philips Semiconductors Product specification

N-channel enhancement mode
vertical D-MOS transistor

0.4

handbook, halfpage

P

tot

(W)

0.2

0

0 50 100 200

(1) Mounted on a ceramic substrate.
(2) Mounted on a printed-circuit board.

(1)

(2)

150

T

amb

Fig.2 Power derating curves.

MBB755

o

C)

(

BSN20

30

handbook, halfpage

C

(pF)

20

10

0

0 5 10 15 20 25

VGS= 0; Tj=25°C; f = 1 MHz.
(1) Cis.
(2) Cos.
(3) Crs.

Fig.3 Capacitance as a function of drain source

voltage; typical values.

MRA781

(1)
(2)

(3)

VDS (V)

handbook, halfpage

500

I

D

(mA)

400

300

200

100

0

04812

Tj=25°C.

GS

MRA782

= 10 VV

7 V

5 V

4 V

3 V

2.5 V

VDS (V)

Fig.4 Typical output characteristics.

1997 Jun 18 4

handbook, halfpage

500

I

D

(mA)

400

300

200

100

0

0246810

VDS= 10 V; Tj=25°C.

Fig.5 Typical transfer characteristics.

MRA783

VGS (V)

Philips Semiconductors Product specification

N-channel enhancement mode
vertical D-MOS transistor

24

handbook, halfpage

R

DSon

(Ω)

16

8

0

1

Tj=25°C.
(1) VGS= 2.5 V.
(2) VGS=5V.
(3) VGS=10V.

Fig.6 Drain-source on-state resistance as a

function of drain current; typical values.

(1)

(2)

(3)

2

10

10

ID (mA)

MDA163

BSN20

80

handbook, halfpage

R

DSon

(Ω)

60

40

20

3

10

0

02 10

VDS= 0.1 V; Tj=25°C.

4

68

Fig.7 Drain-source on-state resistance as a

function of gate-source voltage; typical
values.

MDA162

VGS (V)

1.2

handbook, halfpage

k

1.1

1

0.9

0.8

0.7

k

=

-------------------------------------­V

Typical V

V

GSth

GSth

GSth

at T

at 25°C

at 1 mA.

0 50 100 150−50

j

Tj (

Fig.8 Temperature coefficient of gate-source

threshold voltage.

MRA785

o

C)

handbook, halfpage

2

k

1.6

1.2

0.8

0.4

R

DSon

k

=

----------------------------------------­R

DSon

(1) ID= 10 mA; VGS= 2.5 V.
(2) ID= 100 mA; VGS=10V.

at T

at 25 °C

0 50 100 150−50

j

MRA784

(2)

(1)

Tj (oC)

Fig.9 Temperature coefficient of drain-source

on-state resistance.

1997 Jun 18 5

Philips Semiconductors Product specification

N-channel enhancement mode

BSN20

vertical D-MOS transistor

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

E

H

E

AB

X

v M

A

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

mm

A

1.1

0.9

OUTLINE
VERSION

SOT23

max.

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

b

p

e

cD

3.0

2.8

w M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

e

E

1.4

1.9

1.2

REFERENCES

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

1997 Jun 18 6

Philips Semiconductors Product specification

N-channel enhancement mode

BSN20

vertical D-MOS transistor

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jun 18 7

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Printed in The Netherlands 137107/00/02/pp8 Date of release: 1997 Jun 18 Document order number: 9397 750 02308