Datasheet BSM75GD120DN2 Datasheet (Siemens)

IGBT Power Module

Preliminary data

• Solderable Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

BSM 75 GD 120 DN2

Type

V

CE

I

C

Package Ordering Code

BSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage

R

GE

= 20 k

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 80 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 80 °C

C

t

Power dissipation per IGBT

T

= 25 °C

C

Chip temperature Storage temperature

= 1 ms

p

Symbol Values Unit

V V

CE CGR

1200 V

1200

V I

GE

C

± 20

A

103

75

I

Cpuls

206 150

P

tot

W

520

T

j

T

stg

+ 150 °C

-55 ... + 150

≤

Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

R R V

thJC thJC is

D

0.235

≤

0.55

K/W

2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group

1 Mar-27-1996

BSM 75 GD 120 DN2

Electrical Characteristics

= 25 °C, unless otherwise specified

, at T

j

Parameter

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE, IC

= 2 mA

Collector-emitter saturation voltage

V V

GE GE

= 15 V, = 15 V,

= 75 A,

I

C

= 75 A,

I

C

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1200 V,

V

CE

= 1200 V,

V

CE

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Gate-emitter leakage current

V

GE

= 20 V,

V

CE

= 0 V

Symbol Values Unit

min. typ. max.

V

GE(th)

V

CE(sat)

I

CES

I

GES

-

2.5

3.1

1 4

3

3.7

1.5

-

V

mA

nA

- - 320

AC Characteristics

Transconductance

V

CE

= 20 V,

= 75 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

g

C

fs

iss

oss

rss

S

31 - -

nF

- 5.1 -

- 0.72 -

- 0.38 -

Semiconductor Group

2 Mar-27-1996

BSM 75 GD 120 DN2

Electrical Characteristics Parameter

= 25 °C, unless otherwise specified

, at T

j

Symbol Values Unit

Switching Characteristics, Inductive Load at

Turn-on delay time

= 600 V,

V R

CC Gon

= 15

Ω

V

GE

Rise time

= 600 V,

V R

CC Gon

= 15

Ω

V

GE

Turn-off delay time

= 600 V,

V R

CC Goff

= 15

Ω

V

GE

Fall time

= 600 V,

V R

CC Goff

= 15

Ω

V

GE

= 15 V,

= -15 V,

= 75 A

I

C

= 75 A

I

C

= 75 A

I

C

= 75 A

I

C

t

d(on)

t

r

t

d(off)

t

f

min. typ. max.

T

= 125 °C

j

- 30 60

- 70 140

- 450 600

- 70 100

ns

Free-Wheel Diode

Diode forward voltage

= 75 A,

I

F

= 75 A,

I

F

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Reverse recovery time

= 75 A,

I

F

iF/dt = -900 A/µs,

d

= -600 V,

V

R

V

= 125 °C

T

j

Reverse recovery charge

= 75 A,

I

F

iF/dt = -800 A/µs,

d

iF/dt = -800 A/µs,

d

iF/dt = -900 A/µs,

d

= -600 V,

V

R

V

= 25 °C

T

j

= 125 °C

T

j

= 25 °C

T

j

GE

= 0 V

V

t

Q

F

-

rr

2.3

1.8

2.8

-

V

µs

- 0.125 -

rr

-

3.2 10

-

µC

Semiconductor Group

3 Mar-27-1996

BSM 75 GD 120 DN2

Power dissipation

P

tot

parameter:

P

tot

T

= ƒ(

)

C

≤

T

150 °C

j

550

W

450

400

350

300

250

200

150

100

50

0

0 20 40 60 80 100 120 °C 160

Safe operating area

I

parameter:

T

C

= ƒ(

C

I

C

10

V

)

CE

2

T

j

≤

150 °C

t

= 14.0µs

p

DC

10

100 µs

1 ms

10 ms

3

V

CE

A

D

, T

= 0

3

2

1

0

-1 0

10

= 25°C ,

C

1

10

Collector current

I

parameter:

C

I

C

= ƒ(

T

)

C

≥

V

GE

120

A

100

90 80 70 60 50 40 30 20 10

0

0 20 40 60 80 100 120 °C 160

15 V ,

T

j

≤

150 °C

Transient thermal impedance IGBT

Z

th JC

parameter:

Z

thJC

T

C

= ƒ(

10

K/W

10

t

)

p

D = t

0

-1

-2

-3

-4

-5

10

T

/

p

single pulse

-4

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

10

-1

t

p

0

10

s

Semiconductor Group

4 Mar-27-1996

BSM 75 GD 120 DN2

Typ. output characteristics

IC = f (VCE)

parameter:

150

A

120

I

C

110 100

90 80 70 60 50 40 30 20 10

0

= 80 µs,

t

p

17V 15V 13V 11V 9V 7V

0 1 2 3 V 5

= 25 °C

T

j

Typ. output characteristics

IC = f (VCE)

parameter:

150

A

120

I

C

110 100

90 80 70 60 50 40 30 20 10

0

V

CE

= 80 µs,

t

p

17V 15V 13V 11V 9V 7V

0 1 2 3 V 5

= 125 °C

T

j

V

CE

Typ. transfer characteristics

IC = f (VGE)

parameter:

150

A

120

I

C

110 100

90 80 70 60 50 40 30 20 10

0

= 80 µs,

t

p

0 2 4 6 8 10 V 14

V

CE

= 20 V

V

GE

Semiconductor Group

5 Mar-27-1996

BSM 75 GD 120 DN2

Typ. gate charge

V

GE

parameter:

V

GE

Q

= ƒ(

20

V

16

14

12

10

8

6

4

2 0

)

Gate

I

= 75 A

C puls

0 100 200 300 400 nC 550

Typ. capacitances

C = f (V

parameter:

C

800 V600 V

10

Q

Gate

)

CE

V

= 0 V, f = 1 MHz

GE

2

10

nF

1

10

0

10

-1

0 5 10 15 20 25 30 V 40

V

Ciss

Coss

Crss

CE

Reverse biased safe operating area

I

= f(VCE)

Cpuls

parameter:

2.5

I

/

Cpuls

C

1.5

1.0

0.5

0.0 0 200 400 600 800 1000 1200 V 1600

,

V

GE

Tj = 150°C

= 15 V

Short circuit safe operating area

I

= f(VCE) ,

Csc

parameter:

12

I

/

Csc

C

8

6

4

2

0

V

CE

Tj = 150°C

V

= ± 15 V,

GE

0 200 400 600 800 1000 1200 V 1600

t

≤ 10 µs, L < 50 nH

SC

V

CE

Semiconductor Group

6 Mar-27-1996

BSM 75 GD 120 DN2

Typ. switching time

I = f (IC) ,

par.:

t

inductive load , Tj = 125°C = 600 V,

V

CE

4

10

ns

3

10

2

10

1

10

0 20 40 60 80 100 120 140 A 180

= ± 15 V,

V

GE

R

= 15

G

tdoff

tr

tf tdon

I

C

Ω

Typ. switching time

t = f (RG) ,

par.:

t

inductive load , Tj = 125°C

= 600V,

V

CE

4

10

ns

3

10

2

10

1

10

0 10 20 30 40 50 60

I

C

= 75 A

tdoff

tr tdon

tf

Ω

R

80

G

Typ. switching losses

E = f (IC) ,

par.:

mWs

E

inductive load , Tj = 125°C

= 600 V,

V

CE

40

30

25

20

15

10

5

0

0 20 40 60 80 100 120 140 A 180

V

GE

= ± 15 V,

R

= 15

G

Eon

Eoff

I

C

Ω

Typ. switching losses

E = f (RG) ,

par.:

mWs

E

inductive load

= 600V,

V

CE

40

30

25

20

15

10

5

0

0 10 20 30 40 50 60

V

GE

Tj = 125°C

,

= ± 15 V,

= 75 A

I

C

Eon

Eoff

Ω

R

80

G

Semiconductor Group

7 Mar-27-1996

BSM 75 GD 120 DN2

Forward characteristics of fast recovery reverse diode

parameter:

150

A

120

I

F

110 100

90 80 70 60 50 40 30 20 10

0

0.0 0.5 1.0 1.5 2.0 V 3.0

IF = f(VF)

T

j

T

j

=25°C=125°C

T

j

V

Transient thermal impedance Diode

= ƒ(

Z

th JC

parameter:

10

K/W

Z

thJC

10

F

)

t

p

/

D = t

0

-1

-2

-3

-4

-5

10

T

p

single pulse

-4

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

10

-1

t

p

0

10

s

Semiconductor Group

8 Mar-27-1996

Circuit Diagram

BSM 75 GD 120 DN2

Package Outlines

Dimensions in mm Weight: 300 g

Semiconductor Group

9 Mar-27-1996