Page 1
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM 50 GB 120 DN2
Type
V
CE
I
C
Package Ordering Code
BSM 50 GB 120 DN2 1200V 78A HALF-BRIDGE 1 C67076-A2105-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1200 V
1200
V
I
GE
C
± 20
A
78
50
I
Cpuls
156
100
P
tot
W
400
T
j
T
stg
+ 150 °C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
thJC
R
thJCD
V
is
≤
≤
0.3
0.6
K/W
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Mar-29-1996
Page 2
BSM 50 GB 120 DN2
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 2 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 50 A,
I
C
= 50 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1200 V,
V
CE
= 1200 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.5
3.1
0.8
3.5
3
3.7
mA
1
nA
- - 200
AC Characteristics
Transconductance
V
CE
= 20 V,
= 50 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
23 - -
nF
- 3.3 -
- 0.5 -
- 0.25 -
Semiconductor Group
2 Mar-29-1996
Page 3
BSM 50 GB 120 DN2
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 600 V,
V
R
CC
Gon
= 22
Ω
V
GE
Rise time
= 600 V,
V
R
CC
Gon
= 22
Ω
V
GE
Turn-off delay time
= 600 V,
V
R
CC
Goff
= 22
Ω
V
GE
Fall time
= 600 V,
V
R
CC
Goff
= 22
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 50 A
I
C
= 50 A
I
C
= 50 A
I
C
= 50 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 44 100
- 56 100
- 380 500
- 70 100
ns
Free-Wheel Diode
Diode forward voltage
= 50 A,
I
F
= 50 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Reverse recovery time
= 50 A,
I
F
iF/dt = -800 A/µs,
d
= -600 V,
V
R
V
= 125 °C
T
j
Reverse recovery charge
= 50 A,
I
F
= -600 V, diF/dt = -800 A/µs,
V
R
- 600 V, diF/dt - 800 A/µs,
V
R
V
GE
= 0 V
GE
= 0 V
T
= 125 °C
T
j
= 25 °C
j
V
t
Q
F
-
-
rr
2.3
1.8
2.8
-
V
µs
- 0.2 -
rr
-
-
2.8
8
-
-
µC
Semiconductor Group
3 Mar-29-1996
Page 4
BSM 50 GB 120 DN2
Power dissipation
P
tot
parameter:
P
tot
T
= ƒ(
)
C
≤
T
150 °C
j
450
W
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 °C 160
Safe operating area
I
parameter:
T
C
= ƒ(
C
I
C
10
10
10
10
10
V
)
CE
2
T
j
≤
150 °C
t
= 14.0µs
p
DC
10
100 µs
1 ms
10 ms
3
V
V
CE
A
D
, T
= 0
3
2
1
0
-1
0
10
= 25°C ,
C
1
10
10
Collector current
I
parameter:
C
I
C
= ƒ(
T
)
C
≥
V
GE
90
A
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
15 V ,
T
j
≤
150 °C
Transient thermal impedance IGBT
Z
th JC
parameter:
Z
thJC
T
C
= ƒ(
10
K/W
10
10
10
10
t
)
p
D = t
0
-1
-2
-3
-4
-5
10
T
/
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
t
p
0
10
s
Semiconductor Group
4 Mar-29-1996
Page 5
BSM 50 GB 120 DN2
Typ. output characteristics
IC = f (VCE)
parameter:
100
A
80
I
C
70
60
50
40
30
20
10
0
= 80 µs,
t
p
17V
15V
13V
11V
9V
7V
0 1 2 3 V 5
= 25 °C
T
j
Typ. output characteristics
IC = f (VCE)
parameter:
100
A
80
I
C
70
60
50
40
30
20
10
0
V
CE
= 80 µs,
t
p
17V
15V
13V
11V
9V
7V
0 1 2 3 V 5
= 125 °C
T
j
V
CE
Typ. transfer characteristics
IC = f (VGE)
parameter:
100
A
80
I
C
70
60
50
40
30
20
10
0
= 80 µs,
t
p
0 2 4 6 8 10 V 14
V
CE
= 20 V
V
GE
Semiconductor Group
5 Mar-29-1996
Page 6
BSM 50 GB 120 DN2
Typ. gate charge
V
GE
parameter:
V
GE
Q
= ƒ(
20
V
16
14
12
10
8
6
4
2
0
)
Gate
I
= 50 A
C puls
0 40 80 120 160 200 240 280 nC 340
Q
800 V600 V
Gate
Typ. capacitances
C = f (V
parameter:
C
10
)
CE
V
= 0, f = 1 MHz
GE
2
10
nF
1
10
0
10
-1
0 5 10 15 20 25 30 V 40
V
Ciss
Coss
Crss
CE
Reverse biased safe operating area
I
= f(VCE)
Cpuls
parameter:
2.5
I
I
/
Cpuls
C
1.5
1.0
0.5
0.0
0 200 400 600 800 1000 1200 V 1600
V
GE
,
= 15 V
Tj = 150°C
Short circuit safe operating area
I
= f(VCE) ,
Csc
parameter:
12
I
I
/
Csc
C
8
6
4
2
0
V
CE
Tj = 150°C
V
= ± 15 V,
GE
0 200 400 600 800 1000 1200 V 1600
t
≤ 10 µs, L < 50 nH
SC
V
CE
Semiconductor Group
6 Mar-29-1996
Page 7
BSM 50 GB 120 DN2
Typ. switching time
I = f (IC) ,
par.:
t
inductive load , Tj = 125°C
= 600 V,
V
CE
3
10
ns
2
10
1
10
0 20 40 60 80 A 120
= ± 15 V,
V
GE
R
= 22
G
tdoff
tr
tf
tdon
I
C
Ω
Typ. switching time
t = f (RG) ,
par.:
t
inductive load , Tj = 125°C
= 600 V,
V
CE
4
10
ns
3
10
2
10
1
10
0 20 40 60 80
V
= ± 15 V,
GE
= 50 A
I
C
Ω
tdoff
tr
tdon
tf
R
G
120
Typ. switching losses
E = f (IC) ,
par.:
mWs
E
inductive load , Tj = 125°C
= 600 V,
V
CE
25
15
10
5
0
0 20 40 60 80 A 120
V
GE
= ± 15 V,
R
= 22
G
Eon
Eoff
I
C
Ω
Typ. switching losses
E = f (RG) ,
par.:
mWs
E
inductive load
= 600 V,
V
CE
25
15
10
5
0
0 20 40 60 80
V
GE
Tj = 125°C
,
= ± 15 V,
= 50 A
I
C
Ω
Eon
Eoff
R
G
120
Semiconductor Group
7 Mar-29-1996
Page 8
BSM 50 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
parameter:
100
A
80
I
F
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 V 3.0
IF = f(VF)
T
j
=125°C
T
j
T
=25°C
j
V
Transient thermal impedance Diode
= ƒ(
Z
th JC
parameter:
10
K/W
Z
thJC
10
10
10
10
F
)
t
p
/
D = t
0
-1
-2
-3
-4
-5
10
T
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
t
p
0
10
s
Semiconductor Group
8 Mar-29-1996
Page 9
Circuit Diagram
BSM 50 GB 120 DN2
Package Outlines
Dimensions in mm
Weight: 250 g
Semiconductor Group
9 Mar-29-1996
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