Page 1
IGBT Power Module
Preliminary data
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
BSM 35 GD 120 D2
Type
V
CE
I
C
Package Ordering Code
BSM 35 GD 120 D2 1200V 50A SIXPACK 1 C67076-A2506-A17
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1200 V
1200
V
I
GE
C
± 20
A
50
35
I
Cpuls
100
70
P
tot
W
280
T
j
T
stg
+ 150 °C
-55 ... + 150
≤
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
R
V
thJC
thJC
is
D
0.44
≤
0.8
K/W
2500 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Feb-10-1997
Page 2
BSM 35 GD 120 D2
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 1.2 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 35 A,
I
C
= 35 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1200 V,
V
CE
= 1200 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.7
3.3
0.6
2.4
3.2
3.9
mA
1
nA
- - 150
AC Characteristics
Transconductance
V
CE
= 20 V,
= 35 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
11 - -
nF
- 2 -
- 0.3 -
- 0.14 -
Semiconductor Group
2 Feb-10-1997
Page 3
BSM 35 GD 120 D2
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 600 V,
V
R
CC
Gon
= 39
Ω
V
GE
Rise time
= 600 V,
V
R
CC
Gon
= 39
Ω
V
GE
Turn-off delay time
= 600 V,
V
R
CC
Goff
= 39
Ω
V
GE
Fall time
= 600 V,
V
R
CC
Goff
= 39
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 35 A
I
C
= 35 A
I
C
= 35 A
I
C
= 35 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 60 120
- 60 120
- 400 600
- 50 75
ns
Free-Wheel Diode
Diode forward voltage
= 35 A,
I
F
= 35 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Reverse recovery time
= 35 A,
I
F
iF/dt = -800 A/µs,
d
= -600 V,
V
R
V
= 125 °C
T
j
Reverse recovery charge
= 35 A,
I
F
iF/dt = -800 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -600 V,
V
R
V
GE
GE
= 0 V
= 0 V
V
t
Q
F
-
-
rr
2.3
1.9
2.8
-
V
µs
- 0.25 -
rr
-
-
2
5
-
-
µC
Semiconductor Group
3 Feb-10-1997
Page 4
BSM 35 GD 120 D2
Power dissipation
P
tot
parameter:
P
tot
T
= ƒ(
)
C
≤
T
150 °C
j
300
W
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
Safe operating area
I
parameter:
T
C
= ƒ(
C
I
C
10
10
10
10
10
V
)
CE
2
T
j
≤
150 °C
t
= 18.0µs
p
DC
10
100 µs
1 ms
10 ms
3
V
V
CE
A
D
, T
= 0
3
2
1
0
-1
0
10
= 25°C ,
C
1
10
10
Collector current
I
parameter:
C
I
C
= ƒ(
T
)
C
≥
V
GE
55
A
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
15 V ,
T
j
≤
150 °C
Transient thermal impedance IGBT
Z
th JC
parameter:
Z
thJC
T
C
= ƒ(
10
K/W
10
10
10
10
t
)
p
D = t
0
-1
-2
-3
-4
-5
10
T
/
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
t
p
0
10
s
Semiconductor Group
4 Feb-10-1997
Page 5
BSM 35 GD 120 D2
Typ. output characteristics
IC = f (VCE)
parameter:
70
A
60
I
55
C
50
45
40
35
30
25
20
15
10
5
0
= 80 µs,
t
p
17V
15V
13V
11V
9V
7V
0 1 2 3 V 5
= 25 °C
T
j
Typ. output characteristics
IC = f (VCE)
parameter:
70
A
60
I
55
C
50
45
40
35
30
25
20
15
10
5
0
V
CE
= 80 µs,
t
p
17V
15V
13V
11V
9V
7V
0 1 2 3 V 5
= 125 °C
T
j
V
CE
Typ. transfer characteristics
IC = f (VGE)
parameter:
70
A
60
I
55
C
50
45
40
35
30
25
20
15
10
5
0
= 80 µs,
t
p
0 2 4 6 8 10 V 14
V
CE
= 20 V
V
GE
Semiconductor Group
5 Feb-10-1997
Page 6
BSM 35 GD 120 D2
Typ. gate charge
V
GE
parameter:
V
GE
Q
= ƒ(
20
V
16
14
12
10
8
6
4
2
0
)
Gate
I
= 35 A
C puls
0 40 80 120 160 nC 220
Typ. capacitances
C = f (V
parameter:
C
800 V600 V
10
10
Q
Gate
)
CE
V
= 0 V, f = 1 MHz
GE
1
10
nF
0
10
-1
-2
0 5 10 15 20 25 30 V 40
V
Ciss
Coss
Crss
CE
Reverse biased safe operating area
I
= f(VCE)
Cpuls
parameter:
2.5
I
I
/
Cpuls
C
1.5
1.0
0.5
0.0
0 200 400 600 800 1000 1200 V 1600
,
V
GE
Tj = 150°C
= 15 V
Short circuit safe operating area
I
= f(VCE) ,
Csc
parameter:
12
I
I
/
Csc
C
8
6
4
2
0
V
CE
Tj = 150°C
V
= ± 15 V,
GE
0 200 400 600 800 1000 1200 V 1600
t
≤ 10 µs, L < 50 nH
SC
V
CE
Semiconductor Group
6 Feb-10-1997
Page 7
BSM 35 GD 120 D2
Typ. switching time
I = f (IC) ,
par.:
t
inductive load , Tj = 125°C
= 600 V,
V
CE
3
10
ns
2
10
1
10
0 10 20 30 40 50 60 A 80
= ± 15 V,
V
GE
R
= 39
G
I
Ω
tdoff
tr
tdon
tf
C
Typ. switching time
t = f (RG) ,
par.:
t
inductive load , Tj = 125°C
= 600 V,
V
CE
3
10
ns
2
10
1
10
0 20 40 60 80 100 120 140
V
= ± 15 V,
GE
= 35 A
I
C
tdoff
tdon
tr
tf
Ω
R
G
180
Typ. switching losses
E = f (IC) ,
par.:
mWs
E
inductive load , Tj = 125°C
= 600 V,
V
CE
20
16
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60 A 80
V
GE
= ± 15 V,
R
= 39
G
Eon
Eoff
I
C
Ω
Typ. switching losses
E = f (RG) ,
par.:
mWs
E
inductive load
= 600V,
V
CE
20
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140
V
GE
Tj = 125°C
,
= ± 15 V,
= 35 A
I
C
Eon
Eoff
Ω
R
G
180
Semiconductor Group
7 Feb-10-1997
Page 8
BSM 35 GD 120 D2
Forward characteristics of fast recovery
reverse diode
parameter:
70
A
60
I
55
F
50
45
40
35
30
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 V 3.0
IF = f(VF)
T
j
=125°C
T
j
T
=25°C
j
V
Transient thermal impedance Diode
= ƒ(
Z
th JC
parameter:
10
K/W
Z
thJC
10
10
10
F
)
t
p
/
D = t
0
-1
-2
-3
-5
10
T
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
t
p
0
10
s
Semiconductor Group
8 Feb-10-1997
Page 9
Circuit Diagram
BSM 35 GD 120 D2
Package Outlines
Dimensions in mm
Weight: 180 g
Semiconductor Group
9 Feb-10-1997
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