Page 1
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
BSM300GA170DN2 E3166
• R
G on,min
Type
= 5.6 Ohm
V
CE
I
C
Package Ordering Code
BSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1700 V
1700
V
I
GE
C
± 20
A
440
300
I
Cpuls
880
600
P
tot
W
2500
T
j
T
stg
+ 150 °C
-55 ... + 150
≤
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
R
V
thJC
thJC
is
D
0.05
≤
0.1
K/W
4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Jul-31-1996
Page 2
BSM300GA170DN2 E3166
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 20 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 300 A,
I
C
= 300 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1700 V,
V
CE
= 1700 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.8 5.5 6.2
V
CE(sat)
I
CES
I
GES
-
-
-
-
3.4
4.6
2
8
3.9
5.3
mA
3
nA
- - 400
AC Characteristics
Transconductance
V
CE
= 20 V,
= 300 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
108 - -
nF
- 44 -
- 3.5 -
- 1 -
Semiconductor Group
2 Jul-31-1996
Page 3
BSM300GA170DN2 E3166
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 1200 V,
V
R
CC
Gon
= 5.6
Ω
V
GE
Rise time
= 1200 V,
V
R
CC
Gon
= 5.6
Ω
V
GE
Turn-off delay time
= 1200 V,
V
R
CC
Goff
= 5.6
Ω
V
GE
Fall time
= 1200 V,
V
R
CC
Goff
= 5.6
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 300 A
I
C
= 300 A
I
C
= 300 A
I
C
= 300 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 600 1200
- 200 400
- 1280 1900
- 110 160
ns
Free-Wheel Diode
Diode forward voltage
= 300 A,
I
F
= 300 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
T
T
Reverse recovery time
= 300 A,
I
F
iF/dt = -1500 A/µs,
d
= -1200 V,
V
R
= 125 °C
T
j
Reverse recovery charge
= 300 A,
I
F
iF/dt = -1500 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -1200 V,
V
R
= 25 °C
j
= 125 °C
j
= 0 V
V
GE
= 0 V
V
GE
V
t
Q
F
-
-
rr
2
1.8
2.5
-
V
µs
- 1-
rr
-
-
28
100
-
-
µC
Semiconductor Group
3 Jul-31-1996
Page 4
BSM300GA170DN2 E3166
Power dissipation
P
tot
parameter:
P
tot
T
= ƒ(
)
C
≤
T
150 °C
j
2600
W
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0 20 40 60 80 100 120 °C 160
Safe operating area
I
parameter:
T
C
= ƒ(
C
I
C
10
10
10
10
10
V
)
CE
2
T
j
≤
150 °C
t
p
DC
10
= 1.2µs
10 µs
100 µs
1 ms
10 ms
3
V
V
CE
A
4
3
2
1
0
10
D
, T
= 0
0
= 25°C ,
C
1
10
10
Collector current
I
parameter:
C
I
C
= ƒ(
T
)
C
≥
V
GE
450
A
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 °C 160
15 V ,
T
j
≤
150 °C
Transient thermal impedance IGBT
Z
th JC
parameter:
Z
thJC
T
C
= ƒ(
10
K/W
10
10
10
10
t
)
p
D = t
0
-1
-2
-3
-4
-5
10
T
/
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
t
p
0
10
s
Semiconductor Group
4 Jul-31-1996
Page 5
BSM300GA170DN2 E3166
Typ. output characteristics
IC = f (VCE)
parameter:
600
A
500
I
C
450
400
350
300
250
200
150
100
50
0
0.0 1.0 2.0 3.0 4.0 V 6.0
= 80 µs,
t
p
17V
15V
13V
11V
9V
7V
= 25 °C
T
j
Typ. output characteristics
IC = f (VCE)
parameter:
600
A
500
I
C
450
400
350
300
250
200
150
100
50
0
0.0 1.0 2.0 3.0 4.0 V 6.0
V
CE
= 80 µs,
t
p
17V
15V
13V
11V
9V
7V
= 125 °C
T
j
V
CE
Typ. transfer characteristics
IC = f (VGE)
parameter:
1200
A
1000
I
C
900
800
700
600
500
400
300
200
100
0
= 80 µs,
t
p
0 2 4 6 8 10 V 14
V
CE
= 20 V
V
GE
Semiconductor Group
5 Jul-31-1996
Page 6
BSM300GA170DN2 E3166
Typ. gate charge
V
GE
parameter:
V
GE
Q
= ƒ(
20
V
16
14
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 µC 4.5
Gate
I
C puls
)
= 300 A
Typ. capacitances
C = f (V
parameter:
C
1200 V800 V
10
Q
Gate
)
CE
V
= 0, f = 1 MHz
GE
2
10
nF
1
10
0
10
-1
0 5 10 15 20 25 30 V 40
V
Ciss
Coss
Crss
CE
Reverse biased safe operating area
I
= f(VCE)
Cpuls
parameter:
2.5
I
I
/
Cpuls
C
1.5
1.0
0.5
0.0
0 250 500 750 1000 1250 1500 V 2000
,
V
GE
Tj = 150°C
= 15 V
Short circuit safe operating area
I
= f(VCE) ,
Csc
parameter:
12
I
I
/
Csc
C
8
6
4
2
0
V
CE
Tj = 150°C
V
= ± 15 V,
GE
0 250 500 750 1000 1250 1500 V 2000
t
≤ 10 µs, L < 20 nH
SC
V
CE
Semiconductor Group
6 Jul-31-1996
Page 7
BSM300GA170DN2 E3166
Typ. switching time
I = f (IC) ,
par.:
t
inductive load , Tj = 125°C
= 1200 V,
V
CE
4
10
ns
3
10
2
10
1
10
0 100 200 300 400 500 A 700
= ± 15 V,
V
GE
R
G
= 5.6
tdoff
tdon
tr
tf
I
C
Ω
Typ. switching time
t = f (RG) ,
par.:
t
inductive load , Tj = 125°C
= 1200 V,
V
CE
4
10
ns
3
10
2
10
1
10
0 5 10 15 20
= ± 15 V,
V
GE
= 300 A
I
C
tdoff
tdon
tr
tf
Ω
30
R
G
Typ. switching losses
E = f (IC) ,
par.:
1000
mWs
E
inductive load , Tj = 125°C
= 1200 V,
V
CE
800
700
600
500
400
300
200
100
0
0 100 200 300 400 500 A 700
V
= ± 15 V,
GE
R
G
= 5.6
Eon
Eoff
I
C
Ω
Typ. switching losses
E = f (RG) ,
par.:
1000
mWs
800
E
700
600
500
400
300
200
100
inductive load
= 1200 V,
V
CE
0
0 5 10 15 20
V
Tj = 125°C
,
= ± 15 V,
GE
= 300 A
I
C
Eon
Eoff
Ω
30
R
G
Semiconductor Group
7 Jul-31-1996
Page 8
BSM300GA170DN2 E3166
Forward characteristics of fast recovery
reverse diode
parameter:
600
A
500
I
F
450
400
350
300
250
200
150
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5 V 3.5
IF = f(VF)
T
j
=125°C
T
j
T
=25°C
j
V
Transient thermal impedance Diode
= ƒ(
Z
th JC
parameter:
10
K/W
10
Z
thJC
10
10
10
10
F
)
t
p
/
D = t
0
-1
-2
-3
-4
-5
-5
10
T
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
t
p
0
10
s
Semiconductor Group
8 Jul-31-1996
Page 9
Circuit Diagram
BSM300GA170DN2 E3166
Package Outlines
Dimensions in mm
Weight: 420 g
Semiconductor Group
9 Jul-31-1996
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