Page 1
1 Oct-27-1997
BSM 150 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
G on,min
= 10 Ohm
Type
V
CE
I
C
Package Ordering Code
BSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67
Maximum Ratings
Parameter
Symbol Values Unit
Collector-emitter voltage V
CE
1700 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1700
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 80 °C
I
C
150
220
A
Pulsed collector current, tp = 1 ms
T
C
= 25 °C
T
C
= 80 °C
I
Cpuls
300
440
Power dissipation per IGBT
T
C
= 25 °C
P
tot
1250
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-40 ... + 125
Thermal resistance, chip case R
thJC
≤
0.1 K/W
Diode thermal resistance, chip case R
thJC
D
≤
0.32
Insulation test voltage, t = 1min. V
is
4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
Page 2
2 Oct-27-1997
BSM 150 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE, IC
= 10 mA
V
GE(th)
4.8 5.5 6.2
V
Collector-emitter saturation voltage
V
GE
= 15 V, IC = 150 A, Tj = 25 °C
V
GE
= 15 V, IC = 150 A, Tj = 125 °C
V
CE(sat)
-
-
4.6
3.4
5.3
3.9
Zero gate voltage collector current
V
CE
= 1700 V, VGE = 0 V, Tj = 25 °C
V
CE
= 1700 V, VGE = 0 V, Tj = 125 °C
I
CES
-
4
1
-
1.5
mA
Gate-emitter leakage current
V
GE
= 20 V, VCE = 0 V
I
GES
- - 100
nA
AC Characteristics
Transconductance
V
CE
= 20 V, IC = 150 A
g
fs
54 - -
S
Input capacitance
V
CE
= 25 V, VGE = 0 V, f = 1 MHz
C
iss
- 20 -
nF
Output capacitance
V
CE
= 25 V, VGE = 0 V, f = 1 MHz
C
oss
- 2 -
Reverse transfer capacitance
V
CE
= 25 V, VGE = 0 V, f = 1 MHz
C
rss
- 0.55 -
Page 3
3 Oct-27-1997
BSM 150 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
V
CC
= 1200 V, VGE = 15 V, IC = 150 A
R
Gon
= 10
Ω
t
d(on)
- 520 1000
ns
Rise time
V
CC
= 1200 V, VGE = 15 V, IC = 150 A
R
Gon
= 10
Ω
t
r
- 200 400
Turn-off delay time
V
CC
= 1200 V, VGE = -15 V, IC = 150 A
R
Goff
= 10
Ω
t
d(off)
- 1200 1800
Fall time
V
CC
= 1200 V, VGE = -15 V, IC = 150 A
R
Goff
= 10
Ω
t
f
- 110 160
Free-Wheel Diode
Diode forward voltage
I
F
= 150 A, VGE = 0 V, Tj = 25 °C
I
F
= 150 A, VGE = 0 V, Tj = 125 °C
V
F
-
-
2.1
2.3
-
2.8
V
Reverse recovery time
I
F
= 150 A, VR = -1200 V, VGE = 0 V
di
F
/dt = -1200 A/µs, Tj = 125 °C
t
rr
- 0.6 -
µs
Reverse recovery charge
I
F
= 150 A, VR = -1200 V, VGE = 0 V
di
F
/dt = -1200 A/µs
T
j
= 25 °C
T
j
= 125 °C
Q
rr
-
36
11
-
-
µC
Page 4
9 Oct-27-1997
BSM 150 GB 170 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
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