Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
M3D088
BSH103
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1998 Jan 30
File under Discrete Semiconductors, SC13b
1998 Feb 11
Page 2
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
FEATURES
• Very low threshold
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL etc.
APPLICATIONS
• Power management
• DC to DC converters
• Battery powered applications
• ‘Glue-logic’; interface between logic blocks and/or
periphery
• General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
handbook, halfpage
Top view
3
21
MAM273
Fig.1 Simplified outline and symbol.
BSH103
d
g
s
QUICK REFERENCE DATA
SYMBOL PARAMETERS CONDITIONS MIN. MAX. UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC) − 30 V
source-drain diode forward voltage VGD= 0; IS= 0.5 A − 1V
gate-source voltage (DC) −±8V
gate-source threshold voltage VDS=VGS; ID= 1 mA 0.4 − V
drain current (DC) Ts=80°C − 0.85 A
drain-source on-state resistance VGS= 2.5 V; ID= 0.5 A − 0.5 Ω
total power dissipation Ts=80°C − 0.5 W
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11 2
Page 3
Philips Semiconductors Product specification
N-channel enhancement mode
BSH103
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Notes
1. T
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an R
4. Device mounted on printed-circuit board with an R
drain-source voltage (DC) − 30 V
gate-source voltage (DC) −±8V
drain current (DC) Ts=80°C; note 1 − 0.85 A
peak drain current note 2 − 3.4 A
total power dissipation Ts=80°C − 0.5 W
T
=25°C; note 3 − 0.75 W
amb
T
=25°C; note 4 − 0.54 W
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source current (DC) Ts=80°C − 0.5 A
peak pulsed source current note 2 − 2A
is the temperature at the soldering point of the drain lead.
(ambient to tie-point) of 27.5 K/W.
th a-tp
(ambient to tie-point) of 90 K/W.
th a-tp
0.6
handbook, halfpage
P
tot
(W)
0.4
0.2
0
0 40 80 160
120
Ts (°C)
Fig.2 Power derating curve.
MGM190
10
handbook, halfpage
IDS
(A)
1
1
−
10
P
2
−
10
3
−
10
1
−
10
δ =0.01; Ts=80°C.
(1) R
(2) Pulsed.
DSon
limitation.
MBK502
(2)
(1)
t
p
=
δ
T
t
p
T
t
110
DC
VDS (V)
2
10
Fig.3 SOAR.
1998 Feb 11 3
Page 4
Philips Semiconductors Product specification
N-channel enhancement mode
BSH103
MOS transistor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
handbook, full pagewidth
R
(K/W)
thermal resistance from junction to soldering point 140 K/W
3
10
th j-s
10
2
10
δ = 1
0.75
0.5
0.33
0.2
0.1
0.05
P
δ =
t
T
MBK503
p
0.02
tp (s)
t
1
0.01
1
−6
10
0
−5
10
−4
10
−3
10
−2
10
t
p
T
−1
10
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 11 4
Page 5
Philips Semiconductors Product specification
N-channel enhancement mode
BSH103
MOS transistor
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
Switching times
t
d(on)
t
f
t
on
t
d(off)
t
r
t
off
Source-drain diode
V
SD
t
rr
drain-source breakdown voltage VGS= 0; ID=10µA30−−V
gate-source threshold voltage VGS=VDS; ID= 1 mA 0.4 −−V
drain-source leakage current VGS= 0; VDS=24V −− 100 nA
gate leakage current VGS= ±8 V; VDS=0 −− ±100 nA
drain-source on-state resistance VGS= 4.5 V; ID= 0.5 A −− 0.4 Ω
V
= 2.5 V; ID= 0.5 A −− 0.5 Ω
GS
= 1.8 V; ID= 0.25 A −− 0.6 Ω
V
GS
input capacitance VGS= 0; VDS=24V; f=1MHz − 83 − pF
output capacitance VGS= 0; VDS=24V; f=1MHz − 27 − pF
reverse transfer capacitance VGS= 0; VDS=24V; f=1MHz − 14 − pF
total gate charge VGS= 4.5 V; VDD=15V;
ID= 0.5 A; T
amb
=25°C
gate-source charge VDD= 15 V; ID= 0.5 A;
T
=25°C
amb
gate-drain charge VDD= 15 V; ID= 0.5 A;
T
=25°C
amb
turn-on delay time VGS= 0 to 8 V; VDD=15V;
ID= 0.5 A; R
gen
=6Ω
fall time VGS= 0 to 8 V; VDD=15V;
ID= 0.5 A; R
gen
=6Ω
turn-on switching time VGS= 0 to 8 V; VDD=15V;
ID= 0.5 A; R
gen
=6Ω
turn-off delay time VGS= 8 to 0 V; VDD=15V;
ID= 0.5 A; R
gen
=6Ω
rise time VGS= 8 to 0 V; VDD=15V;
ID= 0.5 A; R
gen
=6Ω
turn-off switching time VGS= 8 to 0 V; VDD=15V;
source-drain diode forward
ID= 0.5 A; R
VGD= 0; IS= 0.5 A −− 1V
gen
=6Ω
− 2100 − pC
− 95 − pC
− 670 − pC
− 2.5 − ns
− 3.5 − ns
− 6 − ns
− 20 − ns
− 7 − ns
− 27 − ns
voltage
reverse recovery time IS= 0.5 A; di/dt = −100 A/µs − 25 − ns
1998 Feb 11 5
Page 6
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
andbook, full pagewidth
V
in
V
DD
R
L
V
out
Fig.5 Switching times test circuit with input and output waveforms.
MAM274
BSH103
90 %
V
in
10 %
0
90 %
V
out
0
t
d(on)
10 %
t
t
f
t
on
d(off)
t
r
t
off
1800
MBK507
1800
2000
QG (pC)
5
handbook, halfpage
V
GS
(V)
4
3
2
1
0
VDD= 15 V; ID= 0.5 A; T
(1) VDS.
(2) V
(1)
0
200
400
GS.
600
800
amb
1000
=25°C.
(2)
1000
1600
Fig.6 Gate-source and drain-source voltages as
functions of total gate charge; typical values.
2200
16
14
12
10
8
6
4
2
0
V
DS
(V)
handbook, halfpage
4
(1)(2) (3)(4)
I
D
(A)
3
2
1
0
0
T
=25°C; tp= 300 µs; δ =0.
amb
= 7.5 V.
(1) V
GS
(2) VGS= 5.5 V.
(3) VGS= 4.5 V.
(4) VGS= 3.5 V.
210
(5)
468
(5) VGS=3V.
(6) VGS= 2.5 V.
(7) VGS=2V.
(8) VGS= 1.5 V.
(9) VGS=1V.
MBK505
(6)
(7)
(8)
(9)
VDS (V)
Fig.7 Output characteristics; typical values.
1998 Feb 11 6
Page 7
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
(A)
4
I
D
3
2
1
0
0
12
V
(V)
GS
handbook, halfpage
MBK506
BSH103
300
handbook, halfpage
C
(pF)
200
100
0
3
0
10 20
MBK504
C
C
C
VDS (V)
iss
oss
rss
30
VDS= 10 V; T
=25°C; tp= 300 µs; δ =0.
amb
Fig.8 Transfer characteristic; typical values.
handbook, halfpage
2
I
S
(A)
1.6
1.2
0.8
0.4
0
0 0.4 1.2
VGD=0.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −65 °C.
(2) (3)(1)
0.8
VSD (V)
MBK508
VGS= 0 ; f = 1 MHz; T
amb
=25°C.
Fig.9 Capacitance as a function of drain-source
voltage; typical values.
10
handbook, halfpage
R
DSon
(Ω)
1
−1
10
T
=25°C; tp= 300 µs; δ =0.
amb
= 0.1 A.
(1) I
D
(2) ID= 0.22 A.
(3) ID= 0.45 A.
(4)(3)(2)(1)
(5)
(6)
(4) ID= 0.9 A.
(5) ID= 1.8 A.
(6) ID= 3.6 A.
MBK509
8
VGS (V)
106240
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
1998 Feb 11 7
Fig.11 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Page 8
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
1.2
handbook, halfpage
k
0.8
0.4
0
−65 185
V
=
-------------------------------------V
GSth
−15 35 85 135
GSth
at T
at 25°C
j
V
GSth
.k
Tj (°C)
at VDS=VGS; ID= 1 mA.
MBK510
1.6
handbook, halfpage
k
1.2
0.8
0.4
0
−65 185
R
DSon
=
----------------------------------------R
DSon
−15 35 85 135
at T
at 25 °C
(1) R
j
.k
(2) R
at VGS= 4.5 V; ID= 0.5 mA.
DSon
at VGS= 2.5 V; ID= 0.5 mA.
DSon
BSH103
MBK511
(1)
(2)
Tj (°C)
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
1998 Feb 11 8
Page 9
Philips Semiconductors Product specification
N-channel enhancement mode
BSH103
MOS transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
E
H
E
AB
X
v M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
max.
b
p
e
cD
3.0
2.8
w M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
E
1.4
1.9
1.2
REFERENCES
e
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1998 Feb 11 9
Page 10
Philips Semiconductors Product specification
N-channel enhancement mode
BSH103
MOS transistor
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 11 10
Page 11
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
BSH103
NOTES
1998 Feb 11 11
Page 12
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© Philips Electronics N.V. 1998 SCA57
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 135108/00/04/pp12 Date of release: 1998 Feb 11 Document order number: 9397 75003303
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