DATA SH EET
Product specification
File under Discrete Semiconductors, SC07
December 1997
DISCRETE SEMICONDUCTORS
BSD22
MOSFET N-channel depletion
switching transistor
December 1997 2
Philips Semiconductors Product specification
MOSFET N-channel depletion switching transistor BSD22
DESCRIPTION
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
n-channel depletion mode type.The
transistor is sealed in a SOT143
envelope and features a low
ON-resistance and low
capacitances.The transistor is
protected against excessive input
voltages by integrated back-to-back
diodes between gate and substrate.
Applications:
• analog and/or digital switch
• switch driver
• convertor
• chopper
PINNING
Note
1. Drain and source are
interchangeable
1 = substrate (b)
2 = source
3 = drain
4 = gate
Marking code: M32
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM389
Top view
g
d
b
s
21
34
QUICK REFERENCE DATA
Drain-source voltage V
DS
max. 20 V
Gate-source voltage V
GS
max.
+ 15 V
− 40 V
Drain current (DC) I
D
max. 50 mA
Total power dissipation up to T
amb
=25°CP
tot
max. 230 mW
Junction temperature T
j
max. 125 °C
Drain-source ON-resistance
V
GS
= 10 V; VSB= 0; ID= 1 mA R
DSon
max. 30 Ω
Feed-back capacitance
V
GS=VBS
= −5 V; VDS= 10 V; f = 1 MHz C
rss
typ. 0.6 pF
December 1997 3
Philips Semiconductors Product specification
MOSFET N-channel depletion switching transistor BSD22
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Device mounted on a ceramic subtrate of 8 mm × 10 mm × 0.7 mm.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified
Drain-source voltage V
DS
max. 20 V
Source-drain voltage V
SD
max. 20 V
Drain-substrate voltage V
DB
max. 25 V
Source-substrate voltage V
SB
max. 25 V
Gate-substrate voltage V
GB
max. ± 15 V
Gate-source voltage V
GS
max.
+ 15 V
− 40 V
Drain current (DC) I
D
max. 50 mA
Total power dissipation up to T
amb
=25°C
(1)
P
tot
max. 230 mW
Storage temperature range T
stg
−65 to + 150 °C
Junction temperature T
j
max. 125 °C
From junction to ambient in free air
(1)
R
th j-a
= 430 K/W
Drain-source breakdown voltage
V
GS=VBS
= −5 V; IS= 10 nA V
(BR)DSX
min. 20 V
Source-drain breakdown voltage
V
GD=VBD
= −5 V; ID= 10 nA V
(BR)SDX
min. 20 V
Drain-substrate breakdown voltage
VGB= 0; ID= 10 nA; open source V
(BR)DBO
min. 25 V
Source-substrate breakdown voltage
V
GB
= 0; IS= 10 nA; open drain V
(BR)SBO
min. 25 V
Drain-source leakage current
VGS=VBS= −5 V; VDS= 10 V I
DSoff
typ. 1.0 nA
Source-drain leakage current
V
GD=VBD
= 5 V; VSD= 10 V I
SDoff
typ. 1.0 nA
Gate-substrate leakage current
V
DB=VSB
= 0; VGB= ± 15 V I
GBS
max. 10 nA
Forward transconductance at f = 1 kHz
V
DS
= 10 V; VSB= 0; ID= 20 mA
g
fs
min. 10 mS
typ. 15 mS
Gate-source cut-off voltage
V
DS
= 10 V; VSB=0;
ID=10µA −V
(P)GS
max. 2.0 V
December 1997 4
Philips Semiconductors Product specification
MOSFET N-channel depletion switching transistor BSD22
Drain-source ON-resistance
I
D
= 1 mA; VSB=0;
typ.
max.
25
50
Ω
Ω
V
GS
=5 V R
DSon
typ.
max.
15
30
Ω
Ω
VGS= 10 V R
DSon
Capacitances at f = 1 MHz
V
GS=VBS
= −5 V; VDS= 10 V
Feed-back capacitance C
rss
typ. 0.6 pF
Input capacitance C
iss
typ. 1.5 pF
Output capacitance C
oss
typ. 1.0 pF
Switching times (see Fig.3)
VDD= 10 V; Vi= −5 V to + 5 V t
on
typ. 1.0 ns
t
off
typ. 5.0 ns
Fig.2 Capacitances model.
C
iss
=Cgs+ Cgd+ C
gb
C
oss
=Cgd+ C
bd
C
rss
=C
gd
handbook, halfpage
MBK301
C
gb
C
gd
C
bs
C
bd
d
b
s
C
gs
g
handbook, full pagewidth
MBK296
INPUT
OUTPUT
t
r
90%
10%
10%
90%
90%
10%
90%
10%
t
f
t
off
t
on
Fig.3 Switching times and input and output waveforms; Ri=50Ω; tr< 0.5 ns; tf< 1.0 ns; tp= 20 ns; δ < 0.01.
e
MBK300
630 Ω
50 Ω
0.1 µF
T.U.T
50 Ω
V
i
V
DD
V
o
December 1997 5
Philips Semiconductors Product specification
MOSFET N-channel depletion switching transistor BSD22
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
1.1
0.9
A
1
max
0.1
b
1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
H
E
ywvQ
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e
1
1.7
L
p
0.1 0.10.2
b
p
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B
97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
H
E
E
A
B
v M
A
X
A
A
1
L
p
Q
detail X
c
y
w M
e
1
e
B
21
34
b
1
b
p
December 1997 6
Philips Semiconductors Product specification
MOSFET N-channel depletion switching transistor BSD22
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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