Page 1
BSC150N03LD G
OptiMOS®3 Power-Transistors
Features
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters
1)
• Qualified according to JEDEC
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type Package Marking
BSC150N03LD G PG-TDSON-8 150N03LD
Maximum ratings, at T
=25 °C, unless otherwise specified
j
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
30 V
15
20 A
PG-TDSON-8
mΩ
Parameter Symbol Conditions Unit
Value
≤10 secs steady state
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
, T
VGS=10 V, TC=25 °C
V
=10 V, TC=100 °C
GS
=4.5 V, TC=25 °C
V
GS
=4.5 V,
V
GS
T
=100 °C
C
V
=10 V, TA=25 °C
GS
TC=25 °C
ID=20 A, R
TC=25 °C
=25 °C
3)
stg
T
A
GS
=25 Ω
3)
12.4 8
3.6 1.5
20
20
20
17
80
10
±20
26
-55 ... 150
55/150/56
A
mJ
V
W
°C
1)
J-STD20 and JESD22
Rev. 1.1 page 1 2008-05-29
Page 2
BSC150N03LD G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient, 6 cm² cooling area
Electrical characteristics, at T
3)
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
t≤10 s - - 35
steady state - - 85
- - 4.9 K/W
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=250 µA
VDS=30 V, VGS=0 V,
T
=25 °C
j
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
30 - - V
1 - 2.2
- 0.1 1 µA
- 10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
See figure 3
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
I
R
R
g
GSS
DS(on)
G
fs
VGS=20 V, VDS=0 V
VGS=4.5 V, ID=20 A
=10 V, ID=20 A
V
GS
|VDS|>2|ID|R
I
=20 A
D
DS(on)max
- 10 100 nA
- 17.6 22
- 12.5 15
- 1.2 1.8
,
18 35 - S
mΩ
Ω
Rev. 1.1 page 2 2008-05-29
Page 3
BSC150N03LD G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=15 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
4)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=20 A, R
I
D
V
DD
V
GS
G
=15 V, ID=20 A,
=0 to 4.5 V
=1.6 Ω
- 850 1100 pF
- 350 470
-16-
- 2.7 - ns
- 2.2 -
-12-
- 2.0 -
- 2.6 - nC
- 1.2 -
- 1.2 -
- 2.6 -
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
Q
g
plateau
g
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDD=15 V, ID=20 A,
V
=0 to 10 V
GS
VDS=0.1 V,
V
=0 to 4.5 V
GS
VDD=15 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=20 A,
T
=25 °C
j
VR=15 V, IF=IS,
di
/dt =400 A/µs
F
- 4.8 6.4
- 3.4 - V
- 10 13.2
- 4.2 - nC
-9-
- - 20 A
--80
- 0.93 1.1 V
- - 10 nC
Rev. 1.1 page 3 2008-05-29
Page 4
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC150N03LD G
30
25
25
20
20
15
[W]
15
tot
P
[A]
D
I
10
10
5
0
0 40 80 120 160
TC [°C]
5
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
p
3
=f(tp)
thJC
parameter: D =tp/T
10
limited by on-state
[A]
D
I
10
10
10
10
resistance
2
10 ms
DC
1
0
-1
10
-1
10
0
10
10 µs
100 µs
1 ms
1
1 µs
10
2
VDS [V]
0.5
0.2
1
0.1
0.05
[K/W]
0.02
thJC
Z
0.01
0.1
0.01
single pulse
0000001
10
-5
-6
10
10
-3
-4
10
10
-1
-2
10
tp [s]
10
0
Rev. 1.1 page 4 2008-05-29
Page 5
BSC150N03LD G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
80
10 V
5 V
40
70
4.5 V
60
50
[A]
D
I
40
4 V
30
20
10
3.5 V
3.2 V
3 V
2.8 V
0
0123
VDS [V]
3.2 V
3.5 V
30
]
Ω
[m
20
DS(on)
R
10
0
0102030
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
DS(on)max
gfs=f(ID); Tj=25 °C
4 V
4.5 V
5 V
10 V
80
70
60
50
40
[A]
D
I
30
20
10
150 °C
25 °C
0
012345
VGS [V]
40
35
30
25
[S]
20
fs
g
15
10
5
0
0102030
ID [A]
Rev. 1.1 page 5 2008-05-29
Page 6
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=20 A; VGS=10 V V
DS(on)
=f(Tj); VGS=VDS; ID=250 µA
GS(th)
BSC150N03LD G
25
20
]
Ω
[m
DS(on)
R
15
10
98 %
typ
5
0
-60 -20 20 60 100 140 180
Tj [°C]
2.5
2
1.5
[V]
GS(th)
V
1
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
parameter: T
4
10
j
100
150 °C, 98%
25 °C
3
10
Ciss
Coss
2
10
C [pF]
Crss
1
10
0
10
0102030
VDS [V]
10
[A]
F
I
150 °C
25 °C, 98%
1
0.0 0.5 1.0 1.5 2.0
VSD [V]
Rev. 1.1 page 6 2008-05-29
Page 7
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); R
parameter: T
=25 Ω
GS
j(start)
=f(Q
GS
parameter: V
); ID=20 A pulsed
gate
DD
BSC150N03LD G
100
10
[A]
AV
I
1
0.1
1 10 100 1000
100 °C
125 °C
25 °C
tAV [µs]
12
10
8
[V]
6
GS
V
4
2
0
024681012
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
gate
[nC]
6 V
15 V
24 V
35
V
GS
33
31
28
[V]
BR(DSS)
26
V
24
22
20
-60 -20 20 60 100 140 180
V
gs(th)
Q
g(th)
Q
gs
Q
g
Q
sw
Q
gd
Q
gate
Tj [°C]
Rev. 1.1 page 7 2008-05-29
Page 8
Package Outline and Footprint PG-TDSON-8 dual
BSC150N03LD G
Rev. 1.1 page 8 2008-05-29
Page 9
Tape PG-TDSON-8
BSC150N03LD G
Dimensions in mm
Rev. 1.1 page 9 2008-05-29
Page 10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
BSC150N03LD G
Rev. 1.1 page 10 2008-05-29
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