Datasheet BSC130P03LS G Datasheet (Infineon)

BSC130P03LS G

OptiMOSTM-P Power-Transistor

Product Summary

Features

• P-Channel

• Enhancement mode

• Logic level

• 150°C operating temperature

• Avalanche rated

• Vgs=25V, specially suited for notebook applications

Type Package Marking Lead free Packing

BSC130P03LS G PG-TDSON-8 130P03LS Yes Dry

Maximum ratings, at T

=25 °C, unless otherwise specified

j

V

DS

R

DS(on),max

I

D

-30 V

13

-22.5 A

PG-TDSON-8

mΩ

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

I

D

I

D,pulse

E

AS

V

GS

P

tot

T

j

, T

TC=25 °C

T

=70 °C

C

1)

=25 °C

T

A

TC=25 °C

2)

ID=-22.5 A, RGS=25 Ω

TC=25 °C

=25 °C

1)

stg

T

A

ESD class JESD22-C101-HBM

Soldering temperature

IEC climatic category; DIN IEC 68-1

Value

-22.5

-12

-90

148

±25

69

2.8

-55 ... 150

1C (1kV-2kV)

260 °C

55/150/56

A

mJ

V

W

°C

Rev. 1.3 page 1 2008-07-10

BSC130P03LS G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Electrical characteristics, at T

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

6 cm2 cooling area

- - 1.8 K/W

1)

--50

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSS

V

GS(th)

I

DSS

VGS=0 V, ID=-250µA

VDS=VGS, ID=-150 µA

VDS=-30 V, VGS=0 V, T

=25 °C

j

-30 - - V

-2.2 -1.5 -1

- -0.1 -1 µA

V

=-30 V, VGS=0 V,

DS

T

=125 °C

j

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

1)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

I

R

g

GSS

DS(on)

G

fs

VGS=-25 V, VDS=0 V

VGS=-10 V, I

=-22.5 A

D

|VDS|>2|ID|R

I

=-22.5 A

D

DS(on)max

- -10 -100

- -10 -100 nA

- 9.4 13.0

- 3.8 -

,

20 39 - S

mΩ

Ω

Rev. 1.3 page 2 2008-07-10

BSC130P03LS G

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

3)

C

t

Q

iss

oss

rss

d(on)

r

d(off)

f

gs

g(th)

gd

sw

=0 V, VDS=-15 V,

V

GS

f =1 MHz

VDD=-15 V, VGS=10 V, I R

V V

=22.5 A,

D

=6 Ω

G

=-24 V, ID=22.5 A,

DD

=0 to -10 V

GS

- 2760 3670 pF

- 857 1140

- 690 1000

- 11.4 17.1 ns

- 65.6 98.4

- 43.5 65.3

- 35.1 52.7

- -7.7 -10.3 nC

- -4.3 -5.7

- -20.5 -30.8

- -24.0 -35.4

Gate charge total

Gate plateau voltage

Output charge

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Q

V

plateau

Q

I

S

I

S,pulse

V

SD

t

rr

Q

g

oss

rr

VDD=-15 V, VGS=0 V

=25 °C

T

C

VGS=0 V, IF=-22.5 A, T

=25 °C

j

VR=15 V, IF=|IS|,

di

/dt =100 A/µs

F

- -54.9 -73.1

- -2.9 - V

- -14.8 -

- - 22.5 A

- - -90

- -0.9 -1.2 V

-33-ns

-24-nC

Rev. 1.3 page 3 2008-07-10

1 Power dissipation 2 Drain current

P

=f(TC); tp≤10 s ID=f(TC); |VGS|≥10 V; tp≤10 s

tot

BSC130P03LS G

80

24

70

20

60

[W]

tot

P

50

40

[A]

D

-I

16

12

30

8

20

10

0

0 40 80 120 160

TC [°C]

4

0

0 40 80 120 160

TC[°C]

3 Safe operating area 4 Max. transient thermal impedance

Z

I

=f(VDS); TC=25 °C1); D =0

D

parameter: t

10

p

2

100

10 µs

=f(tp)

thJS

parameter: D =tp/T

1

10

100 µs

0.01

0

1

10

1

10

[A]

10

D

-I

0

1

0.1 1 10 100

10

limited by on-state resistance

1 ms

10 ms

DC

-VDS [V]

0.2

[K/W]

0.1

thJS

Z

0.05

-1

0.1

10

0.02

single pulse

-2

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

10

-4

-5

10

-3

-2

10

tp [s]

10

-1

10

1

0

10

Rev. 1.3 page 4 2008-07-10

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

=f(ID); Tj=25 °C

DS(on)

parameter: V

GS

BSC130P03LS G

60

50

-10 V

-4.5 V

-3.5 V

50

40

-2.5 V

-2.7 V

-3 V

40

]

30

Ω

[A]

D

-I

30

-3.2 V

-3 V

[m

DS(on)

R

20

-2.7 V

10

-2.5 V

-2.3 V

0

0123

-VDS [V]

10

0

0 10203040

-ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

parameter: T

j

DS(on)max

gfs=f(ID); Tj=25 °C

-3.2 V

-3.5 V

-4.5 V

-10 V

60

25 °C

50

40

150 °C

30

[A]

D

-I

30

[S]

fs

g

20

10

0

01234

-VGS [V]

10

0

0102030

-ID [A]

Rev. 1.3 page 5 2008-07-10

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=-22.5 A; VGS=-10 V

DS(on)

=f(Tj); VGS=VDS; ID=-150 µA

V

GS(th)

BSC130P03LS G

16

14

98 %

12

]

Ω

[m

R

10

DS(on)

typ.

8

6

4

-60 -20 20 60 100 140 180

Tj [°C]

3

2.5

max.

2

[V]

GS(th)

1.5

typ.

-V

1

0.5

0

-60 -20 20 60 100 140 180

min.

Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V

); VGS=0 V; f =1 MHz IF=f(VSD)

DS

4

10000

10

parameter: T

100

j

25 °C, typ

150 °C, 98%

10

C [pF]

150 °C, typ

Ciss

3

1000

Coss

Crss

[A]

F

I

10

1

25 °C, 98%

2

100

10

0 8 16 24

-VDS [V]

0.1

0 0.5 1 1.5

-VSD [V]

Rev. 1.3 page 6 2008-07-10

13 Avalanche characteristics 14 Typ. gate charge

V

IAS=f(tAV); RGS=25 Ω

parameter: T

j(start)

=f(Q

GS

parameter: V

); ID=-22.5 A pulsed

gate

DD

BSC130P03LS G

100

[A]

10

AV

-I

1

1 10 100 1000

100 °C

125 °C

tAV [µs]

25 °C

10

9

8

7

6

[V]

5

GS

-V

4

3

2

1

0

0204060

-Q

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

=f(Tj); ID=-250 µA

BR(DSS)

-6 V

gate

[nC]

-15 V

-24 V

35

V

GS

34

33

32

31

[V]

BR(DSS)

30

-V

29

28

27

26

-60 -20 20 60 100 140 180

V

gs(th)

Q

g(th)

Q

gs

Q

g

Q

sw

Q

gd

Q

gate

Tj [°C]

Rev. 1.3 page 7 2008-07-10

Package Outline

PG-TDSON-8: Outline

BSC130P03LS G

Dimensions in mm

Rev. 1.3 page 8 2008-07-10

BSC130P03LS G

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev. 1.3 page 9 2008-07-10

Datasheet BSC130P03LS G Datasheet (Infineon) [ru]