Datasheet BSC082N10LS G Datasheet (Infineon)

BSC082N10LS G

OptiMOS®2 Power-Transistor

Features

• N-channel, logic level

• Excellent gate charge x R

• Very low on-resistance R

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

• Ideal for high-frequency switching and synchronous rectification

Type Package Marking

BSC082N10LS G PG-TDSON-8 082N10LS

product (FOM)

DS(on)

1)

for target application

Product Summary

V

DS

R

DS(on),max

I

D

100 V

8.2

100 A

PG-TDSON-8

mΩ

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

R

3)

I

D,pulse

E

AS

V

GS

P

tot

T

j

, T

TC=25 °C

ID=50 A, RGS=25 Ω

TC=25 °C

stg

=100 °C

C

=25 °C,

A

=45 K/W

thJA

Value

100 A

65

2)

13.8

400

377 mJ

±20 V

156 W

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

1)

J-STD20 and JESD22

Rev. 1.04 page 1 2008-07-07

BSC082N10LS G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

2)

- - 0.8 K/W

--45

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID=1 mA

VDS=VGS, ID=110 µA

VDS=100 V, VGS=0 V, T

=25 °C

j

V

=100 V, VGS=0 V,

DS

T

=125 °C

j

100 - - V

1.2 1.85 2.4

- 0.01 1 µA

- 10 100

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3)

see figure 3

I

GSS

R

DS(on)VGS

R

G

g

fs

VGS=20 V, VDS=0 V

=4.5 V, ID=50 A

=10 V, ID=100 A

V

GS

|VDS|>2|ID|R

I

=50 A

D

DS(on)max

- 1 100 nA

- 8.2 11

- 6.8 8.2

-1-

,

60 119 - S

mΩ

Ω

Rev. 1.04 page 2 2008-07-07

BSC082N10LS G

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Switching charge

Gate charge total

4)

C

t

Q

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

sw

g

=0 V, VDS=50 V,

V

GS

f =1 MHz

V

=50 V, VGS=10 V,

DD

=25 A, RG=2.7 Ω

I

D

=50 V, ID=25 A,

V

DD

V

=0 to 10 V

GS

- 5600 7400 pF

- 710 940

-3857

-1928ns

-2436

-5380

-1217

-1823nC

-1319

-2130

- 78 104

Gate plateau voltage

Output charge

V

Q

plateau

oss

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

4)

See figure 16 for gate charge parameter definition

I

S

I

S,pulse

V

SD

t

rr

Q

rr

VDD=50 V, VGS=0 V

=25 °C

T

C

VGS=0 V, IF=50 A, T

=25 °C

j

VR=50 V, IF=25 A,

di

/dt =100 A/µs

F

- 3.1 - V

-7397nC

- - 100 A

- - 400

- 0.9 1.2 V

- 107 - ns

- 226 - nC

Rev. 1.04 page 3 2008-07-07

1 Power dissipation 2 Drain current

P

=f(TC) ID=f(TC); VGS≥10 V

tot

BSC082N10LS G

160

120

100

120

80

[W]

80

tot

P

[A]

D

I

60

40

20

0

0 40 80 120 160

TC [°C]

0

0 40 80 120 160

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TC=25 °C; D =0 Z

D

parameter: t

10

p

3

1 µs

=f(tp)

thJC

parameter: D =tp/T

0

10

[A]

D

I

10

10 µs

2

1

0

-1

10

-1

10

0

100 µs

1 ms

DC

10

10 ms

1

10

2

10

[K/W]

thJC

Z

3

VDS [V]

10

0.5

0.2

0.1

-1

0.05

0.02

-2

-5

10

single pulse

10

0.01

10

-3

-4

10

-2

10

-1

10

0

tp [s]

Rev. 1.04 page 4 2008-07-07

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

=f(ID); Tj=25 °C

DS(on)

parameter: V

GS

BSC082N10LS G

280

240

200

10 V

7.5 V

6 V

4.5 V

160

[A]

D

I

120

4 V

80

3.5 V

40

3.2 V

0

012345

VDS [V]

20

3 V

3.5 V

15

]

Ω

[m

10

DS(on)

R

10 V

5

0

0 50 100 150

ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

parameter: T

j

DS(on)max

gfs=f(ID); Tj=25 °C

4 V

4.5 V

7.5 V

160

200

160

120

[A]

D

I

80

[S]

fs

g

80

40

0

0246

150 °C

VGS [V]

25 °C

40

0

0 20406080100

ID [A]

Rev. 1.04 page 5 2008-07-07

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=50 A; VGS=10 V V

DS(on)

=f(Tj); VGS=V

GS(th)

parameter: I

DS

D

BSC082N10LS G

20

3

2.5

15

]

Ω

[m

DS(on)

R

10

98 %

2

[V]

1.5

GS(th)

typ

V

1100 µA

110 µA

1

5

0.5

0

-60 -20 20 60 100 140 180

Tj [°C]

0

-60 -20 20 60 100 140 180

Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V

); VGS=0 V; f =1 MHz IF=f(VSD)

DS

parameter: T

4

10

Ciss

j

1000

Coss

3

10

C [pF]

Crss

2

10

1

10

0 20406080

VDS [V]

150 °C

[A]

F

I

100

10

1

0 0.5 1 1.5 2

25 °C

150 °C, 98%

25 °C, 98%

VSD [V]

Rev. 1.04 page 6 2008-07-07

13 Avalanche characteristics 14 Typ. gate charge

V

IAS=f(tAV); RGS=25 Ω

parameter: T

j(start)

=f(Q

GS

parameter: V

); ID=25 A pulsed

gate

DD

BSC082N10LS G

100

100 °C

[A]

10

AS

I

1

1 10 100 1000

125 °C

tAV [µs]

25 °C

10

8

6

[V]

GS

V

4

2

0

0 20406080

Q

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

=f(Tj); ID=1 mA

BR(DSS)

20 V

gate

80 V

50 V

[nC]

110

V

GS

Q

g

105

[V]

100

BR(DSS)

V

95

90

-60 -20 20 60 100 140 180

V

gs(th)

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Tj [°C]

Rev. 1.04 page 7 2008-07-07

Package Outline: PG-TDSON-8

BSC082N10LS G

Rev. 1.04 page 8 2008-07-07

BSC082N10LS G

Dimensions in mm

Rev. 1.04 page 9 2008-07-07

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

BSC082N10LS G

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

www.infineon.com).

Rev. 1.04 page 10 2008-07-07

Datasheet BSC082N10LS G Datasheet (Infineon) [ru]